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Mikhail Basov graduated from the National Nuclear Research University “Moscow Engineering Physics Institute” (MEPhi, Nano- and Microelectronics department, Moscow, Russia) as MSc in Electrical and Electronics Engineering. Since 2010 he currently works as R&D Engineer focused on developing MEMS piezoresistive pressureand microelectronic temperature sensors in Dukhov Authomatic Research Institute (FSUE VNIIA, Moscow, Russia). He received the Ph.D. degree from MEPhI in 2022. His PhD thesis is about creation of new pressure sensor chip with novel piezosensitive electrical circuit utilizing bipolar-junction transistor differential amplifier with negative feedback loop (PDA-NFL). He has authored over 10 articles, secured 14 Russian patents, and presented 14 conference papers. He received the award of University Technology Exposure Program by Wevolver, Mouser Electronics and ANSYS in 2022, and Innovative Leader Award in the Nuclear Industry by Rosatom in 2019
Mikhail Basov graduated from the National Nuclear Research University “Moscow Engineering Physics Institute” (MEPhi, Nano- and Microelectronics department, Moscow, Russia) as MSc in Electrical and Electronics Engineering. Since 2010 he currently works as R&D Engineer focused on developing MEMS piezoresistive pressureand microelectronic temperature sensors in Dukhov Authomatic Research Institute (FSUE VNIIA, Moscow, Russia). He received the Ph.D. degree from MEPhI in 2022. His PhD thesis is about creation of new pressure sensor chip with novel piezosensitive electrical circuit utilizing bipolar-junction transistor differential amplifier with negative feedback loop (PDA-NFL). He has authored over 10 articles, secured 14 Russian patents, and presented 14 conference papers. He received the award of University Technology Exposure Program by Wevolver, Mouser Electronics and ANSYS in 2022, and Innovative Leader Award in the Nuclear Industry by Rosatom in 2019
Ultra-High Sensitive Pressure Sensor with Increased Strength
State atomic energy corporation Rosatom
Wevolver, Mouser Electronics and ANSYS
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Research or Laboratory Scientist
01 November 2010 - 26 March 2025