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Kingsley A. Ogudo-PhD: Received the HND B-Tech. Degrees in electrical and electronics engineering from Federal Polytechnic Auchi, Nigeria, and Master in Electronics/telecommunication engineering and Doctoral Degree in electrical and electronics engineering technology from the Tshwane University of Technology (TUT), South Africa, in 2010 and 2016 respectively. He received his Ph.D. in Electronics and Optoelectronics systems from the University of Paris Est, France in July year 2018. His research interest includes electronic, optoelectronic devices, Power electronics; System Integration of Devices based on Renewable Energy management Sources, Telecommunication engineering high-frequency electronics, AI, IoT and Data Analytics, physics and applied mathematics. He is a Professional Engineer Technologist certified by ECSA and he is a member of the IEEE Society. He is a senior Member of SAIEE & and the secretary of SAIEE Innovation & Entrepreneurship chapter.He has published more than 35 international Journal articles and conference papers. He is currently a Senior Lecturer/Researcher at the Department of Electrical and Electronics Engineering, University of Johannesburg (UJ), South Africa
In 5G systems, enhancing the energy efficiency (EE) and spectrum efficiency (SE) is a significant task that is capable of fulfilling the demand of future wireless networks and providing Quality of Service (QoS) provisioning, such as high throughput with low power consumption. In the present work, a look-up table enabled a fuzzy-based approach to investigate the SE and EE issues in 5G networks and obtained an efficient symmetrical trade-off between them to enhance the system’s overall performance. We completed simulations in NS-2.31 software version 2.31, and MATLAB is used to visualize the results. The proposed model achieved maximum values of EE and SE of 0.92 bit/J/Hz with a sensing time τs(LUT) = 20 ms. Furthermore, optimizing the sensing time and the secondary user (SU) transmission power, yielded a maximum EE and provided a QoS provisioned cognitive radio-enabled 5G network.
Osamah Ibrahim Khalaf; Kingsley A. Ogudo; Manwinder Singh. A Fuzzy-Based Optimization Technique for the Energy and Spectrum Efficiencies Trade-Off in Cognitive Radio-Enabled 5G Network. Symmetry 2020, 13, 47 .
AMA StyleOsamah Ibrahim Khalaf, Kingsley A. Ogudo, Manwinder Singh. A Fuzzy-Based Optimization Technique for the Energy and Spectrum Efficiencies Trade-Off in Cognitive Radio-Enabled 5G Network. Symmetry. 2020; 13 (1):47.
Chicago/Turabian StyleOsamah Ibrahim Khalaf; Kingsley A. Ogudo; Manwinder Singh. 2020. "A Fuzzy-Based Optimization Technique for the Energy and Spectrum Efficiencies Trade-Off in Cognitive Radio-Enabled 5G Network." Symmetry 13, no. 1: 47.
Data from sensor-bearing satellites requires processing aboard terrestrial data centres that use water for cooling at the expense of high data-transfer latency. The reliance of terrestrial data centres on water increases their water footprint and limits the availability of water for other applications. Therefore, data centres with low data-transfer latency and reduced reliance on Earth’s water resources are required. This paper proposes space habitat data centres (SHDCs) with low latency data transfer and that use asteroid water to address these challenges. The paper investigates the feasibility of accessing asteroid water and the reduction in computing platform access latency. Results show that the mean asteroid water access period is 319.39 days. The use of SHDCs instead of non-space computing platforms reduces access latency and increases accessible computing resources by 11.9–33.6% and 46.7–77% on average, respectively.
Ayodele Periola; Akintunde Alonge; Kingsley Ogudo. Space Habitat Data Centers—For Future Computing. Symmetry 2020, 12, 1487 .
AMA StyleAyodele Periola, Akintunde Alonge, Kingsley Ogudo. Space Habitat Data Centers—For Future Computing. Symmetry. 2020; 12 (9):1487.
Chicago/Turabian StyleAyodele Periola; Akintunde Alonge; Kingsley Ogudo. 2020. "Space Habitat Data Centers—For Future Computing." Symmetry 12, no. 9: 1487.
