The microwave cutoff probe (CP) is an accurate diagnostic technique to measure absolute electron density even in processing gas plasmas. Because this technique needs the installation of two probe tips and a probe body in the plasma chamber, it may cause plasma perturbation in semiconductor plasma processing; this may increase the uncertainty of the measured value. In this work, a flat CP, which is embedded in the substrate chuck or chamber wall, is proposed to measure electron density without plasma perturbation and to monitor processing plasma in real-time. We first evaluated the performance of various types of flat CPs, such as the point CP, ring CP, and bar cutoff probe (BCP), through electromagnetic (EM) field simulation. The BCP showed better performance with clearer cut-off signal characteristics and minimization of noise signals compared with the other probe types. Therefore, we focused on the characteristics of the BCP through experiments and/or EM simulations and concluded the followings: (i) the measured electron densities of the BCP agree well with those of the conventional CP; (ii) the BCP measures the plasma density near the plasma-sheath boundary layer, which is very closely adjacent to the chamber wall or wafer; (iii) it was demonstrated for the first time that the plasma density can be measured, even though the processing wafers such as un-doped silicon, P type silicon, amorphous carbon, or amorphous carbon/SiO₂ patterned wafers were placed on the flat CP; and (iv) we performed real-time measurements of the electron density using the BCP covered with the wafers in plasmas with various process gases, such as Ar, NF₃, and O₂. These results indicate that the chuck-embed-type or wall-type flat CP can be used as a real-time electron density measurement (monitoring) tool during industrial plasma processing, such as during etching, deposition, sputtering or implantation, and the chuck-embed-type flat CP can measure the plasma density impinging on the wafer in real-time without stopping the processing.

Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight into previously observed phenomena, SiO₂ etching characteristics were investigated under various pulsed plasma conditions and analyzed through plasma diagnostics. Specifically, the disappearance of micro-trenching from the use of pulse-modulated plasma is analyzed via self-bias, and the phenomenon that as power off-time increases, the sidewall angle increases is interpreted via radical species density and self-bias. Further, the change from etching to deposition with decreased peak power during processing is understood via self-bias and electron density. It is expected that this research will provide an informative window for the optimization of SiO₂ etching and for basic processing databases including plasma diagnosis for advanced plasma processing simulators.

A microwave probe is known to be a suitable method to measure plasma density, even in the processing condition and is widely used in various environments of low-temperature processing plasmas. Various types of microwave probes have been researched and developed to measure the precise plasma density. Extensive research has been conducted to investigate each probes characteristic responding to the plasma parameters (plasma density, electron temperature, pressure, sheath width, and so forth) based on both experiments and simulations. However, a comparative study elucidating the relative characteristics of each probe has not been completed yet, despite the wide applications of the probes in processing plasma. We conduct a comparative study among the microwave probes using the numerical method of three-dimensional finite-difference time-domain simulation. In this study, the microwave probes are compared by investigating the precision of plasma density measurement under a comprehensive range of plasma parameters (plasma density, pressure, and sheath width).

As collisions between electrons and neutral particles constitute one of the most representative physical phenomena in weakly ionized plasma, the electron-neutral (e-n) collision frequency is a very important plasma parameter as regards understanding the physics of this material. In this paper, we measured the e-n collision frequency in the plasma using a calibrated cutoff-probe. A highly accurate reactance spectrum of the plasma/cutoff-probe system, which is expected based on previous cutoff-probe circuit simulations [Kim et al., Appl. Phys. Lett. 99, 131502 (2011)], is obtained using the calibrated cutoff-probe method, and the e-n collision frequency is calculated based on the cutoff-probe circuit model together with the high-frequency conductance model. The measured e-n collision frequency (by the calibrated cutoff-probe method) is compared and analyzed with that obtained using a Langmuir probe, with the latter being calculated from the measured electron-energy distribution functions, in wide range of gas pressure.

In Ho Seong , Jang Jae Lee , Chul Hee Cho , Yeong Seok Lee, Si Jun Kim , and Shin Jae You. Applied Science and Convergence Technology 2021;30:176-82. https://doi.org/10.5757/ASCT.2021.30.6.176

Recently, the uniformity in the wafer edge area that is normally abandoned in the fabrication process has become important for improving the process yield. The wafer edge structure normally has a difference of height between wafer and electrode, which can result in a sheath bend, distorting important parameters of the etch, such as ionic properties, resulting in nonuniform etching. This problem nowadays is resolved by introducing the supplemented structure called a focus ring on the periphery of the wafer. However, the focus ring is known to be easily eroded by the bombardment of high-energy ions, resulting in etch nonuniformity again, so that the focus ring is a consumable part and must be replaced periodically. Because of this issue, there are many simulation studies being conducted on the correlation between the sheath structural characteristics and materials of focus rings to find the replacement period, but the experimental data and an analysis based on this are not sufficient yet. In this study, in order to experimentally investigate the etching characteristics of the wafer edge area according to the sheath structure of the wafer edge, the etching was performed by increasing the wafer height (thickness) in the wafer edge area. The result shows that the degree of tilt in the etch profile at the wafer edge and the area where the tilt is observed severely are increased with the height difference between the wafer and electrode. This study is expected to provide a database for the characteristics of the etching at the wafer edge and useful information regarding the tolerance of the height difference for untilted etch profile and the replacement period of the etch ring.