Karuna Nanda

Prof. Karuna Nanda

Professor

Research Focus & Metrics

Academic Career Length

29Years (1998-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
11 June 2019 in ACS Energy Letters
Verified
Journal Article
Closed access
DSDebasish Sarkar
Debasish Sarkar
DDDebanjan Das
Debanjan Das
SDShyamashis Das
Shyamashis Das
AKAnkit Kumar
Ankit Kumar
SPSatish Patil
Satish Patil
ASAshok K. Shukla
Ashok K. Shukla

24 September 2018 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
DDDebanjan Das
Debanjan Das
SSSaswati Santra
Saswati Santra
Karuna NandaKaruna Nanda
Karuna Nanda


16 January 2017 in Green Chemistry
Verified
Journal Article
Closed access
PDF file
DDDebanjan Das
Debanjan Das
ADAbhinaba Das
Abhinaba Das
MRMeera Reghunath
Meera Reghunath
Karuna NandaKaruna Nanda
Karuna Nanda
A novel one-step, one-pot strategy to synthesize Co 2 P encapsulated N,P dual doped carbon nanotubes (Co 2 P/NPCNTs) is developed via a g-C 3 N 4 intermediated approach.

19 August 2015 in Green Chemistry
Verified
Journal Article
Closed access
PDF file
BBBarun Kumar Barman
Barun Kumar Barman
Karuna NandaKaruna Nanda
Karuna Nanda
Prussian blue (FeIII4[FeII(CN)6]3) is shown to be a unique, single source precursor for the synthesis of Fe/Fe3C encapsulated N-doped graphitic structures and hollow N-doped graphitic nanostructures as bi-functional electrocatalysts for oxygen reduction/oxygen evolution reactions.

9 November 2017 in Scientific Reports
Verified
Journal Article
Open access
PDF file
EMEmma P. Mukhokosi
Emma P. Mukhokosi
SKSaluru B. Krupanidhi
Saluru B. Krupanidhi
Karuna NandaKaruna Nanda
Karuna Nanda
We, for the first time, provide the experimental demonstration on the band gap engineering of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm thick film, the band gap is ~2.04 eV similar to that of monolayer, whereas the band gap is approximately ~1.2 eV similar to that of bulk for the 1200 nm thick film. The variation of the band gap is consistent with the the theoretically predicted layer-dependent band gap of SnSe2. Interestingly, the 400–1200 nm thick films were sensitiveto 1064 nm laser iradiation and the sensitivity increases almost exponentiallly with thickness, while films with 50–140 nm thick are insensitive which is due to the fact that the band gap of thinner films is greater than the energy corresponding to 1064 nm. Over all, our results establish the possibility of engineering the band gap of SnSe2 layered structures by simply controlling the thickness of the film to absorb a wide range of electromagnetic radiation from infra-red to visible range.