This paper focuses on the recent advances on radiolysis-assisted shape-controlled synthesis of noble metal nanostructures. The techniques and protocols for producing desirable shapes of noble metal nanoparticles are discussed through introducing the critical parameters which can influence the nucleation and growth mechanisms. Nucleation rate plays a vital role on the crystallinity of seeds while growth rate of different seeds’ facets determines the final shape of resultant nanoparticles. Nucleation and growth rate both can be altered with factors such as absorbed dose, capping agents, and experimental environment condition to control the final shape. Remarkable physical and chemical properties of synthesized noble metal nanoparticles by controlled morphology have been systematically evaluated to fully explore their applications.

Colloidal Cu@CuAlO₂-Al₂O₃ bimetallic nanoparticles were prepared by a gamma irradiation method in an aqueous system in the presence of polyvinyl pyrrolidone (PVP) and isopropanol respectively as a colloidal stabilizer and scavenger of hydrogen and hydroxyl radicals. The gamma irradiation was carried out in a ⁶⁰Co gamma source chamber with different doses up to 120 kGy. The formation of Cu@CuAlO₂-Al₂O₃ nanoparticles was observed initially by the change in color of the colloidal samples from colorless to brown. Fourier transform infrared spectroscopy (FTIR) confirmed the presence of bonds between polymer chains and the metal surface at all radiation doses. Results of transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDX), and X-ray diffraction (XRD) showed that Cu@CuAlO₂-Al₂O₃ nanoparticles are in a core-shell structure. By controlling the absorbed dose and precursor concentration, nanoclusters with different particle sizes were obtained. The average particle diameter increased with increased precursor concentration and decreased with increased dose. This is due to the competition between nucleation, growth, and aggregation processes in the formation of nanoclusters during irradiation.

The thermal treatment method was employed to prepare nickel-cobalt oxide (NiO/Co₃O₄) nanoparticles. This method was attempted to achieve the higher homogeneity of the final product. Specimens of nickel-cobalt oxide were characterized by various experimental techniques, including X-ray diffraction (XRD), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FTIR). X-ray diffraction results showed that there was no crystallinity in the predecessor, and it still had the amorphous phase. The formations of the crystalline phases of the nickel-cobalt oxide nanoparticles started from 350–500 °C, and the final products had different crystallite sizes ranging from 11–35 nm. Furthermore, the variation of DC conductivity (σ_dc), impedance, tangent loss (tgδ) and dielectric constant (ε′) of the calcined specimens with frequency in the range of 10²–10⁶ Hz was investigated. σ_dc showed a value of 1.9 × 10⁻⁶ S/m, 1.3 × 10⁻⁶ S/m and 1.6 × 10⁻⁶ S/m for the specimens calcined at 350, 400 and 450 °C, respectively. Additionally, a decrease in tgδ values with an increase in temperature was observed. Finally, the formed nanoparticles exhibited ferromagnetic behaviors, which were confirmed by using a vibrating sample magnetometer (VSM).

In this work, the dielectrophoretic force (F_DEP) response of Aluminium Microelectrode Arrays with tapered profile is investigated through experimental measurements and numerical simulations. A standard CMOS processing technique with a step for the formation of a tapered profile resist is implemented in the fabrication of Tapered Aluminium Microelectrode Arrays (TAMA). The F_DEP is investigated through analysis of the Clausius-Mossotti factor (CMF) and cross-over frequency (f_xo). The performance of TAMA with various side wall angles is compared to that of microelectrodes with a straight cut sidewall profile over a wide range of frequencies through FEM numerical simulations. Additionally, electric field measurement (EFM) is performed through scanning probe microscopy (SPM) in order to obtain the region of force focus in both platforms. Results showed that the tapered profile microelectrodes with angles between 60° and 70° produce the highest electric field gradient on the particles. Also, the region of the strongest electric field in TAMA is located at the bottom and top edge of microelectrode while the strongest electric field in microelectrodes with straight cut profile is found at the top corner of the microelectrode. The latter property of microelectrodes improves the probability of capturing/repelling the particles at the microelectrode’s side wall.

The junctionless nanowire transistor is a promising alternative for a new generation of nanotransistors. In this letter the atomic force microscopy nanolithography with two wet etching processes was implemented to fabricate simple structures as double gate and single gate junctionless silicon nanowire transistor on low doped p-type silicon-on-insulator wafer. The etching process was developed and optimized in the present work compared to our previous works. The output, transfer characteristics and drain conductance of both structures were compared. The trend for both devices found to be the same but differences in subthreshold swing, ‘on/off’ ratio, and threshold voltage were observed. The devices are ‘on’ state when performing as the pinch off devices. The positive gate voltage shows pinch off effect, while the negative gate voltage was unable to make a significant effect on drain current. The charge transmission in devices is also investigated in simple model according to a junctionless transistor principal.