Hyun Ho Lee

Prof. Hyun Ho Lee

Myongji University
orcid

Research Focus & Metrics

Academic Career Length

20Years (2007-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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10 July 2020 in Science Advances
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Journal Article
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MKMinjae Ku
Minjae Ku
JKJoohee Kim
Joohee Kim
JWJong-Eun Won
Jong-Eun Won
WKWonkyu Kang
Wonkyu Kang
YPYoung-Geun Park
Young-Geun Park
Jang-Ung ParkJang-Ung Park
Jang-Ung Park
This study presents a smart, soft contact lens that provides real-time sensing for the wireless immunosensing of cortisol.

8 April 2020 in ACS Applied Electronic Materials
Verified
Journal Article
Closed access
TLTae Sung Lee
Tae Sung Lee
NLNam Joo Lee
Nam Joo Lee
Haider AbbasHaider Abbas
Haider Abbas
Hyun Ho LeeHyun Ho Lee
Hyun Ho Lee
TYTae-Sik Yoon
Tae-Sik Yoon
CKChi Jung Kang
Chi Jung Kang

4 March 2019 in Applied Physics Letters
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Journal Article
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Haider AbbasHaider Abbas
Haider Abbas
AAAsif Ali
Asif Ali
JJJongwan Jung
Jongwan Jung
QHQuanli Hu
Quanli Hu
MPMi Ra Park
Mi Ra Park
CKChi Jung Kang
Chi Jung Kang
A controllable and reversible transition of volatile and non-volatile resistive switching is presented in Ag/indium-gallium-zinc oxide (IGZO)/manganese oxide (MnO)/Pt bilayer resistive memory devices. The coexistence of volatile and non-volatile switching characteristics was demonstrated by controlling the current compliance during the SET process. With lower current compliance (<50 μA), the formation of an unstable conducting filament presented typical diode-like non-volatile switching. A reversible transition from volatile to non-volatile switching could be obtained by applying a higher current compliance (≥50 μA). Moreover, highly uniform multistate memory characteristics were achieved by modulating the current compliance in the non-volatile switching region. The coexistence of volatile and multistate non-volatile resistive switching behaviors with a reversible transition demonstrates the capability of developing a selector element for crossbar arrays and the application for next generation multistate high-density storage with the same Ag/IGZO/MnO/Pt device.

1 December 2017 in Biosensors and Bioelectronics
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Journal Article
Closed access
YKYo-Han Kim
Yo-Han Kim
KLKyungmin Lee
Kyungmin Lee
HJHunsang Jung
Hunsang Jung
HKHee Kyung Kang
Hee Kyung Kang
JJJihoon Jo
Jihoon Jo
Hyun Ho LeeHyun Ho Lee
Hyun Ho Lee

28 October 2021 in Nanomaterials
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Journal Article
Open access
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SOSeungju Oh
Seungju Oh
HHHyeyeon Hur
Hyeyeon Hur
YKYoonjae Kim
Yoonjae Kim
SSSeongcheol Shin
Seongcheol Shin
HWHyunjeong Woo
Hyunjeong Woo
Hyun Ho LeeHyun Ho Lee
Hyun Ho Lee
Recently, various waste microplastics sensors have been introduced in response to environmental and biological hazards posed by waste microplastics. In particular, the detrimental effects of nano-sized plastics or nanoplastics have been reported to be severe. Moreover, there have been many difficulties for sensing microplastics due to the limited methodologies for selectively recognizing nanoplastics. In this study, a customized gold nanoparticles (Au NPs) based localized surface plasmon resonance (LSPR) system having bio-mimicked peptide probes toward the nanoplastics was demonstrated. The specific determination through the oligo-peptide recognition was accomplished by chemical conjugation both on the LSPR chip’s 40~50 nm Au NPs and sandwiched 5 nm Au NPs, respectively. The peptide probe could selectively bind to polystyrene (PS) nanoplastics in the forms of fragmented debris by cryo-grinding. A simple UV-Vis spectrophotometer was used to identify the LSPR sensing by primarily measuring the absorbance change and shift of absorption peak. The sandwich-binding could increase the LSPR detection sensitivity up to 60% due to consecutive plasmonic effects. In addition, microwave-boiled DI water inside of a styrofoam container was tested for putative PS nanoplastics resource as a real accessible sample. The LSPR system could be a novel protocol overcoming the limitations from conventional nanoplastic detection.

15 October 2018 in Applied Physics Letters
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Journal Article
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DPDaehoon Park
Daehoon Park
PYPaul Yang
Paul Yang
HKHyung Jun Kim
Hyung Jun Kim
KBKeonwon Beom
Keonwon Beom
Hyun Ho LeeHyun Ho Lee
Hyun Ho Lee
TYTae-Sik Yoon
Tae-Sik Yoon
We demonstrate strong, analog, reversible, and nonvolatile memcapacitance in a Si-based MOS (metal-oxide-semiconductor) memcapacitor with an ITO (In-Sn-O)/HfOx/Si structure. Both accumulation and depletion capacitances change sequentially and reversibly upon repeating voltage application with respect to voltage polarity. This memcapacitance is thought to be induced by oxygen ions' migration between ITO and HfOx layers, which changes the HfOx permittivity and the depletion states in Si and ITO. The Si-based memcapacitor has potential to be applied to the gate stack of the MOS field-effect-transistor for nonvolatile memory and synaptic transistors through modulating drain current determined by the capacitance change of the MOS gate stack.