Kibog Park

Prof. Kibog Park

orcid

Research Focus & Metrics

Academic Career Length

34Years (1993-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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24 January 2012 in Nature Communications
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JKJinsung Kwak
Jinsung Kwak
JCJae Hwan Chu
Jae Hwan Chu
JCJae-Kyung Choi
Jae-Kyung Choi
SPSoon-Dong Park
Soon-Dong Park
HGHeungseok Go
Heungseok Go
SKSoon-Yong Kwon
Soon-Yong Kwon

5 September 2017 in Journal of Applied Physics
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Journal Article
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SGSusmita Ghose
Susmita Ghose
SRShafiqur Rahman
Shafiqur Rahman
LHLiang Hong
Liang Hong
JRJuan Salvador Rojas-Ramirez
Juan Salvador Rojas-Ramirez
HJHanbyul Jin
Hanbyul Jin
RDRavi Droopad
Ravi Droopad
The growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to oxygen when heated from an iridium crucible in a high temperature effusion cell enabling a lower heat of formation for the growth of Ga2O3, resulting in a more efficient growth process. This source also enabled the growth of crystalline β-Ga2O3 without the need for additional oxygen. The influence of the substrate temperatures on the crystal structure and quality, chemical bonding, surface morphology, and optical properties has been systematically evaluated by x-ray diffraction, scanning transmission electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, spectroscopic ellipsometry, and UV-vis spectroscopy. Under optimized growth conditions, all films exhibited pure 2¯01  oriented β-Ga2O3 thin films with six-fold rotational symmetry when grown on a sapphire substrate. The thin films demonstrated significant absorption in the deep-ultraviolet (UV) region with an optical bandgap around 5.0 eV and a refractive index of 1.9. A deep-UV photodetector fabricated on the high quality β-Ga2O3 thin film exhibits high resistance and small dark current (4.25 nA) with expected photoresponse for 254 nm UV light irradiation suggesting that the material grown using the compound source is a potential candidate for deep-ultraviolet photodetectors.

4 February 2014 in Nature Communications
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DHDuc Tam Ho
Duc Tam Ho
SPSoon-Dong Park
Soon-Dong Park
SKSoon-Yong Kwon
Soon-Yong Kwon
KPKibog Park
Kibog Park
SKSung Youb Kim
Sung Youb Kim

13 November 2017 in npj Flexible Electronics
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JPJihun Park
Jihun Park
SHSanghyun Heo
Sanghyun Heo
KPKibog Park
Kibog Park
MSMyoung Hoon Song
Myoung Hoon Song
JKJu-Young Kim
Ju-Young Kim
FBFranklin Bien
Franklin Bien
Displays represent information visually, so they have become the fundamental building block to visualize the data of current electronics including smartphones. Recently, electronics have been advanced toward flexible and wearable electronics that can be bent, folded, or stretched while maintaining their performance under various deformations. Here, recent advances in research to demonstrate flexible and wearable displays are reviewed. We introduce these results by dividing them into several categories according to the components of the display: active-matrix backplane, touch screen panel, light sources, integrated circuit for fingerprint touch screen panel, and characterization tests; and we also present mechanical tests in nano-meter scale and visual ergonomics research.

25 August 2017 in ACS Nano
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Journal Article
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FUFarman Ullah
Farman Ullah
YSYumin Sim
Yumin Sim
CLChinh Tam Le
Chinh Tam Le
MSMaeng-Je Seong
Maeng-Je Seong
JJJoon Jang
Joon Jang
YKYong Soo Kim
Yong Soo Kim

15 December 2014 in ACS Nano
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Journal Article
Closed access
JCJae-Kyung Choi
Jae-Kyung Choi
JKJinsung Kwak
Jinsung Kwak
SPSoon-Dong Park
Soon-Dong Park
HYHyung Duk Yun
Hyung Duk Yun
SKSe-Yang Kim
Se-Yang Kim
SKSoon-Yong Kwon
Soon-Yong Kwon