A perfect crystalline phases of cuprous oxide were synthesized using electrochemical method at different duration ( 15, 30 and 60 min). The deposited samples were examined by XRD, SEM, UV–Vis absorption and Mott-Schottky measurements. The effect of the deposition time on the optical and dielectric properties of Cu₂O was studied in detail. The x-ray diffraction indicated increasing of crystallinity and crystallite size with increasing of deposition time. SEM micrographs exhibited grains with three-faced pyramid shape and grains size increased with improvement of crystallinity. Optical study is performed to calculate optical band gap (E_g), absorption coefficient (α), extinction coefficient (k), refractive index (n), dielectric constants (ε), urbach energy (E_U) and optical conductivity (σ_opt) using the transmittance and absorption spectra in the wavelength range of 400–1100 nm. Among all grown samples, the film deposited at 60 min shows interesting optical and dielectric properties. The Mott-Schottky analysis shows that the film deposited at 60 min has a low carrier density compared to samples deposited in other deposition times.

The purpose of this work is to study the influence of the annealing temperature on the structural, morphological, compositional and optical properties of CuSbSe₂ thin films electrodeposited in a single step. CuSbSe₂ thin films were grown on fluorine-doped tin oxide (FTO)/glass substrates using the aqueous electrodeposition technique, then annealed in a tube furnace under nitrogen at temperatures spanning from 250 to 500 °C. The resulting films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis, Raman spectroscopy and UV-Vis spectrophotometer. The annealing temperature plays a fundamental role on the films structural properties; in the range 250–350 °C the formation of pure CuSbSe₂ phase from electrodeposited binary selenides occurs. From 400 to 500 °C, CuSbSe₂ undergoes a preferential phase orientation change, as well as the increasing formation of copper-rich phases such as Cu₃SbSe₃ and Cu₃SbSe₄ due to the partial decomposition of CuSbSe₂ and to the antimony losses.