Chih-Ming Chen

Prof. Chih-Ming Chen

Department of Chemical Engineering, National Chung Hsing University, Taichung 402, Taiwan
orcid

Research Focus & Metrics

Academic Career Length

29Years (1998-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
1 November 1998 in Journal of Electronic Materials
Verified
Journal Article
Closed access
PDF file
SCSinn-Wen Chen
Sinn-Wen Chen
Chih-Ming ChenChih-Ming Chen
Chih-Ming Chen
WLWen-Chyuarn Liu
Wen-Chyuarn Liu

1 May 2002 in Acta Materialia
Verified
Journal Article
Closed access
Chih-Ming ChenChih-Ming Chen
Chih-Ming Chen
SCS.-W. Chen
S.-W. Chen

1 March 2007 in The Journal of Physical Chemistry C
Verified
Journal Article
Closed access
TWTzu-Chien Wei
Tzu-Chien Wei
CWChi-Chao Wan
Chi-Chao Wan
YWYung-Yun Wang
Yung-Yun Wang
Chih-Ming ChenChih-Ming Chen
Chih-Ming Chen
HSHan-Sheng Shiu
Han-Sheng Shiu

1 July 1999 in Journal of Electronic Materials
Verified
Journal Article
Closed access
PDF file
Chih-Ming ChenChih-Ming Chen
Chih-Ming Chen
SCSinn-Wen Chen
Sinn-Wen Chen

1 April 2006 in Journal of Materials Research
Verified
Journal Article
Closed access
PDF file
LCLong-Tai Chen
Long-Tai Chen
Chih-Ming ChenChih-Ming Chen
Chih-Ming Chen

1 August 2001 in Journal of Applied Physics
Verified
Journal Article
Closed access
PDF file
Chih-Ming ChenChih-Ming Chen
Chih-Ming Chen
SCSinn-Wen Chen
Sinn-Wen Chen
This study investigates the effect of electromigration upon the interfacial reactions between the promising lead-free solders, Sn–Cu and Sn–Ag, with Ni substrate. Sandwich-type reaction couples, Sn–0.7 wt% Cu/Ni/Sn–0.7 wt% Cu and Sn–3.5 wt% Ag/Ni/Sn–3.5 wt% Ag, were reacted at 160, 180, and 200 °C for various lengths of time with and without the passage of electric currents. Without passage of electric currents through the couples, only one intermetallic compound Ni3Sn4 with ∼7 at. % Cu solubility was found at both interfaces of the Sn–0.7 wt% Cu/Ni couples. With the passage of an electric current of 500 A/cm2 density, the Cu6Sn5 phase was formed at the solder/Ni interface besides the Ni3Sn4 phase. Similar to those without the passage of electric currents, only the Ni3Sn4 phase was found at the Ni/solder interface. Directions of movement of electrons, Sn, and Cu atoms are the same at the solder/Ni interface, and the growth rates of the intermetallic layers were enhanced. At the Ni/solder interface, the electrons flow in the opposite direction of the Sn and Cu movement, and the growth rates of the intermetallic layers were retarded. Only the Ni3Sn4 phase was formed from the Sn–3.5 wt% Ag/Ni interfacial reaction with and without the passage of electric currents. Similar to the Sn–0.7 wt% Cu/Ni system, the movement of electrons enhances or retards the growth rates of the intermetallic layers at the solder/Ni and Ni/solder interfaces, respectively. Calculation results show the apparent effective charge za* decreases in magnitude with raising temperatures, which indicates the electromigration effect becomes insignificant at higher temperatures.