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Hong Yin
State Key Lab of Superhard Materials College of Physics Jilin University Changchun 130012 P. R. China

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Research article
Published: 14 April 2021 in Advanced Optical Materials
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High quality hexagonal boron nitride (h‐BN) thick films are indispensable for practical deep‐ultraviolet (DUV) photodetector applications. However, the controllable synthesis of h‐BN films in terms of thickness and crystallinity often requires high growth temperatures, tedious chemical precursors and, catalytic transition metal substrates, that will eventually hinder their applicability. In this work, the direct growth of h‐BN films with thickness of 50–500 nm on silicon(100), sapphire, and quartz substrates by ion beam assisted deposition at a lower temperature (≈500 °C) without employing extra catalysis is reported. The as‐synthesized h‐BN thick films are stoichiometric, smooth, and continuous without obvious pinholes and cracks, consisting of nanocrystalline domains on the dielectric substrates, distinct from those grown on metallic substrates. More intriguingly, the DUV photodetector fabricated from a 500 nm thick h‐BN film on quartz substrate exhibits high peak responsivity (0.5 A W−1) with a ultrahigh on/off ratio of >103 at 204 nm, a high rejection ratio (R204nm/R250nm > 103), a large specific detectivity (6.92 × 109 Jones), and a sharp cutoff wavelength at 218 nm. The work herein demonstrates the great potential of this form of h‐BN thick films toward the development of DUV photodetectors.

ACS Style

Dongdong Li; Wei Gao; Xiaoyan Sun; Haiying Yu; Caiyun Liu; Hong Yin. Direct Growth of Hexagonal Boron Nitride Thick Films on Dielectric Substrates by Ion Beam Assisted Deposition for Deep‐UV Photodetectors. Advanced Optical Materials 2021, 9, 2100342 .

AMA Style

Dongdong Li, Wei Gao, Xiaoyan Sun, Haiying Yu, Caiyun Liu, Hong Yin. Direct Growth of Hexagonal Boron Nitride Thick Films on Dielectric Substrates by Ion Beam Assisted Deposition for Deep‐UV Photodetectors. Advanced Optical Materials. 2021; 9 (12):2100342.

Chicago/Turabian Style

Dongdong Li; Wei Gao; Xiaoyan Sun; Haiying Yu; Caiyun Liu; Hong Yin. 2021. "Direct Growth of Hexagonal Boron Nitride Thick Films on Dielectric Substrates by Ion Beam Assisted Deposition for Deep‐UV Photodetectors." Advanced Optical Materials 9, no. 12: 2100342.

Journal article
Published: 20 November 2020 in Nanotechnology
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The capability of hexagonal boron nitride (h-BN) to adsorb gas atoms may stimulate various promising applications in environment remediation and energy storage, while the interactivity with gas molecules yet remains challenging due to its inherent chemical inertness. In this article, we report a feasible and effective route for the scalable synthesis of vertically aligned h-BN nanowalls assisted by graphene without metallic catalysts. The average thickness of the fine h-BN nanowalls is few-atomic layers about 3.7 nm, that grow on the large substrate-like flakes transformed from the pristine graphene. The hierarchical h-BN nanowalls exhibit an enhanced gas adsorption performance, not only through physisorption owing to the synergistic combination of different porous geometries, but also through chemisorption via the open edge groups. Moreover, it demonstrates a significantly enhanced adsorption of CO2 over CH4 as compared to the h-BN nanosheets with similar sizes. Density functional theory calculations reveal that the -OH edge groups can effectively increase the adsorption capability towards CO2, accompanied by a shortened adsorption distance when the gas molecule is energetically stabilized. The wetting characteristics of h-BN nanowalls was further examined by contact angle goniometry.

ACS Style

Xiaoyan Sun; Dongdong Li; Wei Gao; Hong Yin. Graphene-facilitated synthesized vertically aligned hexagonal boron nitride nanowalls and their gas adsorption properties. Nanotechnology 2020, 32, 065601 .

AMA Style

Xiaoyan Sun, Dongdong Li, Wei Gao, Hong Yin. Graphene-facilitated synthesized vertically aligned hexagonal boron nitride nanowalls and their gas adsorption properties. Nanotechnology. 2020; 32 (6):065601.

Chicago/Turabian Style

Xiaoyan Sun; Dongdong Li; Wei Gao; Hong Yin. 2020. "Graphene-facilitated synthesized vertically aligned hexagonal boron nitride nanowalls and their gas adsorption properties." Nanotechnology 32, no. 6: 065601.

Journals
Published: 18 October 2019 in Nanoscale
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Sulfate modified BNNS based gas sensors exhibit superior sensing performances, offering a powerful platform for NO2 sensing and/or capturing applications.

ACS Style

Yue He; Dongdong Li; Wei Gao; Hong Yin; Fang Chen; Yanfeng Sun. High-performance NO2 sensors based on spontaneously functionalized hexagonal boron nitride nanosheets via chemical exfoliation. Nanoscale 2019, 11, 21909 -21916.