Data from sensor bearing satellites requires processing aboard terrestrial data centers that use water for cooling at the expense of high data transfer latency. The reliance of terrestrial data centers on water increases their water footprint and limits the availability of water for other applications. Therefore, data centers with low data transfer latency and reduced reliance on earth’s water resources are required. This paper proposes space habitat data centers (SHDCs) with low latency data transfer and that use asteroid water to address these challenges. The paper investigates the feasibility of accessing asteroid water and the reduction in computing platform access latency. Results show that the mean asteroid water access period is 319.39 days. The use of SHDCs instead of non-space computing platforms reduces access latency and increases accessible computing resources by (11.9% – 33.6%) and (46.7% – 77%) on average respectively.
Ayodele Periola; Akintunde Alonge; Kingsley Ogudo. Space Habitat Data Centers – For Future Computing. 2020, 1 .
AMA StyleAyodele Periola, Akintunde Alonge, Kingsley Ogudo. Space Habitat Data Centers – For Future Computing. . 2020; ():1.
Chicago/Turabian StyleAyodele Periola; Akintunde Alonge; Kingsley Ogudo. 2020. "Space Habitat Data Centers – For Future Computing." , no. : 1.
With the advancement of new technologies, the number of connected devices, the amount of data generated, and the need to build an intelligently connected network of things to improve and enrich the human ecosystem open new doors to modifications and adaptations of current cellular network infrastructures. While more focus is given to low power wide area (LPWA) applications and devices, a significant challenge is the definition of Internet of Things (IoT) use cases and the value generation of applications on already existing IoT devices. Smartphones and related devices are currently manufactured with a wide range of smart sensors such as accelerometers, video sensors, compasses, gyros, proximity sensors, fingerprint sensors, temperature sensors, and biometric sensors used for various purposes. Many of these sensors can be automatically expanded to monitor a user’s daily activities (e.g., fitness workouts), locations, movements, and real-time body temperatures. Mobile network operators (MNOs) play a substantial role in providing IoT communications platforms, as they manage traffic flow in the network. In this paper, we discuss the global concept of IoT and machine-type communication (MTC), and we conduct device performance analytics based on data traffic collected from a cellular network. The experiment equips service providers with a model and framework to monitor device performance in a network.
Kingsley A. Ogudo; Dahj Muwawa Jean Nestor; Osamah Ibrahim Khalaf; Hamed Daei Kasmaei. A Device Performance and Data Analytics Concept for Smartphones’ IoT Services and Machine-Type Communication in Cellular Networks. Symmetry 2019, 11, 593 .
AMA StyleKingsley A. Ogudo, Dahj Muwawa Jean Nestor, Osamah Ibrahim Khalaf, Hamed Daei Kasmaei. A Device Performance and Data Analytics Concept for Smartphones’ IoT Services and Machine-Type Communication in Cellular Networks. Symmetry. 2019; 11 (4):593.
Chicago/Turabian StyleKingsley A. Ogudo; Dahj Muwawa Jean Nestor; Osamah Ibrahim Khalaf; Hamed Daei Kasmaei. 2019. "A Device Performance and Data Analytics Concept for Smartphones’ IoT Services and Machine-Type Communication in Cellular Networks." Symmetry 11, no. 4: 593.
600-650 nm wavelengths optical emission have been stimulated in two junction monolithically integrated circuit p+np+ Injection-avalanche silicon light emitting devices. This has been achieved after extensive modeling of potential light emitting mechanisms that could stimulate light emission at these wavelengths. Substantial evidence has been achieved that the optical emissions occur through short range phonon assisted inter-band transitions when low energy holes recombine with energetic electrons in a high impurity/ defect density environment. In particular, it is shown that the emission intensity depends on the balancing of densities of the energetic electrons and low energy holes in this environment. The devices are of micron dimension and operate at 8-10V, 10μA-10 mA regimes. Some of the emission spot sizes are submicron. Emission intensities are typically 70nW/μm-2/ mA. The observed effect may find several applications in futuristic on-chip electro-optic applications. A third control contact terminal offers modulation possibilities.
Lukas W. Snyman; Jean-Luc Polleux; Monuko Du Plessis; Kingsley A. Ogudo. Stimulating 600–650 nm Wavelength Optical Emission in Monolithically Integrated Silicon LEDs Through Controlled Injection-Avalanche and Carrier Density Balancing Technology. IEEE Journal of Quantum Electronics 2017, 53, 1 -9.
