The two-photon absorption coefficient and Kerr coefficient of bulk crystalline silicon are determined near the telecommunication wavelengths of 1.3 and 1.55 μm using femtosecond pulses and a balanced Z-scan technique. A phase shift sensitivity of the order of 1 mrad is achieved, enabling the accurate measurement of third-order nonlinear coefficients at fluences smaller than 100 μJ/cm2. From the two-photon absorption coefficient (β∼0.8 cm/GW) and the Kerr coefficient (n2∼4×10−14 cm2/W) at a wavelength λ=1.54 μm, a value F∼0.35 for the nonlinear figure of merit for all-optical switching is determined.
Einstein Telescope (ET) is the European project for a gravitational-wave (GW) observatory of third-generation. In this paper we present a comprehensive discussion of its science objectives, providing state-of-the-art predictions for the capabilities of ET in both geometries currently under consideration, a single-site triangular configuration or two L-shaped detectors. We discuss the impact that ET will have on domains as broad and diverse as fundamental physics, cosmology, early Universe, astrophysics of compact objects, physics of matter in extreme conditions, and dynamics of stellar collapse. We discuss how the study of extreme astrophysical events will be enhanced by multi-messenger observations. We highlight the ET synergies with ground-based and space-borne GW observatories, including multi-band investigations of the same sources, improved parameter estimation, and complementary information on astrophysical or cosmological mechanisms obtained combining observations from different frequency bands. We present advancements in waveform modeling dedicated to third-generation observatories, along with open tools developed within the ET Collaboration for assessing the scientific potentials of different detector configurations. We finally discuss the data analysis challenges posed by third-generation observatories, which will enable access to large populations of sources and provide unprecedented precision.
Metal-halide perovskite solar cells rival the best inorganic solar cells in power conversion efficiency, providing the outlook for efficient, cheap devices. In order for the technology to mature and approach the ideal Shockley-Queissier efficiency, experimental tools are needed to diagnose what processes limit performances, beyond simply measuring electrical characteristics often affected by parasitic effects and difficult to interpret. Here we study the microscopic origin of recombination currents causing photoconversion losses with an all-optical technique, measuring the electron-hole free energy as a function of the exciting light intensity. Our method allows assessing the ideality factor and breaks down the electron-hole recombination current into bulk defect and interface contributions, providing an estimate of the limit photoconversion efficiency, without any real charge current flowing through the device. We identify Shockley-Read-Hall recombination as the main decay process in insulated perovskite layers and quantify the additional performance degradation due to interface recombination in heterojunctions.