A broadband pyro-phototronic effect in vertically grown SnS layers on a Si substrate is proposed, which in turn provides remarkable enhancements in the photoinduced current (370%), responsivity (340%) and detectivity (3960%) at a wavelength of 760 nm and an intensity of 7 mW cm⁻².

A 60-cell photovoltaic (PV) module was analyzed by optimizing the interconnection parameters of the solar cells to enhance the efficiency and increase the power of the PV module setup. The cell-to-module (CTM) losses and gains varied substantially during the various simulation iterations. Optimization was performed to inspect and augment the gain and loss parameters for the 60-cell PV module. The power and efficiency of the module were improved by refining several parameters, such as number of busbars, size of the contact pads, interconnected ribbon width, thickness of the core, and distance between the solar cells and strings, to obtain the maximum efficiency of 21.09%; the CTM efficiency achieved was 94.19% for the proposed strategy related to the common interconnection setup of the ribbon-based system. The CTM efficiency was improved by optimizing the geometrical, optical, and electrical parameters precisely, the power enhancement was up to 325.3 W, and a CTM power of 99.1% was achieved from a standard PV module with rectangular ribbon interconnections.

Recently, selective emitter (SE) technology has attracted renewed attention in the Si solar cell industry to achieve an improved conversion efficiency of passivated-emitter rear-contact (PERC) cells. In this study, we presented a novel technique for the SE formation by controlling the surface morphology of Si wafers. SEs were formed simultaneously, that is, in a single step for the doping process on different surface morphologies, nano/micro-surfaces, which were formed during the texturing processes; in the same doping process, the nano- and micro-structured areas showed different sheet resistances. In addition, the difference in sheet resistance between the heavily doped and shallow emitters could be controlled from almost 0 to 60 Ω/sq by changing the doping process conditions, pre-deposition and driving time, and temperature. Regarding cell fabrication, wafers simultaneously doped in the same tube were used. The sheet resistance of the homogeneously doped-on standard micro-pyramid surface was approximately 82 Ω/sq, and those of the selectively formed nano/micro-surfaces doped on were on 62 and 82 Ω/sq, respectively. As a result, regarding doped-on selectively formed nano/micro-surfaces, SE cells showed a J_SC increase (0.44 mA/cm²) and a fill factor (FF) increase (0.6%) with respect to the homogeneously doped cells on the micro-pyramid surface, resulting in about 0.27% enhanced conversion efficiency.