AMA StyleLukas W. Snyman, Jean-Luc Polleux, Monuko Du Plessis, Kingsley A. Ogudo. Stimulating 600–650 nm Wavelength Optical Emission in Monolithically Integrated Silicon LEDs Through Controlled Injection-Avalanche and Carrier Density Balancing Technology. IEEE Journal of Quantum Electronics. 2017; 53 (5):1-9.
Chicago/Turabian StyleLukas W. Snyman; Jean-Luc Polleux; Monuko Du Plessis; Kingsley A. Ogudo. 2017. "Stimulating 600–650 nm Wavelength Optical Emission in Monolithically Integrated Silicon LEDs Through Controlled Injection-Avalanche and Carrier Density Balancing Technology." IEEE Journal of Quantum Electronics 53, no. 5: 1-9.
In this paper, the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias is presented. It is theoretically deducted that these Si-LEDs can operate in GHz range and provide reliable operation. The modulation of Si-LED is verified using the existing two-dimensional (2-D) models to simulate the vertical and lateral fields. With the help of Monte Carlo and Rsoft BeamPROP simulations, the vertical emission, focusing, refraction, splitting and wave-guiding are optimized in standard CMOS technology at 750 nm wavelength. Since the Si-LEDs, waveguides, and Si-photo-detector can be integrated on a single chip, a small micro-photonic system could be realized in the CMOS integrated circuitry standard platform.
Kaikai Xu; Lukas W. Snyman; Jean-Luc Polleux; Kingsley A. Ogudo; Carlos Viana; Qi Yu; G.P. Li. Silicon LEDs toward high frequency on-chip link. Optik 2016, 127, 7002 -7020.
AMA StyleKaikai Xu, Lukas W. Snyman, Jean-Luc Polleux, Kingsley A. Ogudo, Carlos Viana, Qi Yu, G.P. Li. Silicon LEDs toward high frequency on-chip link. Optik. 2016; 127 (17):7002-7020.
Chicago/Turabian StyleKaikai Xu; Lukas W. Snyman; Jean-Luc Polleux; Kingsley A. Ogudo; Carlos Viana; Qi Yu; G.P. Li. 2016. "Silicon LEDs toward high frequency on-chip link." Optik 127, no. 17: 7002-7020.
In this article, we discuss the emission of visible light (400–900 nm) by a monolithically integrated silicon p-n junction under reverse bias. Silicon light emitting devices (Si-LEDs) could be designed and realized utilizing the standard complementary metal oxide semiconductor (CMOS) technology. Increased electroluminescence from the three-terminal MOS-like structure is observed, with the approach of carrier energy and momentum engineering design. Because Si-LEDs, waveguides, and photodetectors (Si) can be integrated on a single chip, a small microphotonic system could be realized in the CMOS integrated circuitry standard platform. The results can be substantially utilized for realizing a complete on-chip optical link.
Kaikai Xu; Kingsley A. Ogudo; Jean-Luc Polleux; Carlos Viana; Zhengfei Ma; Zebin Li; Qi Yu; Guannpyng Li; Lukas W. Snyman. Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits. LEUKOS 2016, 12, 1 -10.
AMA StyleKaikai Xu, Kingsley A. Ogudo, Jean-Luc Polleux, Carlos Viana, Zhengfei Ma, Zebin Li, Qi Yu, Guannpyng Li, Lukas W. Snyman. Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits. LEUKOS. 2016; 12 (4):1-10.
Chicago/Turabian StyleKaikai Xu; Kingsley A. Ogudo; Jean-Luc Polleux; Carlos Viana; Zhengfei Ma; Zebin Li; Qi Yu; Guannpyng Li; Lukas W. Snyman. 2016. "Light Emitting Devices in Si CMOS and RF Bipolar Integrated Circuits." LEUKOS 12, no. 4: 1-10.
Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. Visible light emitted from reverse-biased p-n junctions at highly localized regions, where avalanche breakdown occurs, can be used to realize a visible electro-optical sources in silicon by means of light-emitting diodes (Si-LEDs) is reviewed by characterizing the spectral distribution. Regarding applications, a monolithic optoelectronic integrated circuit (OEIC) for on-chip optical interconnection based on standard CMOS technology is discussed. Although there are some of the present challenges with regard to the realization of suitable electro-optical elements for diverse integrated circuit applications, the type of silicon light source can be further developed into be a Si-based optical short-distance on-chip optical interconnect applications.
