We demonstrate an ultralow loss monolithic integrated lithium niobate photonic platform consisting of dry-etched subwavelength waveguides with extracted propagation losses as low as 2.7 dB/m and microring resonators with quality factors up to ${10}^7$.

Periodically poled lithium niobate (PPLN) waveguides are a powerful platform for efficient wavelength conversion. Conventional PPLN converters, however, typically require long device lengths and high pump powers due to the limited nonlinear interaction strength. Here we use a nanostructured PPLN waveguide to demonstrate an ultrahigh normalized efficiency of $2600\%/\mathrm{W}-{\mathrm{cm}}^2$ for second-harmonic generation of 1.5 μm radiation, more than 20 times higher than that in state-of-the-art diffused waveguides. This is achieved by a combination of sub-wavelength optical confinement and high-fidelity periodic poling at a first-order poling period of 4 μm. Our highly integrated PPLN waveguides are promising for future chip-scale integration of classical and quantum photonic systems.

Since the emergence of optical fiber communications, lithium niobate (LN) has been the material of choice for electro-optic modulators, featuring high data bandwidth and excellent signal fidelity. Conventional LN modulators however are bulky, expensive and power hungry, and cannot meet the growing demand in modern optical data links. Chip-scale, highly integrated, LN modulators could offer solutions to this problem, yet the fabrication of low-loss devices in LN thin films has been challenging. Here we overcome this hurdle and demonstrate monolithically integrated LN electro-optic modulators that are significantly smaller and more efficient than traditional bulk LN devices, while preserving LN’s excellent material properties. Our compact LN electro-optic platform consists of low-loss nanoscale LN waveguides, micro-ring resonators and miniaturized Mach-Zehnder interferometers, fabricated by directly shaping LN thin films into sub-wavelength structures. The efficient confinement of both optical and microwave fields at the nanoscale dramatically improves the device performances featuring a half-wave electro-optic modulation efficiency of 1.8 V∙cm while operating at data rates up to 40 Gbps. Our monolithic LN nanophotonic platform enables dense integration of high-performance active components, opening new avenues for future high-speed, low power and cost-effective communication networks.

Electro-optic modulators (EOMs) convert signals from the electrical to the optical domain. They are at the heart of optical communication, microwave signal processing, sensing, and quantum technologies. Next-generation EOMs require high-density integration, low cost, and high performance simultaneously, which are difficult to achieve with established integrated photonics platforms. Thin-film lithium niobate (LN) has recently emerged as a strong contender owing to its high intrinsic electro-optic (EO) efficiency, industry-proven performance, robustness, and, importantly, the rapid development of scalable fabrication techniques. The thin-film LN platform inherits nearly all the material advantages from the legacy bulk LN devices and amplifies them with a smaller footprint, wider bandwidths, and lower power consumption. Since the first adoption of commercial thin-film LN wafers only a few years ago, the overall performance of thin-film LN modulators is already comparable with, if not exceeding, the performance of the best alternatives based on mature platforms such as silicon and indium phosphide, which have benefited from many decades of research and development. In this mini-review, we explain the principles and technical advances that have enabled state-of-the-art LN modulator demonstrations. We discuss several approaches, their advantages and challenges. We also outline the paths to follow if LN modulators are to improve further, and we provide a perspective on what we believe their performance could become in the future. Finally, as the integrated LN modulator is a key subcomponent of more complex photonic functionalities, we look forward to exciting opportunities for larger-scale LN EO circuits beyond single components.