Jean-Michel Nunzi

Prof. Jean-Michel Nunzi

Physics Engineering Physics and Astronomy; Chemistry, Queen's University, Kingston, Canada
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Research Focus & Metrics

Academic Career Length

43Years (1984-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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29 March 2006 in Polymer International
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Journal Article
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AMAndré Moliton
André Moliton
Jean-Michel NunziJean-Michel Nunzi
Jean-Michel Nunzi

1 January 2002 in Comptes Rendus. Physique
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Journal Article
Open access
Jean-Michel NunziJean-Michel Nunzi
Jean-Michel Nunzi

1 January 1998 in Pure and Applied Optics: Journal of the European Optical Society Part A
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PLPhilippe Lefin
Philippe Lefin
CFCéline Fiorini
Céline Fiorini
Jean-Michel NunziJean-Michel Nunzi
Jean-Michel Nunzi

29 September 2003 in Advanced Materials
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Journal Article
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RBR. de Bettignies
R. de Bettignies
YNY. Nicolas
Y. Nicolas
PBP. Blanchard
P. Blanchard
ELE. Levillain
E. Levillain
Jean-Michel NunziJean-Michel Nunzi
Jean-Michel Nunzi
JRJ. Roncali
J. Roncali

15 June 1993 in Optics Letters
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Journal Article
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FCF. Charra
F. Charra
FKF. Kajzar
F. Kajzar
Jean-Michel NunziJean-Michel Nunzi
Jean-Michel Nunzi
PRP. Raimond
P. Raimond
EIE. Idiart
E. Idiart
The permanent all-optical poling of an azo-aromatic acrylic copolymer is experimentally demonstrated by seeding preparation in a backward phase-conjugation geometry. The microscopic mechanism involves an orientational hole burning followed by orientational redistribution caused by trans-to-cis isomerization of the azo-dye chromophores. The characteristic kinetics of growth and decay of the noncentrosymmetry grating is monitored by second-harmonic generation.

6 September 2004 in Applied Physics Letters
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KUK. N. Narayanan Unni
K. N. Narayanan Unni
RBRemi de Bettignies
Remi de Bettignies
SDSylvie Dabos-Seignon
Sylvie Dabos-Seignon
Jean-Michel NunziJean-Michel Nunzi
Jean-Michel Nunzi
Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) as the gate insulator. As-prepared devices showed normal p -type transistor operation. The ON- and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited excellent memory retention properties.