Kaikai Xu; Ning Ning; Kingsley A. Ogudo; Jean-Luc Polleux; Qi Yu; Lukas W. Snyman. Light emission in silicon: from device physics to applications. International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 2015, 9667, 966702 .
AMA StyleKaikai Xu, Ning Ning, Kingsley A. Ogudo, Jean-Luc Polleux, Qi Yu, Lukas W. Snyman. Light emission in silicon: from device physics to applications. International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors. 2015; 9667 ():966702.
Chicago/Turabian StyleKaikai Xu; Ning Ning; Kingsley A. Ogudo; Jean-Luc Polleux; Qi Yu; Lukas W. Snyman. 2015. "Light emission in silicon: from device physics to applications." International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors 9667, no. : 966702.
Carrier energy and momentum engineering design concepts have been utilized to realize higher intensity, up to 200 nW.μm -2 in p+nn+ silicon avalanche-based LEDs in a silicon 0.35-μm RF bipolar process. The spectral range is from 600- to 850-nm wavelength region. Best performance are up to 600-nW vertical emission in a 3-μm square active area at 10 V and 1 mA (200 nW.um-2). The achieved emitted optical intensity is about 100 fold better as compared with other published work for nearest related devices. In particular, evidence has been obtained that light emission in silicon are strongly related to scattering mechanisms in a high density n+ dopant matrix of phosphorous atoms in silicon that has been exposed to successive thermal cycles, as well on the optimization of the carrier energy and momentum distributions during such interactions.
Lukas W. Snyman; Kaikai Xu; Jean-Luc Polleux; Kingsley Ogudo; Carlos Viana. Higher Intensity SiAvLEDs in an RF Bipolar Process Through Carrier Energy and Carrier Momentum Engineering. IEEE Journal of Quantum Electronics 2015, 51, 1 -10.
AMA StyleLukas W. Snyman, Kaikai Xu, Jean-Luc Polleux, Kingsley Ogudo, Carlos Viana. Higher Intensity SiAvLEDs in an RF Bipolar Process Through Carrier Energy and Carrier Momentum Engineering. IEEE Journal of Quantum Electronics. 2015; 51 (7):1-10.
Chicago/Turabian StyleLukas W. Snyman; Kaikai Xu; Jean-Luc Polleux; Kingsley Ogudo; Carlos Viana. 2015. "Higher Intensity SiAvLEDs in an RF Bipolar Process Through Carrier Energy and Carrier Momentum Engineering." IEEE Journal of Quantum Electronics 51, no. 7: 1-10.
Kaikai Xu; Weifeng Sun; Kingsley A. Ogudo; Lukas W. Snyman; Jean-Luc Polleux; Qi Yu; Guannpyng Li. Silicon Avalanche Based Light Emitting Diodes and Their Potential Integration into CMOS and RF Integrated Circuit Technology. Advances in Optical Communication 2014, 1 .
AMA StyleKaikai Xu, Weifeng Sun, Kingsley A. Ogudo, Lukas W. Snyman, Jean-Luc Polleux, Qi Yu, Guannpyng Li. Silicon Avalanche Based Light Emitting Diodes and Their Potential Integration into CMOS and RF Integrated Circuit Technology. Advances in Optical Communication. 2014; ():1.
Chicago/Turabian StyleKaikai Xu; Weifeng Sun; Kingsley A. Ogudo; Lukas W. Snyman; Jean-Luc Polleux; Qi Yu; Guannpyng Li. 2014. "Silicon Avalanche Based Light Emitting Diodes and Their Potential Integration into CMOS and RF Integrated Circuit Technology." Advances in Optical Communication , no. : 1.
Kingsley A. Ogudo; Lukas W. Snyman; Jean-Luc Polleux; Carlos Viana; Zerihun Tegegne. Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology. Third Conference on Sensors, MEMS and Electro-Optic Systems 2014, 92570I -92570I-17.
AMA StyleKingsley A. Ogudo, Lukas W. Snyman, Jean-Luc Polleux, Carlos Viana, Zerihun Tegegne. Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology. Third Conference on Sensors, MEMS and Electro-Optic Systems. 2014; ():92570I-92570I-17.
Chicago/Turabian StyleKingsley A. Ogudo; Lukas W. Snyman; Jean-Luc Polleux; Carlos Viana; Zerihun Tegegne. 2014. "Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology." Third Conference on Sensors, MEMS and Electro-Optic Systems , no. : 92570I-92570I-17.
