A new low-temperature all-solution approach was invented to produce perovskite solar cells with an efficiency of 15.4% at high device yield.

We report the observation of self-doping in perovskite. CH₃NH₃PbI₃ was found to be either n- or p-doped by changing the ratio of methylammonium halide (MAI) and lead iodine (PbI₂) which are the two precursors for perovskite formation. MAI-rich and PbI₂-rich perovskite films are p and n self-doped, respectively. Thermal annealing can convert the p-type perovskite to n-type by removing MAI. The carrier concentration varied as much as six orders of magnitude. A clear correlation between doping level and device performance was also observed.