The explosive demand for a wide range of data processing has sparked interest towards a new logic gate platform as the existing electronic logic gates face limitations in accurate and fast computing. Accordingly, optoelectronic logic gates (OELGs) using photodiodes are of significant interest due to their broad bandwidth and fast data transmission, but complex configuration, power consumption, and low reliability issues are still inherent in these systems. Herein, we present a novel all-in-one OELG based on the bipolar spectral photoresponse characteristics of a self-powered perovskite photodetector (SPPD) having a back-to-back p⁺-i-n-p-p⁺ diode structure. Five representative logic gates (“AND”, “OR”, “NAND”, “NOR”, and “NOT”) are demonstrated with only a single SPPD via the photocurrent polarity control. For practical applications, we propose a universal OELG platform of integrated 8 × 8 SPPD pixels, demonstrating the 100% accuracy in five logic gate operations irrelevant to current variation between pixels.

High-performance deep ultraviolet (DUV) photodetectors operating at ambient conditions with < 280 nm detection wavelengths are in high demand because of their potential applications in diverse fields. We demonstrate for the first time, high-performance flexible DUV photodetectors operating at ambient conditions based on quantum dots (QDs) synthesized by femtosecond-laser ablation in liquid (FLAL) technique. Our method is facile without complex chemical procedures, which allows large-scale cost-effective devices. This synthesis method is demonstrated to produce highly stable and reproducible ZnO QDs from zinc nitride target (Zn3N2) without any material degradation due to water and oxygen molecule species, allowing photodetectors operate at ambient conditions. Carbon-doped ZnO QD-based photodetector is capable of detecting efficiently in the DUV spectral region, down to 224 nm, and exhibits high photo-responsivity and stability. As fast-response of DUV photodetector remains significant parameter for high-speed communication; we show fast-response QD-based DUV photodetector. Such surfactant-free synthesis by FLAL can lead to commercially available high-performance low-cost optoelectronic devices based on nanostructures for large scale applications.

Rotational dynamics of formamidinium in FAPbI₃ and mixed displacive/order–disorder instabilities investigated by MD simulations and group theory.

We demonstrate a novel, one-step, catalyst-free method for the production of size-controlled vertical highly conductive ZnO nanorod (NR) arrays with highly desirable characteristics by pulsed laser deposition using a Gd-doped ZnO target. Our study shows that an in situ transparent and conductive Gd nanolayer (with a uniform thickness of ∼1 nm) at the interface between a lattice-matched (11−20) a-sapphire substrate and ZnO is formed during the deposition. This nanolayer significantly induces a relaxation mechanism that controls the dislocation distribution along the growth direction; which consequently improves the formation of homogeneous vertically aligned ZnO NRs. We demonstrate that both the lattice orientation of the substrate and the Gd characteristics are important in enhancing the NR synthesis, and we report precise control of the NR density by changing the oxygen partial pressure. We show that these NRs possess high optical and electrical quality, with a mobility of 177 cm² (V s)⁻¹, which is comparable to the best-reported mobility of ZnO NRs. Therefore, this new and simple method has significant potential for improving the performance of materials used in a wide range of electronic and optoelectronic applications.