AMA Style

Yue He, Dongdong Li, Wei Gao, Hong Yin, Fang Chen, Yanfeng Sun. High-performance NO2 sensors based on spontaneously functionalized hexagonal boron nitride nanosheets via chemical exfoliation. Nanoscale. 2019; 11 (45):21909-21916.

Chicago/Turabian Style

Yue He; Dongdong Li; Wei Gao; Hong Yin; Fang Chen; Yanfeng Sun. 2019. "High-performance NO2 sensors based on spontaneously functionalized hexagonal boron nitride nanosheets via chemical exfoliation." Nanoscale 11, no. 45: 21909-21916.

Journal article
Published: 14 March 2019 in RSC Advances
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Clarifying the electronic states and structures of the c-BN/diamond interface is of extreme importance for bundling these two different wide-band gap materials in order to synthesize hybrid structures with new functional properties.

ACS Style

Dehe Zhao; Wei Gao; Yujing Li; Yuyuan Zhang; Hong Yin. The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface. RSC Advances 2019, 9, 8435 -8443.

AMA Style

Dehe Zhao, Wei Gao, Yujing Li, Yuyuan Zhang, Hong Yin. The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface. RSC Advances. 2019; 9 (15):8435-8443.

Chicago/Turabian Style

Dehe Zhao; Wei Gao; Yujing Li; Yuyuan Zhang; Hong Yin. 2019. "The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface." RSC Advances 9, no. 15: 8435-8443.

Journal article
Published: 12 March 2019 in Coatings
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Boron carbonitride (BCN) films containing hybridized bonds involving elements B, C, and N over wide compositional ranges enable an abundant variety of new materials, electronic structures, properties, and applications, owing to their semiconducting properties with variable band gaps. However, it still remains challenging to achieve band gap-engineered BCN ternary with a controllable composition and well-established ordered structure. Herein, we report on the synthesis and characterization of hybridized BCN materials, consisting of self-ordered hexagonal BN (h-BN) crystalline nanodomains, with its aligned basal planes preferentially perpendicular to the substrate, depending on the growth conditions. The observation of the two sets of different band absorptions suggests that the h-BN nanodomains are distinguished enough to resume their individual band gap identity from the BCN films, which decreases as the carbon content increases in the BCN matrix, due to the doping and/or boundary effect. Our results reveal that the structural features and band gap of this form of hybrid BCN films are strongly correlated with the kinetic growth factors, making it a great system for further fundamental physical research and for potential in the development of band gap-engineered applications in optoelectronics.

ACS Style

Yujing Li; Wei Gao; Fei Wang; Dehe Zhao; Yuyuan Zhang; Hong Yin. Self-Ordered Orientation of Crystalline Hexagonal Boron Nitride Nanodomains Embedded in Boron Carbonitride Films for Band Gap Engineering. Coatings 2019, 9, 185 .

AMA Style

Yujing Li, Wei Gao, Fei Wang, Dehe Zhao, Yuyuan Zhang, Hong Yin. Self-Ordered Orientation of Crystalline Hexagonal Boron Nitride Nanodomains Embedded in Boron Carbonitride Films for Band Gap Engineering. Coatings. 2019; 9 (3):185.

Chicago/Turabian Style

Yujing Li; Wei Gao; Fei Wang; Dehe Zhao; Yuyuan Zhang; Hong Yin. 2019. "Self-Ordered Orientation of Crystalline Hexagonal Boron Nitride Nanodomains Embedded in Boron Carbonitride Films for Band Gap Engineering." Coatings 9, no. 3: 185.

Journals
Published: 06 March 2019 in RSC Advances
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The synergistic effect of h-BN/c-BN/EP on the enhancement of thermal conductivity of polymeric composites has been demonstrated.

ACS Style

Yuyuan Zhang; Wei Gao; Yujing Li; Dehe Zhao; Hong Yin. Hybrid fillers of hexagonal and cubic boron nitride in epoxy composites for thermal management applications. RSC Advances 2019, 9, 7388 -7399.

AMA Style

Yuyuan Zhang, Wei Gao, Yujing Li, Dehe Zhao, Hong Yin. Hybrid fillers of hexagonal and cubic boron nitride in epoxy composites for thermal management applications. RSC Advances. 2019; 9 (13):7388-7399.

Chicago/Turabian Style

Yuyuan Zhang; Wei Gao; Yujing Li; Dehe Zhao; Hong Yin. 2019. "Hybrid fillers of hexagonal and cubic boron nitride in epoxy composites for thermal management applications." RSC Advances 9, no. 13: 7388-7399.

