Thermoelectric materials generate electric energy from waste heat, with conversion efficiency governed by the dimensionless figure of merit, ZT. Single-crystal tin selenide (SnSe) was discovered to exhibit a high ZT of roughly 2.2–2.6 at 913 K, but more practical and deployable polycrystal versions of the same compound suffer from much poorer overall ZT, thereby thwarting prospects for cost-effective lead-free thermoelectrics. The poor polycrystal bulk performance is attributed to traces of tin oxides covering the surface of SnSe powders, which increases thermal conductivity, reduces electrical conductivity and thereby reduces ZT. Here, we report that hole-doped SnSe polycrystalline samples with reagents carefully purified and tin oxides removed exhibit an ZT of roughly 3.1 at 783 K. Its lattice thermal conductivity is ultralow at roughly 0.07 W m^–1 K^–1 at 783 K, lower than the single crystals. The path to ultrahigh thermoelectric performance in polycrystalline samples is the proper removal of the deleterious thermally conductive oxides from the surface of SnSe grains. These results could open an era of high-performance practical thermoelectrics from this high-performance material.

Engineering perovskites with anions: The bandgap of the perovskite top layer in tandem silicon solar cells must be tuned to ∼1.7 electron volts. Usually, the cation composition is varied because the bromine-rich anion compositions with wide bandgaps are structurally unstable. Kim et al. show that by using phenethylammonium as a two-dimensional additive, along with iodine and thiocyanate, bromine-rich perovskite films can be stabilized. A tandem silicon cell delivered >26% certified power conversion efficiency, and a perovskite device maintained 80% of its initial power conversion efficiency of >20% after 1000 hours under illumination. Science , this issue p. 155