Intricate topographical patterns can form on the surface of crystalline Ge(001) subject to low-energy ion irradiation in the reverse epitaxy regime, i.e., at elevated temperatures which enable dynamic recrystallization. We compare such nanoscale patterns produced by irradiation from varied polar and azimuthal ion incidence angles with corresponding calculated surface topographies. To this end, we propose a continuum equation including both anisotropic erosive and anisotropic diffusive effects. Molecular dynamics simulations provide the coefficients of angle-dependent sputter erosion for the calculations. By merely changing these coefficients accordingly, the experimentally observed surface morphologies can be reproduced, except for extreme ion incidence angles. Angle-dependent sputter erosion is thereby identified as a dominant mechanism in ion-induced pattern formation on crystalline surfaces under irradiation from off-normal incidence angles.

Asymmetrically sandwiched thin magnetic layers with perpendicular anisotropy and Dzyaloshinskii-Moriya interaction (DMI) is the prospective material science platform for spin-orbitronic technologies that rely on the motion of chiral magnetic textures, like skyrmions or chiral domain walls (DWs). The dynamic performance of a DW-based racetrack is defined by the strength of the DMI and the DW damping. The determination of the latter parameter is typically done based on technically challenging DW motion experiments. Here, we propose a method to access both the DMI constant and DW damping from static experiments by monitoring the tilt of magnetic DWs in nanostripes. We experimentally demonstrate that in perpendicularly magnetized ${\mathrm{//Cr}\mathrm{O}}_x\mathrm{/Co/Pt}$ stacks, DWs can be trapped on edge roughness in a metastable tilted state as a result of the DW dynamics driven by an external magnetic field. The measured tilt can be correlated to the DMI strength and DW damping in a self-consistent way in the frame of a theoretical formalism based on the collective coordinate approach.

We present a synchrotron-based x-ray scattering technique which allows disentangling magnetic properties of heterogeneous systems with nanopatterned surfaces. This technique combines the nanometer-range spatial resolution of surface morphology features provided by grazing incidence small angle x-ray scattering and the high sensitivity of nuclear resonant scattering to magnetic order. A single experiment thus allows attributing magnetic properties to structural features of the sample; chemical and structural properties may be correlated analogously. We demonstrate how this technique shows the correlation between structural growth and evolution of magnetic properties for the case of a remarkable magnetization reversal in a structurally and magnetically nanopatterned sample system.

The nickel monogermanide (NiGe) phase is known for its electrical properties such as low ohmic and low contact resistance in group-IV-based electronics. In this work, thin films of nickel germanides (Ni–Ge) were formed by magnetron sputtering followed by flash lamp annealing (FLA). The formation of NiGe was investigated on three types of substrates: on amorphous (a-Ge) as well as polycrystalline Ge (poly-Ge) and on monocrystalline (100)-Ge (c-Ge) wafers. Substrate and NiGe structure characterization was performed by Raman, TEM, and XRD analyses. Hall Effect and four-point-probe measurements were used to characterize the films electrically. NiGe layers were successfully formed on different Ge substrates using 3-ms FLA. Electrical as well as XRD and TEM measurements are revealing the formation of Ni-rich hexagonal and cubic phases at lower temperatures accompanied by the formation of the low-resistivity orthorhombic NiGe phase. At higher annealing temperatures, Ni-rich phases are transforming into NiGe, as long as the supply of Ge is ensured. NiGe layer formation on a-Ge is accompanied by metal-induced crystallization and its elevated electrical resistivity compared with that of poly-Ge and c-Ge substrates. Specific resistivities for 30 nm Ni on Ge were determined to be 13.5 μΩ·cm for poly-Ge, 14.6 μΩ·cm for c-Ge, and 20.1 μΩ·cm for a-Ge.

The formation of nanopores by highly charged ion impacts on freestanding fluorine-functionalized graphene is demonstrated. The process is driven by potential sputtering, which becomes active by changing the semimetallic property of graphene into a strongly insulating state by fluorination. The interaction of fluorographene with highly charged ions is also studied in terms of charge exchange and kinetic energy loss. A higher number of captured electrons and a larger kinetic energy loss than in pristine graphene are observed, which can be well explained by an increase in the ion neutralization length and in the atomic areal density of the target, respectively. Using a computer code based on a time-dependent scattering potential model, a connection between the efficiency of charge exchange and the fluorine coverage is revealed. Our results suggest a competition of two distinct nanostructure formation processes, leading either to pore formation or fluorine desorption.