Lukas W. Snyman; Jean-Luc Polleux; Kingsley A. Ogudo; Carlos Viana; Sebastain Wahl. High-intensity 100-nW 5GHz silicon avalanche LED utilizing carrier energy and momentum engineering. Silicon Photonics IX 2014, 89900L -89900L-12.
AMA StyleLukas W. Snyman, Jean-Luc Polleux, Kingsley A. Ogudo, Carlos Viana, Sebastain Wahl. High-intensity 100-nW 5GHz silicon avalanche LED utilizing carrier energy and momentum engineering. Silicon Photonics IX. 2014; ():89900L-89900L-12.
Chicago/Turabian StyleLukas W. Snyman; Jean-Luc Polleux; Kingsley A. Ogudo; Carlos Viana; Sebastain Wahl. 2014. "High-intensity 100-nW 5GHz silicon avalanche LED utilizing carrier energy and momentum engineering." Silicon Photonics IX , no. : 89900L-89900L-12.
Kingsley A. Ogudo; Lukas W. Snyman; Jean-Luc Poulleux; Carlos Viana; Zerihun Tegegne; Diethelm Schmieder. Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology. Optical Interconnects XIV 2014, 899108 -899108-16.
AMA StyleKingsley A. Ogudo, Lukas W. Snyman, Jean-Luc Poulleux, Carlos Viana, Zerihun Tegegne, Diethelm Schmieder. Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology. Optical Interconnects XIV. 2014; ():899108-899108-16.
Chicago/Turabian StyleKingsley A. Ogudo; Lukas W. Snyman; Jean-Luc Poulleux; Carlos Viana; Zerihun Tegegne; Diethelm Schmieder. 2014. "Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology." Optical Interconnects XIV , no. : 899108-899108-16.
This paper analyzes the optical propagation and refraction phenomena in various complementary metal–oxide–semiconductor (CMOS) structures at 750 nm wavelength. Operation at these wavelengths offers the potential realizations of small microphotonic systems and micro-opto-electro-mechanical systems (MOEMS) in CMOS integrated circuitry, since Si-based optical sources, waveguides, and silicon (Si) detectors can all be integrated on a single chip. It could also increase the optical coupling efficiencies to external optical fibers. With the help of Monte Carlo and RSoft BeamPROP simulations, we demonstrate achievements with regard to optimizing vertical emission, focusing, refraction, splitting and wave guiding in 0.35 to 1.2 μm CMOS technology at 750 nm wavelength. The material properties, refractive indices, and thicknesses of various CMOS over-layers were incorporated in the simulations and analyses. The analyses show that both Si nitride and Si oxi-nitride offer good viability for developing such waveguides. Effective single-mode wave-guiding with calculated loss characteristics of 0.65 dB·cm−1, with modal dispersion characteristics of less than 0.2 ps·cm−1 and with a bandwidth-length product of higher than 100 GHz-cm seems possible. A first iteration realization of an optical link is demonstrated, utilizing specially designed avalanche-based Si-LEDs and a specially designed first iteration CMOS waveguide. Potential applications of avalanche-based Si LEDs into microphotonic systems and MOEMS are furthermore proposed and highlighted.
Kingsley A. Ogudo; Diethelm Schmieder; Daniel Foty; Lukas W. Snyman. Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems. Journal of Micro/Nanolithography, MEMS, and MOEMS 2013, 12, 013015 -013015.
AMA StyleKingsley A. Ogudo, Diethelm Schmieder, Daniel Foty, Lukas W. Snyman. Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems. Journal of Micro/Nanolithography, MEMS, and MOEMS. 2013; 12 (1):013015-013015.
Chicago/Turabian StyleKingsley A. Ogudo; Diethelm Schmieder; Daniel Foty; Lukas W. Snyman. 2013. "Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems." Journal of Micro/Nanolithography, MEMS, and MOEMS 12, no. 1: 013015-013015.
