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J. Pawluczyk
VIGO Systems SA (VIGO), 05-850 Ożarów Mazowiecki, Poland;(K.M.);(A.S.-G.);(A.T.);(J.P.);(M.Ż.);(J.K.)

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Concept paper
Published: 21 December 2018 in Sensors
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In this paper, we present WaterSpy, a project developing an innovative, compact, cost-effective photonic device for pervasive water quality sensing, operating in the mid-IR spectral range. The approach combines the use of advanced Quantum Cascade Lasers (QCLs) employing the Vernier effect, used as light source, with novel, fibre-coupled, fast and sensitive Higher Operation Temperature (HOT) photodetectors, used as sensors. These will be complemented by optimised laser driving and detector electronics, laser modulation and signal conditioning technologies. The paper presents the WaterSpy concept, the requirements elicited, the preliminary architecture design of the device, the use cases in which it will be validated, while highlighting the innovative technologies that contribute to the advancement of the current state of the art.

ACS Style

Nikolaos Doulamis; Athanasios Voulodimos; Anastasios Doulamis; Matthaios Bimpas; Aikaterini Angeli; Nikolaos Bakalos; Alessandro Giusti; Panayiotis Philimis; Antonio Varriale; Alessio Ausili; Sabato D’Auria; George Lampropoulos; Matthias Baer; Bernhard Schmauss; Stephan Freitag; Bernhard Lendl; Krzysztof Młynarczyk; Aleksandra Sosna-Głębska; Artur Trajnerowicz; Jarosław Pawluczyk; Mateusz Żbik; Jacek Kułakowski; Panagiotis Georgiadis; Stéphane Blaser; Nicola Bazzurro. WaterSpy: A High Sensitivity, Portable Photonic Device for Pervasive Water Quality Analysis. Sensors 2018, 19, 33 .

AMA Style

Nikolaos Doulamis, Athanasios Voulodimos, Anastasios Doulamis, Matthaios Bimpas, Aikaterini Angeli, Nikolaos Bakalos, Alessandro Giusti, Panayiotis Philimis, Antonio Varriale, Alessio Ausili, Sabato D’Auria, George Lampropoulos, Matthias Baer, Bernhard Schmauss, Stephan Freitag, Bernhard Lendl, Krzysztof Młynarczyk, Aleksandra Sosna-Głębska, Artur Trajnerowicz, Jarosław Pawluczyk, Mateusz Żbik, Jacek Kułakowski, Panagiotis Georgiadis, Stéphane Blaser, Nicola Bazzurro. WaterSpy: A High Sensitivity, Portable Photonic Device for Pervasive Water Quality Analysis. Sensors. 2018; 19 (1):33.

Chicago/Turabian Style

Nikolaos Doulamis; Athanasios Voulodimos; Anastasios Doulamis; Matthaios Bimpas; Aikaterini Angeli; Nikolaos Bakalos; Alessandro Giusti; Panayiotis Philimis; Antonio Varriale; Alessio Ausili; Sabato D’Auria; George Lampropoulos; Matthias Baer; Bernhard Schmauss; Stephan Freitag; Bernhard Lendl; Krzysztof Młynarczyk; Aleksandra Sosna-Głębska; Artur Trajnerowicz; Jarosław Pawluczyk; Mateusz Żbik; Jacek Kułakowski; Panagiotis Georgiadis; Stéphane Blaser; Nicola Bazzurro. 2018. "WaterSpy: A High Sensitivity, Portable Photonic Device for Pervasive Water Quality Analysis." Sensors 19, no. 1: 33.

Conference paper
Published: 22 December 2016 in Electron Technology Conference 2016
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In this paper, the results of the initial work on determining the photoelectric properties of graphene detector operating in a photoconductive mode are presented. Graphene is considered as a material for uncooled fast detectors. The investigation has been done by electrical and optical characterization. Two values of substrate resistivity have been used in the project – below 1 Ωcm and higher than 1.6 kΩcm. Measurements of detectors response to short, strong light pulses were conducted. Presented studies show that the use of high resistivity substrates is necessary to prevent capacitive shorting of the signal to the substrate, causing signal losses and increasing response time. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

ACS Style

Łukasz Ruta; Janusz Wozny; Zbigniew Lisik; Jacek Podgorski; Jozef Piotrowski; Jaroslaw Pawluczyk; Dawid Stepien; Klaudia Żerańska-Chudek. Graphene photoconductors fabricated on the substrates with different resistivity. Electron Technology Conference 2016 2016, 10175, 101751 .

AMA Style

Łukasz Ruta, Janusz Wozny, Zbigniew Lisik, Jacek Podgorski, Jozef Piotrowski, Jaroslaw Pawluczyk, Dawid Stepien, Klaudia Żerańska-Chudek. Graphene photoconductors fabricated on the substrates with different resistivity. Electron Technology Conference 2016. 2016; 10175 ():101751.

