This paper compares different photocathodes that are applicable for electron injector systems and summarizes the most important photocathode properties influencing the performance as an electron source.

At the electron linac for beams with high brilliance and low emittance (ELBE) center for high-power radiation sources, the second version of a superconducting radio-frequency (SRF) photoinjector has been put into operation and has been routinely applied for user operation at the ELBE electron accelerator. SRF guns are suitable for generating a continuous wave electron beam with high average currents and high beam brightness. The SRF gun at ELBE has the goal to generate short electron pulses with bunch charges of 200–300 pC at typical repetition rates of 100 kHz for the production of superradiant, coherent terahertz radiation. The SRF gun includes a 3.5-cell, 1.3-GHz niobium cavity and a superconducting solenoid. A support system with liquid nitrogen (${\mathrm{LN}}_2$) cooling allows the operation of normal-conducting, high quantum efficiency photocathodes. We present the design and performance of the SRF gun as well as beam measurement results of the operation with Mg photocathodes at an acceleration gradient of $8\mathrm{MV}/\mathrm{m}$ (4 MeV kinetic energy). In the last section, we discuss the SRF gun application for production of coherent terahertz radiation at the ELBE facility.

As is well known, the quality of the photocathodes is essential for the stability and reliability of photoinjector operations. Especially for superconducting radio frequency photoinjectors (SRF guns), the photocathode represents one of the most critical parts. Benefiting from the fast development of photocathode technology in recent years, several SRF guns have been successfully operated or tested for beam generation at the kHz–MHz repetition rate. In this paper, we will review the achievements as well as the open questions in the applications of photocathodes for SRF gun operation. Furthermore, we will discuss the possible improvement of photocathodes for future CW electron sources.

Accelerator scientists have high demands on photocathodes possessing high quantum efficiency (QE) and long operational lifetime. p-GaN, as a new photocathode type, has recently gained more and more interest because of its ability to form a negative electron affinity (NEA) surface. Being activated with a thin layer of cesium, p-GaN:Cs photocathodes promise higher QE and better stability than the known photocathodes. In our study, p-GaN samples grown on sapphire or silicon were wet chemically cleaned and transferred into an ultra-high vacuum (UHV) chamber, where they underwent a subsequent thermal cleaning. The cleaned p-GaN samples were activated with cesium to obtain p-GaN:Cs photocathodes, and their performance was monitored with respect to their quality, especially their QE and storage lifetime. The surface topography and morphology were examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM) in combination with energy dispersive X-ray (EDX) spectroscopy. We have shown that p-GaN could be efficiently reactivated with cesium several times. This paper systematically compares the influence of wet chemical cleaning as well as thermal cleaning at various temperatures on the QE, storage lifetime and surface morphology of p-GaN. As expected, the cleaning strongly influences the cathodes’ quality. We show that high QE and long storage lifetime are achievable at lower cleaning temperatures in our UHV chamber.

This study shows residual surface carbon’s influence on photocathodes’ quantum efficiency based on p-GaN grown on sapphire by metal organic chemical vapor deposition. An X-ray photoelectron spectrometer (XPS) built in an ultrahigh vacuum system allowed the in-situ monitoring of the photocathode surface beginning immediately after their cleaning and throughout the activation and degradation processes. An atomically clean surface is necessary to achieve a negative electron affinity, which is the main prerequisite for high quantum efficiency. The p-GaN samples were cleaned with ethanol and underwent a sub-sequential thermal vacuum cleaning. Although carbon and oxygen contaminations are expected to be undesired impurities from the metal organic chemical vapor deposition, which remained on the surface, p-GaN could still form a negative electron affinity surface when exclusively activated with cesium. After the activation with cesium, a shift to a higher binding energy of the photoemission peaks was observed, and a new species, a so-called cesium carbide, was formed, growing over time. The XPS data elucidated the critical role of these cesium carbide species in photocathode degradation. The X-ray damage to the p-GaN:Cs photocathodes, especially the influence on the cesium, was additionally discussed.

This work discusses the influence of different cleaning procedures on p‐gallium nitride (GaN) grown on sapphire by metal–organic chemical vapor deposition. The cleaned p‐GaN surface was transferred into an ultrahigh vacuum chamber and studied by an X‐ray photoelectron spectrometer, revealing that a cleaning with a so‐called “piranha” procedure results in low carbon and oxygen concentrations on the p‐GaN surface. Contrary, a cleaning that solely uses ethanol represents a simple cleaning but leads to an increase of carbon and oxygen contaminations on the surface. Afterward, the cleaned p‐GaN samples underwent a subsequential vacuum thermal cleaning at various temperatures to achieve an atomically clean surface. X‐ray photoelectron spectroscopy (XPS) measurements revealed residual oxygen and carbon on the p‐GaN surface. Thus, a thermal treatment under a vacuum did not entirely remove these organic contaminations, although the thermal cleaning reduced their peak intensities. The complete removal of carbon and oxygen contaminants was only achieved by argon ion sputtering, which is accompanied by a strong depletion of the nitrogen on the p‐GaN surface. The treatments cause a large number of surface defects preventing the formation of a negative electron surface when the p‐GaN is activated with a thin layer of cesium.