Xiang-Rong Chen

Prof. Xiang-Rong Chen

Sichuan University, Chengdu, Sichuan, China
orcid

Research Focus & Metrics

Academic Career Length

25Years (2002-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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27 March 2019 in Journal of Materials Chemistry A
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YLYang-Shun Lan
Yang-Shun Lan
Xiang-Rong ChenXiang-Rong Chen
Xiang-Rong Chen
CHCui-e Hu
Cui-e Hu
YCYan Cheng
Yan Cheng
QCQi-Feng Chen
Qi-Feng Chen
Thermoelectric materials can be used to convert waste heat into electrical energy, which is considered to be a cleaner form of energy that reduces carbon dioxide and greenhouse gas emissions. In this work, we study the thermoelectric properties of penta-PdX2 (X = S, Se, Te) using first-principles calculations together with Boltzmann transport theory. The dynamic and thermal stability of penta-PdX2 is confirmed based on phonon dispersion and ab initio molecular dynamics (AIMD) simulations. The transport coefficients, such as thermal conductivity (kl), power factor (PF) and thermoelectric figure of merit (ZT), exhibit strong anisotropy in both x and y directions. The lower thermal conductivity of penta-PdX2 can be attributed to the lower group velocity and larger phase space. The thermal conductivity of penta-PdX2 along the same direction (x or y direction) adheres to the trend of PdS2 > PdSe2 > PdTe2. The anisotropy of PF and kl of penta-PdX2 monolayers inevitably leads to anisotropy of ZT. The largest ZT values of penta-PdX2 (X = S, Se) for p-type are 0.85 and 1.18, respectively, while the maximum ZT value of penta-PdTe2 reaches 2.42. The predicted ZT values of penta-PdX2 are larger than those of the commercial TE material Bi2Te3 (about 0.8) and some other transition metal di-chalcogenides, indicating that penta-PdX2 (X = S, Se, Te) monolayers are potential anisotropic thermoelectric materials.

1 June 2006 in Physica B: Condensed Matter
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YHYan-Jun Hao
Yan-Jun Hao
Xiang-Rong ChenXiang-Rong Chen
Xiang-Rong Chen
HCHong-Ling Cui
Hong-Ling Cui
YBYu-Lin Bai
Yu-Lin Bai

17 February 2017 in 2D Materials
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CCCai Cheng
Cai Cheng
Jiatao SunJiatao Sun
Jiatao Sun
HLHang Liu
Hang Liu
HFHui-Xia Fu
Hui-Xia Fu
JZJin Zhang
Jin Zhang
SMSheng Meng
Sheng Meng
Planar borophene, the truly 2D monolayer boron, has been independently successfully grown on Ag(1 1 1) by two groups (2016 Nat. Chem . 8 563 and 2015 Science 350 1513), which has received widespreading attentions. The superconducting property has not been unambiguously observed, which is unexpected because light element boron should have strong electron–phonon coupling. To resolve this puzzle, we show that the superconducting transition temperature T c of β 12 borophene is effectively suppressed by the substrate-induced tensile strain and electron doping via first principles calculations. The biaxial tensile strain of 2% induced by Ag(1 1 1) significantly reduces T c from 14 K to 2.95 K; electron doping of 0.1 e − per boron atom further shrinks T c to 0.09 K. We also predict that the superconducting transition temperature in β 12 can be enhanced to 22.82 K with proper compressive strain (−1%) and 18.97 K with hole doping (0.1 h + per boron). Further studies indicate that the variation of T c is closely related to the density of states of σ bands near the Fermi surface. Our results help to explain the challenges to experimentally probe superconductivity in substrate-supported borophene.

8 February 2021 in ACS Applied Materials & Interfaces
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WTWang-Li Tao
Wang-Li Tao
YZYing-Qin Zhao
Ying-Qin Zhao
ZZZhao-Yi Zeng
Zhao-Yi Zeng
Xiang-Rong ChenXiang-Rong Chen
Xiang-Rong Chen
HGHua-Yun Geng
Hua-Yun Geng

14 September 2016 in Nanoscale
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CCCai Cheng
Cai Cheng
Jiatao SunJiatao Sun
Jiatao Sun
Xiang-Rong ChenXiang-Rong Chen
Xiang-Rong Chen
HFHui-Xia Fu
Hui-Xia Fu
SMSheng Meng
Sheng Meng
Single-layer transition-metal dichalcogenides (TMDs) such as MoS2 and MoSe2 exhibit unique electronic band structures ideal for hosting many exotic spin-orbital orderings. It has been widely accepted that Rashba spin splitting (RSS) is linearly proportional to the external field in heterostructure interfaces or to the potential gradient in polar materials. Surprisingly, an extraordinary nonlinear dependence of RSS is found in semiconducting TMD monolayers under a gate field. In contrast to small and constant RSS in polar materials, the potential gradient in non-polar TMDs gradually increases with the gate bias, resulting in nonlinear RSS with a Rashba coefficient an order-of-magnitude larger than the linear one. Most strikingly, under a large gate field MoSe2 demonstrates the largest anisotropic spin splitting among all known semiconductors to our knowledge. Based on the k·p model via symmetry analysis, we identify that the third-order contributions are responsible for the large nonlinear Rashba splitting. The gate tunable spin splitting found in semiconducting pristine TMD monolayers promises future spintronics applications in that spin polarized electrons can be generated by external gating in an experimentally accessible way.

28 October 2010 in Physical Review Letters
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JCJing Chang
Jing Chang
PLPeng Lian
Peng Lian
DWDong-Qing Wei
Dong-Qing Wei
Xiang-Rong ChenXiang-Rong Chen
Xiang-Rong Chen
QZQing-Ming Zhang
Qing-Ming Zhang
ZGZi-Zheng Gong
Zi-Zheng Gong
The Car-Parrinello molecular dynamics simulations were employed to investigate thermal decomposition of the solid nitromethane. It is found that it undergoes chemical decomposition at about 2200 K under ambient pressure. The initiation of reactions involves both proton transfer and commonly known C–N bond cleavage. About 75 species and 100 elementary reactions were observed with the final products being H2O, CO2, N2, and CNCNC. It represents the first complete simulation of solid-phase explosive reactions reported to date, which is of far-reaching implication for design and development of new energetic materials.