This paper proposes a high-strain sensitivity turning dynamometer that combines several thin-film resistor grids into three Wheatstone full-bridge circuits that can measure triaxial cutting forces. This dynamometer can replace different cutter heads using flange connections. In order to improve the strain effect of the dynamometer, the strain film sensor is fixed on the regular octagonal connection plates on both ends of the elastomer by vacuum brazing, and the stepped groove structure is also designed inside the elastomer. The dynamometer model is simplified as a four-segment cantilever beam which has different sections. The measurement mechanism model of the dynamometer system is established by the transformation relationship between deflection and strain, under external force. The standard turning tool of 20 mm square is used as a reference. The influence of the structural dimensions of the dynamometer on its strain sensitivity coefficient K is studied. The applicability of the theoretical model of dynamometer strain is verified by finite element analysis. Finally, the dynamometer with the largest K value is subjected to the bending test and compared with a standard turning tool. The experimental results show that the measurement sensitivity of the dynamometer is 2.32 times greater than that of the standard turning tool. The results also show that this dynamometer can effectively avoid the influence of the pasting process on strain transmission, thus indicating its great potential for measuring cutting force in the future.

The thin-film strain sensor is a cutting-force sensor that can be integrated with cutting tools. The quality of the alloy film strain layer resistance grid plays an important role in the performance of the sensor. In this paper, the two film patterning processes of photolithography magnetron sputtering and photolithography ion beam etching are compared, and the effects of the geometric size of the thin-film resistance grid on the resistance value and resistance strain coefficient of the thin film are compared and analyzed. Through orthogonal experiments of incident angle, argon flow rate, and substrate negative bias in the ion beam etching process parameters, the effects of the process parameters on photoresist stripping quality, etching rate, surface roughness, and resistivity are discussed. The effects of process parameters on etching rate, surface roughness, and resistivity are analyzed by the range method. The effect of substrate temperature on the preparation of Ni Cr alloy films is observed by scanning electron microscope. The surface morphology of the films before and after ion beam etching is observed by atomic force microscope. The influence of the lithography process on the surface quality of the film is discussed, and the etching process parameters are optimized.