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A change in the macroplastic deformation rate and an increase in the travel distances of edge dislocations are observed in NaCl single crystals placed in crossed dc and rf magnetic fields. The magnetic-field frequencies at which softening maxima are observed correspond to the resonance frequencies of transitions between Zeeman sublevels in paramagnetic complexes of structural defects.

A mechanism for the depinning of dislocations pinned by a stopper is formulated. This mechanism includes the transfer of an electron from a dislocation to the stopper and the appearance of a spin two-electron nanoreactor that has no Coulomb interaction that would hold the dislocation at the stopper in the initial state. The spin dynamics in the nanoreactor is controlled by a magnetic field; therefore, it causes magnetoplasticity and short-term magnetic memory. Another origin of magnetoplasticity is the aggregation of diffusing paramagnetic ions (stoppers) into dimers, trimers, and clusters; this aggregation is also spin-selective and magnetically sensitive. The magnetic-field dependence of the structural evolution of the stoppers provides long-term magnetic memory in diamagnetic solids. Both mechanisms of magnetoplasticity and magnetic memory can coexist and be independent of or dependent on each other.

A microwave magnetic field crossed with a static field was found to exert a resonance effect on the dislocation mobility in single crystals of p-type silicon. The frequency of alternating field and the magnitude of static magnetic field corresponding to the maximal crystal hardening satisfy conditions for EPR of structural defects. This is evidence that the primary elementary processes observed previously in magnetoplasticity effects (influence of a static magnetic field on plasticity) are spin-dependent in silicon crystals. The dislocation path detected EPR spectrum was found to be anisotropic.