Low-power-consumption optical devices are crucial for large-scale photonic integrated circuits (PICs). In this paper, a three-dimensional (3D) polymer variable optical attenuator (VOA) is proposed. For monolithic integration of silica and polymer-based planar lightwave circuits (PLCs), the vertical VOA is inserted between silica-based waveguides. Optical and thermal analyses are performed through the beam propagation method (BPM) and finite-element method (FEM), respectively. A compact size of 3092 μm × 4 μm × 7 μm is achieved with a vertical multimode interference (MMI) structure. The proposed VOA shows an insertion loss (IL) of 0.58 dB and an extinction ratio (ER) of 21.18 dB. Replacing the graphene heater with an aluminum (Al) electrode, the power consumption is decreased from 29.90 mW to 21.25 mW. The rise and fall time are improved to 353.85 μs and 192.87 μs, respectively. The compact and high-performance VOA shows great potential for a variety of applications, including optical communications, integrated optics, and optical interconnections.

Traditional temperature detection has limitations in terms of sensing accuracy and response time, while chip-level photoelectric sensors based on the thermo-optic effect can improve measurement sensitivity and reduce costs. This paper presents on-chip temperature sensors based on polysilicon (p-Si) waveguides. Dual-microring resonator (MRR) and asymmetric Mach–Zehnder interferometer (AMZI) sensors are demonstrated. The experimental results show that the sensitivities of the sensors based on AMZI and MRR are 86.6 pm/K and 85.7 pm/K, respectively. The temperature sensors proposed in this paper are compatible with the complementary metal-oxide-semiconductor (CMOS) fabrication technique. Benefitting from high sensitivity and a compact footprint, these sensors show great potential in the field of photonic-electronic applications.