As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., ${\mathrm{Si}}_x{\mathrm{C}}_y,$ are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer ${\mathrm{Si}}_x{\mathrm{C}}_y$ may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.

This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp³ hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.

Three dimensional (3D) graphene-based architectures such as 3D graphene-based hydrogels, aerogels, foams, and sponges have attracted huge attention owing to the combination of the structural interconnectivities and the outstanding properties of graphene which offer these interesting structures with low density, high porosity, large surface area, stable mechanical properties, fast mass and electron transport. They have been extensively studied for a wide range of applications including capacitors, batteries, sensors, catalyst, etc. There are several reviews focusing on the 3D graphene-based architectures and their applications. In this work, we only summarise the latest development on the preparation of 3D graphene-based architectures and their applications in supercapacitors, with emphasis on the preparation strategies

This study presents a new ultrathin SiC structure prepared by a catalyst free carbothermal method and post-sonication process. We have found that merging ultra-light 3D graphene foam and SiO together at high temperature leads to the formation of a complex SiC structure consisting of 3D SiC foam covered with traditional 1D nanowires. Upon breaking off, the 3D SiC was confirmed to be made from 2D nanosheets. The resulting novel 2D SiC nanosheets/nanoflakes were thoroughly investigated by using optical microscope, SEM, EDS, TEM, STEM, AFM, and Raman, which verified the highly crystallised structure feature. AFM results revealed an average thickness of 2–3 nm and average size of 2 μ m for the flakes. This new SiC structure could not only actualise SiC usage for nano-electronic devices but is also expected to open new applications as well.