Hongfei Jiao

Dr. Hongfei Jiao

School of Physics science and Engineering, Tongji University, Shanghai 200092, China
orcid

Research Focus & Metrics

Academic Career Length

17Years (2010-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
20 March 2019 in Discover Nano
Verified
Journal Article
Open access
PDF file
TSTian Sang
Tian Sang
JGJian Gao
Jian Gao
XYXin Yin
Xin Yin
HQHonglong Qi
Honglong Qi
LWLa Wang
La Wang
Hongfei JiaoHongfei Jiao
Hongfei Jiao
An angle-insensitive broadband absorber of graphene covering the whole visible spectrum is numerically demonstrated, which is resulted from multiple couplings of the electric and magnetic dipole resonances in the narrow metallic grooves. This is achieved by integrating the graphene sheet with a multi-grooved metasurface separated by a polymethyl methacrylate (PMMA) spacer, and an average absorption efficiency of 71.1% can be realized in the spectral range from 450 to 800 nm. The location of the absorption peak of graphene can be tuned by the groove depth, and the bandwidth of absorption can be flexibly controlled by tailoring both the number and the depth of the groove. In addition, broadband light absorption enhancement of graphene is robust to the variations of the structure parameters, and good absorption properties can be maintained even the incident angle is increased to 60°.

19 August 2020 in Nanomaterials
Verified
Journal Article
Open access
PDF file
TSTian Sang
Tian Sang
HQHonglong Qi
Honglong Qi
XWXun Wang
Xun Wang
XYXin Yin
Xin Yin
GLGuoqing Li
Guoqing Li
Hongfei JiaoHongfei Jiao
Hongfei Jiao
Broadband metamaterial absorbers (MAs) are critical for applications of photonic and optoelectronic devices. Despite long-standing efforts on broadband MAs, it has been challenging to achieve ultrabroadband absorption with high absorptivity and omnidirectional characteristics within a comparatively simple and low-cost architecture. Here we design, fabricate, and characterize a novel compact Cr-based MA to achieve ultrabroadband absorption in the visible to near-infrared wavelength region. The Cr-based MA consists of Cr nanorods and Cr substrate sandwiched by three pairs of SiO2/Cr stacks. Both simulated and experimental results show that an average absorption over 93.7% can be achieved in the range of 400–1000 nm. Specifically, the ultrabroadband features result from the co-excitations of localized surface plasmon (LSP) and propagating surface plasmon (PSP) and their synergistic absorption effects, where absorption in the shorter and longer wavelengths are mainly contributed bythe LSP and PSP modes, respectively. The Cr-based MA is very robust to variations of the geometrical parameters, and angle-and polarization-insensitive absorption can be operated well over a large range of anglesunder both transverse magnetic(TM)- and transverse electric (TE)-polarized light illumination.

13 September 2021 in Optics Express
Verified
Journal Article
Closed access
FLFei Liu
Fei Liu
Hongfei JiaoHongfei Jiao
Hongfei Jiao
JZJinlong Zhang
Jinlong Zhang
BYBin Yin
Bin Yin
HLHuasong Liu
Huasong Liu
XCXinbin Cheng
Xinbin Cheng
Antireflection sub-wavelength structures (SWSs) on ZnS were designed and ZnS SWSs with HfO2 protective film were prepared, and their properties in long-wave infrared applications were examined and compared to AR coatings. The SWS has good antireflection performance and exhibits less polarization sensitivity than the AR coating. At temperatures above 500 °C, the SWS with HfO2 protective film has a better thermal endurance property than the multilayer AR coating. Moreover, the HfO2 protective film significantly improved the mechanical properties of the ZnS SWS and was similar to HfO2 covered AR coating when the HfO2 film was not broken. This study shows that the ZnS SWS with HfO2 protective film has promising application prospects in infrared optical windows.

12 December 2018 in Optical Engineering
Verified
Journal Article
Open access
JZJinlong Zhang
Jinlong Zhang
Hongfei JiaoHongfei Jiao
Hongfei Jiao
BMBin Ma
Bin Ma
ZWZhanshan Wang
Zhanshan Wang
XCXinbin Cheng
Xinbin Cheng
The flagship monthly journal of SPIE, Optical Engineering (OE) publishes peer-reviewed papers reporting on research and development in all areas of optics, photonics, and imaging science and engineering.

15 February 2011 in Optics Express
Verified
Journal Article
Closed access
PDF file
Hongfei JiaoHongfei Jiao
Hongfei Jiao
TDTao Ding
Tao Ding
QZQian Zhang
Qian Zhang
A comparative study of laser induced damage of HfO2/SiO2 and TiO2/SiO2 mirrors at 1064 nm has been carried out. One TiO2/SiO2 mirror with absorption of 300 ppm and two HfO2/SiO2 mirrors with absorption of 40 and 4.5 ppm were fabricated using electron beam evaporation method. For r-on-1 test, all HfO2/SiO2 mirrors with low average absorption are above 150 J/cm2 at 10ns. However, the TiO2/SiO2 mirrors with high average absorption are just 9.5 J/cm2, which are probably due to the rather high absorption and rather low band gap energy. Meanwhile, all the samples were irradiated from front and back side respectively using the raster scan test mode. In case of front side irradiation, it is found that: for TiO2/SiO2 high reflectors, the representative damage morphologies are shallow pits that were probably caused by absorbing centers. However, for HfO2/SiO2 high reflectors, the dominant damage morphologies are micrometer-sized nodules ejected pits and the delamination initiating from the pits. The absorption of HfO2/SiO2 coatings is low enough to have minor influence on the laser damage resistance. In case of backside irradiation, the morphology of TiO2/SiO2 mirrors is mainly center melted pits that are thermal melting induced damage. Meanwhile, HfO2/SiO2 mirrors with isometrical fracture rings damage morphology are thermal induced stress damage.

2 March 2020 in IEEE Photonics Journal
Verified
Journal Article
Open access
TSTian Sang
Tian Sang
XYXin Yin
Xin Yin
HQHonglong Qi
Honglong Qi
JGJian Gao
Jian Gao
XNXinshang Niu
Xinshang Niu
Hongfei JiaoHongfei Jiao
Hongfei Jiao