Chicago/Turabian Style

Łukasz Ruta; Janusz Wozny; Zbigniew Lisik; Jacek Podgorski; Jozef Piotrowski; Jaroslaw Pawluczyk; Dawid Stepien; Klaudia Żerańska-Chudek. 2016. "Graphene photoconductors fabricated on the substrates with different resistivity." Electron Technology Conference 2016 10175, no. : 101751.

Journal article
Published: 10 June 2015 in Journal of Electronic Materials
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We report on the time response of higher-operating-temperature (HOT, T ∼200 K to 300 K) fast long-cutoff-wavelength infrared (LWIR) HgCdTe photodetectors. For a long time, photoconductive and photoelectromagnetic devices operating near room temperature have been used as fast (sub-nanosecond) photodetectors. Unfortunately, such devices suffer from relatively low detectivity. Recent efforts have focused on heterojunction photodiodes that offer both fast response and high performance. This paper presents computer simulations and experimental studies that reveal mechanisms limiting the time response and design rules to achieve short response time of HOT LWIR photodiodes operating at both zero and reverse bias. Complex time response curves with fast and slow components have been observed. The latter has been found to be mainly determined by the ambipolar diffusion of photogenerated charge carriers and by the diffusion capacitance combined with the built-in or external series resistance. The limitations are especially pronounced in zero-biased photodiodes characterized by large diffusion capacitance, where series resistance of only 1 Ω significantly reduces the response speed of devices with 100 μm × 100 μm photosensitive area.

ACS Style

J. Pawluczyk; J. Piotrowski; W. Pusz; A. Koźniewski; Z. Orman; W. Gawron. Complex Behavior of Time Response of HgCdTe HOT Photodetectors. Journal of Electronic Materials 2015, 44, 3163 -3173.

AMA Style

J. Pawluczyk, J. Piotrowski, W. Pusz, A. Koźniewski, Z. Orman, W. Gawron. Complex Behavior of Time Response of HgCdTe HOT Photodetectors. Journal of Electronic Materials. 2015; 44 (9):3163-3173.

Chicago/Turabian Style

J. Pawluczyk; J. Piotrowski; W. Pusz; A. Koźniewski; Z. Orman; W. Gawron. 2015. "Complex Behavior of Time Response of HgCdTe HOT Photodetectors." Journal of Electronic Materials 44, no. 9: 3163-3173.

Conference paper
Published: 17 April 2001 in International Conference on Solid State Crystals 2000
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The paper reports on the design and fabrication of LPE-grown (formula available in paper) heterojunction photodetectors operating in the 2-2.4 micrometers wavelength region. Experiments on LPE growth of high-x- content quaternaries as well as optimization of device processing has been carried out. LPE growth at Tapproximately equals 530DEGC enabled obtaining lattice matched heterostructures with 19% indium in the active layer In (formula available in paper) and photodetectors with (lambda) co=2.25micrometers . By increasing the temperature of epitaxial growth to 590DEGC In (formula available in paper)heterostructures (with 23%indium content suitable for photodetectors with (lambda) co=2.35 micrometers have been obtained. Mesa-type photodiodes were fabricated by RIE in Ccl (formula available in paper) plasma and passivated electrochemically in (formula available in paper). These devices are characterized by differential resistance up to (formula available in paper) and the detectivity in the range (formula available in paper), in dependence on the photodiode active area cutoff wavelength.

ACS Style

Tadeusz T. Piotrowski; Anna Piotrowska; E. Kaminska; M. Piskorski; Ewa Papis-Polakowska; K. Golaszewska; J. Katcki; Jacek Ratajczak; J. Adamczewska; Andrzej Wawro; Józef Piotrowski; Zbigniew Orman; Jaroslaw Pawluczyk; Zenon Nowak. Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors. International Conference on Solid State Crystals 2000 2001, 4413, 339 -345.

AMA Style

Tadeusz T. Piotrowski, Anna Piotrowska, E. Kaminska, M. Piskorski, Ewa Papis-Polakowska, K. Golaszewska, J. Katcki, Jacek Ratajczak, J. Adamczewska, Andrzej Wawro, Józef Piotrowski, Zbigniew Orman, Jaroslaw Pawluczyk, Zenon Nowak. Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors. International Conference on Solid State Crystals 2000. 2001; 4413 ():339-345.

Chicago/Turabian Style

Tadeusz T. Piotrowski; Anna Piotrowska; E. Kaminska; M. Piskorski; Ewa Papis-Polakowska; K. Golaszewska; J. Katcki; Jacek Ratajczak; J. Adamczewska; Andrzej Wawro; Józef Piotrowski; Zbigniew Orman; Jaroslaw Pawluczyk; Zenon Nowak. 2001. "Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors." International Conference on Solid State Crystals 2000 4413, no. : 339-345.

