Munir Eldesouki

Dr. Munir Eldesouki


Research Focus & Metrics

Academic Career Length

16Years (2011-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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31 January 2011 in IEEE Sensors Journal
Verified
Journal Article
Closed access
MEMunir Eldesouki
Munir Eldesouki
Jamal DeenJamal Deen
Jamal Deen
YHYaser Haddara
Yaser Haddara
OMOgnian Marinov
Ognian Marinov
This work demonstrates the feasibility of using a superharmonic injection-locked oscillator as a power amplifier for short-range, low-power applications. This paper presents two fully integrated, differential superharmonic injection-locked power amplifiers (ILPA) operating at 433 MHz and 2.4 GHz. The two circuits were fabricated in a standard 0.18 μ m CMOS technology. Measurement results of the 2.4 GHz ILPA show a maximum gain of 31 dB from only one stage that occupies a chip area of only 0.6 mm 2 with all components fully integrated. The ILPA delivers an output power of 7.6 dBm from a 1.5 V supply voltage with a power added efficiency of 36%.

7 May 2015 in Sensors
Verified
Journal Article
Open access
PDF file
MEMunir Eldesouki
Munir Eldesouki
Syed Manzoor QasimSyed Manzoor Qasim
Syed Manzoor Qasim
MBMohammed S. Bensaleh
Mohammed S. Bensaleh
Jamal DeenJamal Deen
Jamal Deen
The demand for radio frequency (RF) transceivers operating at 2.4 GHz band has attracted considerable research interest due to the advancement in short range wireless technologies. The performance of RF transceivers depends heavily on the transmitter and receiver front-ends. The receiver front-end is comprised of a low-noise amplifier (LNA) and a downconversion mixer. There are very few designs that focus on connecting the single-ended output LNA to a double-balanced mixer without the use of on-chip transformer, also known as a balun. The objective of designing such a receiver front-end is to achieve high integration and low power consumption. To meet these requirements, we present the design of fully-integrated 2.4 GHz receiver front-end, consisting of a narrow-band LNA and a double balanced mixer without using a balun. Here, the single-ended RF output signal of the LNA is translated into differential signal using an NMOS-PMOS (n-channel metal-oxide-semiconductor, p-channel metal-oxide-semiconductor) transistor differential pair instead of the conventional NMOS-NMOS transistor configuration, for the RF amplification stage of the double-balanced mixer. The proposed receiver circuit fabricated using TSMC 0.18 µm CMOS technology operates at 2.4 GHz and produces an output signal at 300 MHz. The fabricated receiver achieves a gain of 16.3 dB and consumes only 6.74 mW operating at 1.5 V, while utilizing 2.08 mm2 of chip area. Measurement results demonstrate the effectiveness and suitability of the proposed receiver for short-range wireless applications, such as in wireless sensor network (WSN).

2 August 2013 in Sensors
Verified
Journal Article
Open access
PDF file
MEMunir Eldesouki
Munir Eldesouki
Syed Manzoor QasimSyed Manzoor Qasim
Syed Manzoor Qasim
MBMohammed S. Bensaleh
Mohammed S. Bensaleh
Jamal DeenJamal Deen
Jamal Deen
Ultra-low power radio frequency (RF) transceivers used in short-range application such as wireless sensor networks (WSNs) require efficient, reliable and fully integrated transmitter architectures with minimal building blocks. This paper presents the design, implementation and performance evaluation of single-chip, fully integrated 2.4 GHz and 433 MHz RF transmitters using direct-modulation power voltage-controlled oscillators (PVCOs) in addition to a 2.0 GHz phase-locked loop (PLL) based transmitter. All three RF transmitters have been fabricated in a standard mixed-signal CMOS 0.18 µm technology. Measurement results of the 2.4 GHz transmitter show an improvement in drain efficiency from 27% to 36%. The 2.4 GHz and 433 MHz transmitters deliver an output power of 8 dBm with a phase noise of −122 dBc/Hz at 1 MHz offset, while drawing 15.4 mA of current and an output power of 6.5 dBm with a phase noise of −120 dBc/Hz at 1 MHz offset, while drawing 20.8 mA of current from 1.5 V power supplies, respectively. The PLL transmitter delivers an output power of 9 mW with a locking range of 128 MHz and consumes 26 mA from 1.8 V power supply. The experimental results demonstrate that the RF transmitters can be efficiently used in low power WSN applications.

1 December 2015 in Optical Materials
Verified
Journal Article
Closed access
RCR. Chulkov
R. Chulkov
VMV. Markevich
V. Markevich
VOV. Orlovich
V. Orlovich
MEMunir Eldesouki
Munir Eldesouki