In this paper an IGZO-TFT based on High-K gate dielectric is simulated using TCAD software. We report on the electrical properties of amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) with a range of oxides (SiO ₂ , HfO ₂ , ZrO ₂ , Al ₂ O ₃ or TiO ₂ ) gate dielectrics materials IGZO-TFT with TiO ₂ layer dielectric exhibited threshold voltage V _th of 2 V, a Saturation mobility μ _sat of 4.51 cm ² /Vs, Subthreshold swing SS of 0.075 V/dec, and a current ratio I _on /I _off of 1.244E13. These characteristics make it suitable for use as a switching transistor in low-power application, furthermore a temperature-dependent transfer characteristic of the a-IGZO TFT, ranging from 300 to 500 k. show that more the dielectric constant of the oxide gate dielectric is high, more we get a high current.

This work presents a novel compact Ultra-wideband (UWB) band-pass filter (BPF) based on a hybrid technique using a short-circuited stub and a DGS (Defected Ground Structure) transition. The proposed bandpass filter characterizes by a compact size of 22 X 16.5 mm2, and it is mounted on a FR-4 substrate with a thickness of 0.8 mm. A study of the electrical equivalent circuit of the proposed BPF was carried out. Simulation results show a bandwidth range from 4 up to 17 GHz with a return loss of more than 12 dB, insertion loss of less than 2 dB, and a group delay of about 0.25ns.