Faris Alzahrani

Prof. Faris Alzahrani

orcid

Research Focus & Metrics

Academic Career Length

20Years (2007-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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25 June 2019 in Continuum Mechanics and Thermodynamics
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Journal Article
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FDFrancesco Dell’isola
Francesco Dell’isola
PSPierre Seppecher
Pierre Seppecher
MSMario Spagnuolo
Mario Spagnuolo
EBEmilio Barchiesi
Emilio Barchiesi
FHFrançois Hild
François Hild
THTasawar Hayat
Tasawar Hayat

10 April 2020 in Symmetry
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Journal Article
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AHAatef Hobiny
Aatef Hobiny
FAFaris Alzahrani
Faris Alzahrani
IAIbrahim Abbas
Ibrahim Abbas
Marin MarinMarin Marin
Marin Marin
This work uses the “fractional order bio-heat model” (Fob) model of heat conduction to offer a new interpretation to study the thermal damages in a skin tissue caused by laser irradiation. The influences of fractional order and the thermal relaxation time parameters on the temperature of skin tissue and the resulting thermal damage are studied. In the Laplace domain, the analytical solutions of temperature are obtained. Using the equation of Arrhenius, the resulting thermal injury to the tissues is assessed by the denatured protein ranges. The numerical results of the thermal damages and temperature are presented graphically. A parametric analysis is dedicated to the identifications of suitable procedures for the selection of significant design variables to achieve an effective thermal in the therapy of hyperthermia.

21 May 2020 in Symmetry
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Journal Article
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FAFaris Alzahrani
Faris Alzahrani
AHAatef Hobiny
Aatef Hobiny
IAIbrahim Abbas
Ibrahim Abbas
Marin MarinMarin Marin
Marin Marin
This work is devoted to the investigation of a two-dimensional porous material under weak, strong and normal conductivity, using the eigenvalues method. By using Laplace–Fourier transformations with the eigenvalues technique, the variables are analytically obtained. The derived technique is assessed with numerical results that are obtained from the porous mediums using simplified symmetric geometry. The results, including the displacements, temperature, stresses and the change in the volume fraction field, are offered graphically. Comparisons are made among the outcomes obtained under weak, normal and strong conductivity.

1 October 2019 in Journal of Thermal Biology
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FAFaris Alzahrani
Faris Alzahrani
IAIbrahim Abbas
Ibrahim Abbas

15 April 2020 in Mathematics
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FAFaris Alzahrani
Faris Alzahrani
IAIbrahim Abbas
Ibrahim Abbas
This article highlights the study of photo-thermoelastic interaction in an unbounded semiconductor medium containing a spherical cavity. This problem is solved using the new hyperbolic two-temperature model. The bounding surface of the cavity is traction free and loaded thermally by exponentially decaying pulse boundary heat flux. In addition, the carrier density is prescribed on the inner surface of the cavity in terms of the recombination speed. The techniques of Laplace transforms are used to get the analytical solutions of the problem in the transformed domain by the eigenvalues method. The inversions of Laplace transformations have been carried out numerically. The outcomes also display that the analytical schemes can overcome the mathematical problem to analyze this problem. Numerical outcomes for a semiconductor material are performed and demonstrated graphically. According to the numerical results, this new hyperbolic two-temperature model of thermoelasticity offers finite speed of the thermal wave and mechanical wave propagation.

3 January 2018 in Waves in Random and Complex Media
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Journal Article
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IAIbrahim Abbas
Ibrahim Abbas
FAFaris Alzahrani
Faris Alzahrani
AEAhmed Elaiw
Ahmed Elaiw
The generalized model for plasma, thermal, and elastic waves under dual phase lag model have been applied to determine the carrier density, the displacement, the temperature, and the stresses in a semiconductor medium. Using Laplace transform and the eigenvalue approach methodology, the solutions of all variables have been obtained analytically. A semiconducting material like as silicon was considered. The results were graphically represented to show the different between the dual phase model, Lord and Shulman’s theory and the classical dynamical coupled theory.