The utilization of Organic Light Emitting Diodes (OLEDs) and Si Avalanche LEDs emitting at 0.45 - 0.75 micron enable the development of high speed all -Silicon CMOS based optical communication systems without the incorporation of materials such as Ge or III-V components. The development of low loss and high curvature optical waveguides in CMOS technology at these wavelengths, however, offers major challenges. Advanced optical simulation software was hence used in order to develop effective CMOS based waveguides, using CMOS materials characteristics, processing parameters, and the spectral characteristics of CMOS Av LEDs. The analyses show that both silicon nitride and Si oxi-nitride offer good viability for developing such waveguides, utilizing 0.2 to 1.5 micron wide CMOS over-layer as well as trench-based technology. Particularly, trench based technology are very attractive, since the optical sources can then be integrated with silicon avalanche based LEDs with trench-based waveguides on the same plane with standard CMOS processing procedures. Effective single mode wave-guiding with calculated loss characteristics of 0.65 dB.cm-1 and modal dispersion characteristics of 0.2 ps.cm-1 and with a bandwidth-length product of higher than 100 GHz-cm are predicted.
Lukas Snyman; Kingsley Ogudo; Daniel Foty. Development of a 0.75 micron wavelength, all-silicon, CMOS-based optical communication system. SPIE OPTO 2011, 79430K -79430K-12.
AMA StyleLukas Snyman, Kingsley Ogudo, Daniel Foty. Development of a 0.75 micron wavelength, all-silicon, CMOS-based optical communication system. SPIE OPTO. 2011; ():79430K-79430K-12.
Chicago/Turabian StyleLukas Snyman; Kingsley Ogudo; Daniel Foty. 2011. "Development of a 0.75 micron wavelength, all-silicon, CMOS-based optical communication system." SPIE OPTO , no. : 79430K-79430K-12.
This paper discusses the simulation, development and potential application of Si LEDs in pre-specified complementary metal oxide semiconductors (CMOS) integrated circuit structures in the wavelength range of 450nm - 750nm. A MONTE CARLO simulation technique was developed in which the optical wave propagation phenomena as relevant in CMOS structures were continuously updated as the optical ray progresses through the structure. Refractive index of the material, layers thickness and structure curvatures were all incorporated as ray propagation parameters. By using a multi-ray simulation approach, the overall propagation phenomena wrt refraction, reflection, scattering, and intensities could be evaluated in globular context in any complex CMOS integrated circuit structure in a progressive way. MATLAB software was used as a mathematical capable and programmable language to develop the dedicated software evaluation tool. Subsequently, some first iteration, conceptual, applications of MOEMS structures are demonstrated as implemented in Si CMOS integrated circuitry, utilizing Si InAva LEDs and silicon detectors.© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Lukas W. Snyman; Kingsley A. Ogudo; Monuko Du Plessis; Gustave Udahemuka. Application of Si LEDs (450nm-750nm) in CMOS integrated circuitry-based MOEMS: simulation and analysis. SPIE MOEMS-MEMS: Micro- and Nanofabrication 2009, 7208, 72080 -72080.
AMA StyleLukas W. Snyman, Kingsley A. Ogudo, Monuko Du Plessis, Gustave Udahemuka. Application of Si LEDs (450nm-750nm) in CMOS integrated circuitry-based MOEMS: simulation and analysis. SPIE MOEMS-MEMS: Micro- and Nanofabrication. 2009; 7208 ():72080-72080.
Chicago/Turabian StyleLukas W. Snyman; Kingsley A. Ogudo; Monuko Du Plessis; Gustave Udahemuka. 2009. "Application of Si LEDs (450nm-750nm) in CMOS integrated circuitry-based MOEMS: simulation and analysis." SPIE MOEMS-MEMS: Micro- and Nanofabrication 7208, no. : 72080-72080.
Kingsley A. Ogudo; Lukas W. Snyman; Monuko Du Plessis; Gustave Udahemuka. Simulation of Si-LED (450nm-750nm) light propagation phenomena in CMOS integrated circuitry for MOEMS applications. Micromachining and Microfabrication Process Technology XIV 2009, 72040 -72040.
AMA StyleKingsley A. Ogudo, Lukas W. Snyman, Monuko Du Plessis, Gustave Udahemuka. Simulation of Si-LED (450nm-750nm) light propagation phenomena in CMOS integrated circuitry for MOEMS applications. Micromachining and Microfabrication Process Technology XIV. 2009; ():72040-72040.
Chicago/Turabian StyleKingsley A. Ogudo; Lukas W. Snyman; Monuko Du Plessis; Gustave Udahemuka. 2009. "Simulation of Si-LED (450nm-750nm) light propagation phenomena in CMOS integrated circuitry for MOEMS applications." Micromachining and Microfabrication Process Technology XIV , no. : 72040-72040.