Ji-Hoon Han

Dr. Ji-Hoon Han

Korea University

Research Focus & Metrics

Academic Career Length

7Years (2020-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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17 September 2020 in Nanomaterials
Verified
Journal Article
Open access
PDF file
WSWon Seok Seo
Won Seok Seo
DKDae Ki Kim
Dae Ki Kim
JHJi-Hoon Han
Ji-Hoon Han
KPKang-Bak Park
Kang-Bak Park
SRSu Chak Ryu
Su Chak Ryu
JKJoonhyub Kim
Joonhyub Kim
Monolayer and multilayer molybdenum disulfide (MoS2) materials are semiconductors with direct/indirect bandgaps of 1.2–1.8 eV and are attractive due to their changes in response to electrical, physicochemical, biological, and mechanical factors. Since the desired electrical properties of MoS2 are known, research on its electrical properties has increased, with focus on the deposition and growth of large-area MoS2 and its functionalization. While research on the large-scale production of MoS2 is actively underway, there is a lack of studies on functionalization approaches, which are essential since functional groups can help to dissolve particles or provide adequate reactivity. Strategies for producing films of functionalized MoS2 are rare, and what methods do exist are either complex or inefficient. This work introduces an efficient way to functionalize MoS2. Functional groups are formed on the surface by exposing MoS2 with surface sulfur vacancies generated by plasma treatment to 3-mercaptopropionic acid. This technique can create 1.8 times as many carboxyl groups on the MoS2 surface compared with previously reported strategies. The MoS2-based gas sensor fabricated using the proposed method shows a 2.6 times higher sensitivity and much lower detection limit than the untreated device.

26 May 2020 in Sensors
Verified
Journal Article
Open access
PDF file
JKJoonhyub Kim
Joonhyub Kim
JHJi-Hoon Han
Ji-Hoon Han
CPChan Won Park
Chan Won Park
NMNamki Min
Namki Min
We present a cost-effective approach to produce silicon strain gauges that can withstand very high voltage without using any complex package design and without sacrificing any sensor performance. This is achieved by a special silicon strain gauge structure created on an alkali-free glass substrate that has a high breakdown voltage. A half-bridge silicon strain gauge is designed, fabricated, and then tested to measure its output characteristics. The device has a glass layer that is only 25–55 µm thick; it shows it is able to withstand a voltage of over 2000 V while maintaining a high degree of linearity with correlation coefficients higher than 0.9990 and an average sensitivity of 104.13. Due to their unique electrical properties, silicon strain gauges-on-glass chips hold much promise for use in advanced force and pressure sensors.