Present state-of-the-art graphene-based electrodes for supercapacitors remain far from commercial requirements in terms of high energy density. The realization of high energy supercapacitor electrodes remains challenging, because graphene-based electrode materials are synthesized by the chemical modification of graphene. The modified graphene electrodes have lower electrical conductivity than ideal graphene, and limited electrochemically active surface areas due to restacking, which hinders the access of electrolyte ions, resulting in a low energy density. In order to solve the issue of restacking and low electrical conductivity, we introduce thiol-functionalized, nitrogen-doped, reduced graphene oxide scrolls as the electrode materials for an electric double-layer supercapacitor. The fabricated supercapacitor exhibits a very high energy/power density of 206 Wh/kg (59.74 Wh/L)/496 W/kg at a current density of 0.25 A/g, and a high power/energy density of 32 kW/kg (9.8 kW/L)/9.58 Wh/kg at a current density of 50 A/g; it also operates in a voltage range of 0~4 V with excellent cyclic stability of more than 20,000 cycles. By suitably combining the scroll-based electrode and electrolyte material, this study presents a strategy for electrode design for next-generation energy storage devices with high energy density without compromising the power density.

Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiO_xN_y) thin film as a resistive switching layer. A SiO_xN_y layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The SiO_xN_y-based memory device demonstrates bipolar multilevel operation. It can switch interchangeably between all resistance states, including direct SET switching from a high-resistance state (HRS) to an intermediate-resistance state (IRS) or low-resistance state (LRS), direct RESET switching process from LRS to IRS or HRS, and SET/RESET switching from IRS to LRS or HRS by controlling the magnitude of the applied write voltage signal. The device also shows electroforming-free ternary nonvolatile resistive switching characteristics having R_HRS/R_IRS > 10, R_IRS/R_LRS > 5, R_HRS/R_LRS > 10³, and retention over 1.8 × 10⁴ s. The resistive switching mechanism in the devices is found to be combinatory processes of hopping conduction by charge trapping/detrapping in the bulk SiO_xN_y layer and filamentary switching mode at the interface between the SiO_xN_y and Ni layers.