Hong-Bo Zhou

Prof. Hong-Bo Zhou

Beihang University
orcid

Research Focus & Metrics

Academic Career Length

18Years (2009-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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15 May 2009 in Physical Review B
Verified
Journal Article
Closed access
PDF file
YLYue-Lin Liu
Yue-Lin Liu
YZYing Zhang
Ying Zhang
Hong-Bo ZhouHong-Bo Zhou
Hong-Bo Zhou
GLGuang-Hong Lu
Guang-Hong Lu
FLFeng Liu
Feng Liu
GLG.-N. Luo
G.-N. Luo
We reveal the microscopic vacancy trapping mechanism for H bubble formation in W based on first-principles calculations of the energetics of H-vacancy interaction and the kinetics of H segregation. Vacancy provides an isosurface of optimal charge density that induces collective H binding on its internal surface, a prerequisite for the formation of H2 molecule and nucleation of H bubble inside the vacancy. The critical H density on the vacancy surface before the H2 formation is found to be 1019–1020 H atoms per m2. We believe that such mechanism is generally applicable for H bubble formation in metals and metal alloys.

24 July 2014 in Nuclear Fusion
Verified
Journal Article
Closed access
GLGuang-Hong Lu
Guang-Hong Lu
Hong-Bo ZhouHong-Bo Zhou
Hong-Bo Zhou
CBCharlotte S. Becquart
Charlotte S. Becquart

15 January 2010 in Nuclear Fusion
Verified
Journal Article
Closed access
Hong-Bo ZhouHong-Bo Zhou
Hong-Bo Zhou
YLYue-Lin Liu
Yue-Lin Liu
SJShuo Jin
Shuo Jin
YZYing Zhang
Ying Zhang
GLG.-N. Luo
G.-N. Luo
GLGuang-Hong Lu
Guang-Hong Lu

25 October 2010 in Nuclear Fusion
Verified
Journal Article
Closed access
Hong-Bo ZhouHong-Bo Zhou
Hong-Bo Zhou
YLYue-Lin Liu
Yue-Lin Liu
SJShuo Jin
Shuo Jin
YZYing Zhang
Ying Zhang
GLG.-N. Luo
G.-N. Luo
GLGuang-Hong Lu
Guang-Hong Lu
We investigate the physical origin of H–He interaction in W in terms of optimal charge density by calculating the energetics and diffusion properties using a first-principles method. On the one hand, we show a strong attraction between H and He in W originated from the charge density redistribution due to the presence of He, driving H segregation towards He. This can block the permeation of H into deeper bulk and thus suppress H blistering. On the other hand, we demonstrate that He, rather than H, energetically prefers to occupy the vacancy centre due to its closed-shell structure, which can block H2 formation at the vacancy centre. This is because He causes a redistribution of charge density inside the vacancy to make it ‘not optimal’ for the formation of H2 molecules, which can be treated as a preliminary nucleation of the H bubbles. We thus propose that H retention and blistering in W can be suppressed by doping the noble gas elements.

27 September 2012 in Physical Review Letters
Verified
Journal Article
Open access
PDF file
Hong-Bo ZhouHong-Bo Zhou
Hong-Bo Zhou
SJShuo Jin
Shuo Jin
YZYing Zhang
Ying Zhang
GLGuang-Hong Lu
Guang-Hong Lu
FLFeng Liu
Feng Liu
When an impurity is doped in a solid, it inevitably induces a local stress, tending to expand or contract the lattice. Consequently, strain can be applied to change the solubility of impurity in a solid. Generally, the solubility responds to strain “monotonically,” increasing (decreasing) with the tensile (compressive) strain if the impurity induces a compressive stress or vice versa. Using first-principles calculations, however, we discovered that the H solubility can be enhanced by anisotropic strain in some bcc metals, almost independent of the sign of strain. This anomalous behavior is found to be caused by a continuous change of H location induced by anisotropic strain. Our finding suggests a cascading effect of H bubble formation in bcc metals: the H solution leads to H bubble formation that induces anisotropic strain that in turn enhances H solubility to further facilitate bubble growth.

1 April 2018 in Journal of Nuclear Materials
Verified
Journal Article
Closed access
YCYangchun Chen
Yangchun Chen
YLYu-Hao Li
Yu-Hao Li
NGNing Gao
Ning Gao
Hong-Bo ZhouHong-Bo Zhou
Hong-Bo Zhou
Wangyu HuWangyu Hu
Wangyu Hu
Huiqiu DengHuiqiu Deng
Huiqiu Deng