Prof. Tetsuo Soga
Nagoya Institute of Technology
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Academic Career Length
43Years (1984-Present)
(Calculated once Scilit publication data is synced: current year − year of first publication + 1)
Representative Publications
View All Publications20 October 2017 in ACS Photonics
Journal Article
Vinod KumarONO. M. Ntwaeaborwa
O. M. Ntwaeaborwa
Tetsuo SogaVDViresh Dutta
Viresh Dutta
HSH. C. Swart
H. C. Swart
1 June 1998 in Journal of Crystal Growth
Journal Article
HIHiroyasu Ishikawa
Hiroyasu Ishikawa
KYKensaku Yamamoto
Kensaku Yamamoto
TETakashi Egawa
Takashi Egawa
Tetsuo SogaTJTakashi Jimbo
Takashi Jimbo
MUMasayoshi Umeno
Masayoshi Umeno
1 April 2011 in Separation and Purification Technology
Journal Article
SSS.M. Sanip
S.M. Sanip
Ahmad Fauzi IsmailPGP.S. Goh
P.S. Goh
Tetsuo SogaMTM. Tanemura
M. Tanemura
YHYasuhiko Hayashi
Yasuhiko Hayashi1 September 2010 in Journal of Applied Physics
Journal Article
MSM. Subramanian
M. SubramanianPTP. Thakur
P. ThakurMTM. Tanemura
M. Tanemura
THT. Hihara
T. Hihara
VGV. Ganesan
V. GanesanTJT. Jimbo
T. Jimbo
+3
This paper reports an in-depth study on nanocrystalline Gd-doped ZnO thin films synthesized using versatile pulsed spray pyrolysis method and exhibit room temperature ferromagnetism. The detailed structural and microstructural studies confirm that the doped Gd ions occupy Zn sites and the peak shift can be elucidated by charge neutrality. Optical investigation shows that the Gd doping in ZnO lattice leads to a decrease in the near band edge position due to the introduction of new unoccupied states by electrons. The electronic structure of the at the edge shows the evolution of pre-edge spectral features similar to cuprates and manganites, and also confirms the strong hybridization of states. Furthermore, the edge provides evidence that Gd ions are in the trivalent state. Hysteresis measurements demonstrate that the Gd-doped ZnO films are magnetically anisotropic and exhibit intrinsic ferromagnetic behavior at room temperature. Higher magnetization in 3 kOe values is observed for a field applied perpendicular to the sample surface compared to the in-plane direction.
1 July 2007 in Materials Letters
Journal Article
15 May 1985 in Journal of Applied Physics
Journal Article
Tetsuo SogaSHShuzo Hattori
Shuzo Hattori
SSShiro Sakai
Shiro Sakai
MTMasanari Takeyasu
Masanari Takeyasu
MUMasayoshi Umeno
Masayoshi Umeno
GaAs grown on Si substrate with AlP, AlGaP, GaP/GaAs0.5P0.5 superlattice, and GaAs0.5P0.5/GaAs superlattice was investigated by varying the structure of the intermediate layers between GaAs and Si by metalorganic chemical vapor deposition. It was found that (1) the insertion of AlP and AlGaP layers makes the crystallinity and the surface morphology better, (2) PL (photoluminescence) intensity with two superlattice layers is about one order of magnitude stronger than that without these layers, (3) the crack formation in the GaAs surface layer can be avoided by the strained superlattice layers, (4) the PL intensity has a maximum at about 20 nm for each layer thickness in the superlattices, and (5) the PL intensity increases and the carrier concentration decreases while increasing the thickness of the surface GaAs and saturates over 3 μm. The PL intensity of GaAs on Si substrates is about 80% of that grown on GaAs substrates.
About Me
Tetsuo Soga received his PhD degree from Nagoya University in 1987. He was a Research Associate from April 1987 to May1992, an Associate Professor from June 1992 to Sept. 2005, and a Professor from Oct. 2005 to March 2025 at Nagoya Institute of Technology. Currently, he is serving as a Professor Emeritus at the same university. In past he worked as a Visiting Professor at Universiti Teknologi MARA in 2010 and Universiti Malaya in 2024. He has published more than 500 peer-reviewed publications and has an h-index of 52 with over 10,000 citations (Scopus). He has delivered more than 40 invited talks at international conferences. He has supervised 96 master’s students and 20 doctoral students. He has expertise in the fields of materials science and engineering. His research focused on heteroepitaxy, III-V compound tandem solar cells, flexible solar cells, nano-carbon-based solar cells, polymer solar cells, lead-free perovskite solar cells, etc. He has conducted several national and international projects on solar cells as a principal investigator and has participated in an extensive amount of research as a research collaborator. His current research deals with perovskite materials for future energy conversion devices.