Takao Ishida

Dr. Takao Ishida


Research Focus & Metrics

Academic Career Length

36Years (1991-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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19 April 2013 in Advanced Materials
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Journal Article
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QWQingshuo Wei
Qingshuo Wei
MMMasakazu Mukaida
Masakazu Mukaida
YNYasuhisa Naitoh
Yasuhisa Naitoh
TITakao Ishida
Takao Ishida

23 July 1999 in Langmuir
Verified
Journal Article
Closed access
TITakao Ishida
Takao Ishida
NCNami Choi
Nami Choi
WMWataru Mizutani
Wataru Mizutani
HTHiroshi Tokumoto
Hiroshi Tokumoto
IKIsao Kojima
Isao Kojima
MFMasamichi Fujihira
Masamichi Fujihira

28 March 1998 in Langmuir
Verified
Journal Article
Closed access
TITakao Ishida
Takao Ishida
MHMasahiko Hara
Masahiko Hara
IKIsao Kojima
Isao Kojima
STSatoshi Tsuneda
Satoshi Tsuneda
NNNaoki Nishida
Naoki Nishida
WKWolfgang Knoll
Wolfgang Knoll

1 May 1993 in Journal of Applied Physics
Verified
Journal Article
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TITakao Ishida
Takao Ishida
HKH. Kobayashi
H. Kobayashi
YNY. Nakato
Y. Nakato
Indium tin oxide (ITO) films deposited on single‐crystal Si wafers by the electron‐beam‐(EB) evaporation method have been investigated by x‐ray photoelectron spectroscopy (XPS) together with work‐function and resistivity measurements. The XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The amount of the crystalline phase with respect to the amorphous phase for the ITO films, deposited with the incident angle of the ITO vapor to the Si substrate θi at 0°, is smaller than that for the ITO films deposited at θi=45°. The amount of the crystalline phase hardly depends on the conditions of postdeposition heat treatments, while that of the amorphous phase increases by raising the temperature of the heat treatments. Metal indium present in the films deposited at θi=0° is transformed into amorphous indium oxide by heating at 450 °C in air. Metal tin is also present near the ITO/Si interface for the ITO films deposited at θi=0°. The work function of the ITO films deposited at θi=0° is lower by 0.8 eV in maximum than that for the films deposited at θi=45°. It is concluded that the work function of the ITO films increases not only with a decrease in the amount of metal indium and metal tin in the films but also with an increase in the amount of the crystalline ITO phase with respect to that of the amorphous phase.

16 February 2015 in Materials
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Journal Article
Open access
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QWQingshuo Wei
Qingshuo Wei
MMMasakazu Mukaida
Masakazu Mukaida
KKKazuhiro Kirihara
Kazuhiro Kirihara
YNYasuhisa Naitoh
Yasuhisa Naitoh
TITakao Ishida
Takao Ishida
The thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT)-based materials have attracted attention recently because of their remarkable electrical conductivity, power factor, and figure of merit. In this review, we summarize recent efforts toward improving the thermoelectric properties of PEDOT-based materials. We also discuss thermoelectric measurement techniques and several unsolved problems with the PEDOT system such as the effect of water absorption from the air and the anisotropic thermoelectric properties. In the last part, we describe our work on improving the power output of thermoelectric modules by using PEDOT, and we outline the potential applications of polymer thermoelectric generators.

1 July 2010 in ACS Nano
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Journal Article
Closed access
KYKazuhiro Yanagi
Kazuhiro Yanagi
HUHiroki Udoguchi
Hiroki Udoguchi
SSSatoshi Sagitani
Satoshi Sagitani
YOYugo Oshima
Yugo Oshima
TTTaishi Takenobu
Taishi Takenobu
YMYutaka Maniwa
Yutaka Maniwa