Journal article
Published: 24 February 2018 in Coatings
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Cubic boron nitride (c-BN) films were prepared via radio frequency (RF) magnetron sputtering from a hexagonal boron nitride (h-BN) target in a pure N2 plasma. The composition and microstructure morphology of the BN films with different deposition times under pure N2 plasma or mixed Ar/N2 plasma were investigated with respect to the nucleation and growth processes. The pure-phase c-BN growth window was obtained using pure N2 gas. The effects of pure N2 gas on the growth mechanism, structural morphology, and internal compressive stress of the as-synthesized c-BN films were studied. Using pure N2 gas instead of additional Ar resulted in improved microstructure quality and much reduced compressive stress, suggesting a fundamental strategy for achieving high-quality c-BN films.

ACS Style

Wei Gao; Yujing Li; Yuyuan Zhang; Hong Yin. Exploration of Growth Window for Phase-Pure Cubic Boron Nitride Films Prepared in a Pure N2 Plasma. Coatings 2018, 8, 82 .

AMA Style

Wei Gao, Yujing Li, Yuyuan Zhang, Hong Yin. Exploration of Growth Window for Phase-Pure Cubic Boron Nitride Films Prepared in a Pure N2 Plasma. Coatings. 2018; 8 (2):82.

Chicago/Turabian Style

Wei Gao; Yujing Li; Yuyuan Zhang; Hong Yin. 2018. "Exploration of Growth Window for Phase-Pure Cubic Boron Nitride Films Prepared in a Pure N2 Plasma." Coatings 8, no. 2: 82.

Journals
Published: 05 February 2018 in RSC Advances
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Hexagonal boron nitride (h-BN) is of great importance in imaging, thermal and quantum applications in the mid-infrared regions (most of which are size related) for its natural hyperbolic properties.

ACS Style

Wei Gao; Yan Zhao; Hong Yin. Lateral size selection of liquid exfoliated hexagonal boron nitride nanosheets. RSC Advances 2018, 8, 5976 -5983.

AMA Style

Wei Gao, Yan Zhao, Hong Yin. Lateral size selection of liquid exfoliated hexagonal boron nitride nanosheets. RSC Advances. 2018; 8 (11):5976-5983.

Chicago/Turabian Style

Wei Gao; Yan Zhao; Hong Yin. 2018. "Lateral size selection of liquid exfoliated hexagonal boron nitride nanosheets." RSC Advances 8, no. 11: 5976-5983.

Journals
Published: 09 August 2017 in Nanoscale
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We propose a simple and effective method for the fabrication of boron nitride nanosheets (BNNS)/Au NP array composite system, which allow us to develop both experimental and theoretical proofs to investigate SERS enhancement mechanism.

ACS Style

Wei Gao; Yan Zhao; Hong Yin; Hongdong Li. Self-assembly based plasmonic nanoparticle array coupling with hexagonal boron nitride nanosheets. Nanoscale 2017, 9, 13004 -13013.

AMA Style

Wei Gao, Yan Zhao, Hong Yin, Hongdong Li. Self-assembly based plasmonic nanoparticle array coupling with hexagonal boron nitride nanosheets. Nanoscale. 2017; 9 (35):13004-13013.

Chicago/Turabian Style

Wei Gao; Yan Zhao; Hong Yin; Hongdong Li. 2017. "Self-assembly based plasmonic nanoparticle array coupling with hexagonal boron nitride nanosheets." Nanoscale 9, no. 35: 13004-13013.

Journal article
Published: 23 September 2016 in Chinese Physics B
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The excellent physical and chemical properties of cubic boron nitride (c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon (100) substrates by radio frequency (RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-μm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed.

ACS Style

Yan Zhao; Wei Gao; Bo Xu; Ying-Ai Li; Hong-Dong Li; Guang-Rui Gu; Hong Yin. Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas. Chinese Physics B 2016, 25, 106801 .

AMA Style

Yan Zhao, Wei Gao, Bo Xu, Ying-Ai Li, Hong-Dong Li, Guang-Rui Gu, Hong Yin. Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas. Chinese Physics B. 2016; 25 (10):106801.

Chicago/Turabian Style

Yan Zhao; Wei Gao; Bo Xu; Ying-Ai Li; Hong-Dong Li; Guang-Rui Gu; Hong Yin. 2016. "Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas." Chinese Physics B 25, no. 10: 106801.

Journals
Published: 07 April 2015 in RSC Advances
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Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 420 °C, 600 °C and 900 °C.

ACS Style

Hao Yin; P. Ziemann. In situ Si doping of heteroepitaxially grown c-BN thin films at different temperatures. RSC Advances 2015, 5, 38170 -38175.

AMA Style

Hao Yin, P. Ziemann. In situ Si doping of heteroepitaxially grown c-BN thin films at different temperatures. RSC Advances. 2015; 5 (48):38170-38175.

Chicago/Turabian Style

Hao Yin; P. Ziemann. 2015. "In situ Si doping of heteroepitaxially grown c-BN thin films at different temperatures." RSC Advances 5, no. 48: 38170-38175.