Determining the metallicity and semiconductivity of a multi-walled carbon nanotube (MWCNT) bundle plays a particularly vital role in its interconnection with the metal electrode of an integrated circuit. In this paper, an effective method is proposed to determine the electrical transport properties of an MWCNT bundle using a current–voltage characteristic curve during its electrical breakdown. We established the reliable electrical nanoscale contact between the MWCNT bundle and metal electrode using a robotic manipulation system under scanning electron microscope (SEM) vacuum conditions. The experimental results show that the current–voltage curve appears as saw-tooth-like current changes including up and down steps, which signify the conductance and breakdown of carbon shells in the MWCNT bundle, respectively. Additionally, the power law nonlinear behavior of the current–voltage curve indicates that the MWCNT bundle is semiconducting. The molecular dynamics simulation explains that the electron transport between the inner carbon shells, between the outermost carbon shells and gold metal electrode and between the outermost carbons shells of two adjacent individual three-walled carbon nanotubes (TWCNTs) is through their radial deformation. Density functional theory (DFT) calculations elucidate the electron transport mechanism between the gold surface and double-wall carbon nanotube (DWCNT) and between the inner and outermost carbon shells of DWCNT using the charge density difference, electrostatic potential and partial density of states.

Reconfigurable radio frequency (RF) attenuators are critical passive components for 5G-Advanced and emerging 6G wireless systems. Conventional tunable attenuators rely on solid-state switches combined with fixed resistor networks, which suffer from unavoidable static power consumption and severe parasitic degradation at high frequencies. Here, we systematically demonstrate HfO₂-based non-volatile memristors as RF switches with tunable ON-state resistance (R_ON), enabling a switching-attenuation-integrated multistate attenuator. The fabricated Au/HfO₂/Ag devices exhibit stable bipolar resistive switching with an ON/OFF ratio exceeding 10⁹, reliable retention of 10⁵ s, and programmable R_ON continuously tuned from 5.8 Ω to 197.5 Ω. On-wafer RF characterizations from 10 MHz to 43.5 GHz reveal low insertion loss (−0.53 dB), high isolation (−26.8 dB), and clear scaling laws governing the effects of device geometry and R_ON on RF performance. Leveraging these unique characteristics, we propose a symmetric π-type programmable all-memristor attenuator architecture with a cascaded 2-unit configuration. The design achieves 12 discrete attenuation levels from 2 dB to 24 dB, a return loss better than 10 dB across the full band, and zero static power consumption without additional passive components or bias networks. This work establishes the fundamental material-device-RF performance relationship in HfO₂-based RF switches and provides a compact, low-power, and highly integrable solution for next-generation reconfigurable RF front-ends.