Conference paper
Published: 15 December 2000 in International Symposium on Optical Science and Technology
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We report an advanced Hg1-xCdxTe photovoltaic detector based on monolithic Hg1-xCdxTe heterostructure with 3-dimensional architecture. It consists of a narrow gap, p-type Hg1-xCdxTe small size (approximately equals 10x10x7 micrometers ) absorber of infrared radiation buried in a graded gap Hg1-xCdxTe layer surrounding absorber and heterojunction contacts obtained by selective doping of the graded gap Hg1-xCdxTe layer surrounding the absorber region. The heterostructure is passivated with a ZnS layer and coated with contact metallization to nPLU and p-type regions. The device is supplied with 50x50 micrometers immersion microlens formed directly in the CdZnTe substrate. These two layers also play a role of a mirror that improves quantum efficiency for weakly absorbed infrared radiation. In addition, the mirror eliminates backside incidence of thermal radiation, which prevents generation of dark current. The design of the device is optimized to achieve the best compromise between requirements of good absorption and collection efficiency; low thermal generation; and low parasitic impedance. Test devices have been prepared using the modified isothermal vapor phase epitaxy of Hg1-xCdxTe on profiled CdZnTe substrates, negative epitaxy of Hg1-xCdxTe to widen band gap of surface regions, selective doping, multiple chemical etching and ion milling, vacuum deposition of dielectric and metal layers.

ACS Style

Jozef Piotrowski; Miroslaw Grudzien; Zenon Nowak; Zbigniew Orman; Jaroslaw Pawluczyk; Mariusz Romanis; Waldemar Gawron. Uncooled photovoltaic Hg 1-x Cd x Te LWIR detectors. International Symposium on Optical Science and Technology 2000, 4130, 175 -185.

AMA Style

Jozef Piotrowski, Miroslaw Grudzien, Zenon Nowak, Zbigniew Orman, Jaroslaw Pawluczyk, Mariusz Romanis, Waldemar Gawron. Uncooled photovoltaic Hg 1-x Cd x Te LWIR detectors. International Symposium on Optical Science and Technology. 2000; 4130 ():175-185.

Chicago/Turabian Style

Jozef Piotrowski; Miroslaw Grudzien; Zenon Nowak; Zbigniew Orman; Jaroslaw Pawluczyk; Mariusz Romanis; Waldemar Gawron. 2000. "Uncooled photovoltaic Hg 1-x Cd x Te LWIR detectors." International Symposium on Optical Science and Technology 4130, no. : 175-185.

Conference paper
Published: 15 April 1997 in Photonics West '97
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We report here the use of isothermal vapor phase epitaxy to grow 3D Hg1-xCdxTe heterostructures for photoconductive, photovoltaic and photoelectromagnetic infrared detectors operated at near room temperatures. A reusable two-zone atmospheric pressure growth system has been developed.the system makes it possible not only to grow epilayers but also to perform in situ other processes such as high temperature annealing to control the compositional grading, the low temperature annealing for reduction of native acceptor concentration, and doping with foreign impurities. The required various composition profiles have been theoretically predicted and then implemented changing the temperature and mercury pressure during growth and subsequent thermal treatment. In addition, post-growth etching, substrate shaping, selective epitaxy, and negative epitaxy have been used to achieve 3D band gap profiles. The photoconductors were based on lightly p-type doped epilayers. Low diffusion length, weak absorption of radiation and a very low junction resistance makes it difficult to obtain useful performance of longwavelength photovoltaic devices operating at near room temperature. This was overcome with development of multiple heterojunction photovoltaic devices in which short elements were connected in series. To improve the performance of any type of heterostructure photodetector, monolithic optical immersion has been used. Detectivities as high as 1 X 108 cmHz1/2/W and 1 X 109 cmHz1/2/W were obtained at (lambda) equals micrometers and temperatures of 300 K and 220 K, respectively.

ACS Style

Krzysztof Adamiec; Miroslaw Grudzien; Zenon Nowak; Jaroslaw Pawluczyk; Jozef Piotrowski; Jarek Antoszewski; John Dell; Charles A. Musca; Lorenzo Faraone. Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors. Photonics West '97 1997, 2999, 34 -44.

AMA Style

Krzysztof Adamiec, Miroslaw Grudzien, Zenon Nowak, Jaroslaw Pawluczyk, Jozef Piotrowski, Jarek Antoszewski, John Dell, Charles A. Musca, Lorenzo Faraone. Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors. Photonics West '97. 1997; 2999 ():34-44.

Chicago/Turabian Style

Krzysztof Adamiec; Miroslaw Grudzien; Zenon Nowak; Jaroslaw Pawluczyk; Jozef Piotrowski; Jarek Antoszewski; John Dell; Charles A. Musca; Lorenzo Faraone. 1997. "Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors." Photonics West '97 2999, no. : 34-44.