Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self‐powered photodetector is developed with broadband response ranging from deep ultraviolet to near‐infrared by combining FA_1−xCs_xPbI₃ perovskite with PdSe₂ layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as‐assembled PdSe₂/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at ≈800 nm. The device also shows a large on/off ratio of ≈10⁴, a high responsivity (R) of 313 mA W⁻¹, a decent specific detectivity (D*) of ≈10¹³ Jones, and a rapid response speed of 3.5/4 µs. These figures of merit are comparable with or much better than most of the previously reported perovskite detectors. In addition, the PdSe₂/perovskite device exhibits obvious sensitivity to polarized light, with a polarization sensitivity of 6.04. Finally, the PdSe₂/perovskite detector can readily record five “P,” “O,” “L,” “Y,” and “U” images sequentially produced by 808 nm. These results suggest that the present PdSe₂/perovskite Schottky junction photodetectors may be useful for assembly of optoelectronic system applications in near future.

The two-dimensional layered semiconducting tungsten disulfide (WS₂) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS₂ films with tens-of-nanometers thickness through magnetron sputtering and post annealing process. The produced WS₂ films with low resistance (4.2 kΩ) are used to fabricate broadband sensitive photodetectors in the ultraviolet to visible region. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 53.3 A/W and a high detectivity of 1.22 × 10¹¹ Jones at 365 nm. The strategy reported paves new way towards the large scale growth of transferable high quality, uniform WS₂ films for various important applications including high performance photodetectors, solar cell, photoelectrochemical cell and so on.