AHAITOUF ALI

Prof. Dr. AHAITOUF ALI

Université Sidi Mohamed Ben Abdellah, Faculté des Sciebces et Techniques, Laboratoire Systèmes Intelligents, Géoressources et Énergies Renouvelables (LSIGER), BP. 2202 Fès MAROC
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Research Focus & Metrics

Academic Career Length

11Years (2016-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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9 September 2023 in Expert Systems with Applications
Verified
Journal Article
Closed access
ALAbdelaziz Lberni
Abdelaziz Lberni
MMMalika Alami Marktani
Malika Alami Marktani
AAAbdelaziz Ahaitouf
Abdelaziz Ahaitouf
AAAHAITOUF ALI
AHAITOUF ALI

15 January 2021 in Nanomaterials
Verified
Journal Article
Open access
PDF file
Adama MballoAdama Mballo
Adama Mballo
ASAshutosh Srivastava
Ashutosh Srivastava
SSSuresh Sundaram
Suresh Sundaram
PVPhuong Vuong
Phuong Vuong
SKSoufiane Karrakchou
Soufiane Karrakchou
AOAbdallah Ougazzaden
Abdallah Ougazzaden
Reliable p-doped hexagonal boron nitride (h-BN) could enable wide bandgap optoelectronic devices such as deep ultra-violet light emitting diodes (UV LEDs), solar blind photodiodes and neutron detectors. We report the study of Mg in h-BN layers as well as Mg h-BN/AlGaN heterostructures. Mg incorporation in h-BN was studied under different biscyclopentadienyl-magnesium (Cp2Mg) molar flow rates. 2θ-ω x-ray diffraction scans clearly evidence a single peak, corresponding to the (002) reflection plane of h-BN with a full-width half maximum increasing with Mg incorporation in h-BN. For a large range of Cp2Mg molar flow rates, the surface of Mg doped h-BN layers exhibited characteristic pleats, confirming that Mg doped h-BN remains layered. Secondary ion mass spectrometry analysis showed Mg incorporation, up to 4 × 1018 /cm3 in h-BN. Electrical conductivity of Mg h-BN increased with increased Mg-doping. Heterostructures of Mg h-BN grown on n-type Al rich AlGaN (58% Al content) were made with the intent of forming a p-n heterojunction. The I-V characteristics revealed rectifying behavior for temperatures from 123 to 423 K. Under ultraviolet illumination, photocurrent was generated, as is typical for p-n diodes. C-V measurements evidence a built-in potential of 3.89 V. These encouraging results can indicate p-type behavior, opening a pathway for a new class of wide bandgap p-type layers.

2 November 2020 in Energies
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Journal Article
Open access
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SHSARAH EL HIMER
SARAH EL HIMER
SASalima El Ayane
Salima El Ayane
SYSara El Yahyaoui
Sara El Yahyaoui
JSJean Salvestrini
Jean Salvestrini
AAAHAITOUF ALI
AHAITOUF ALI
Concentrator Photovoltaic (CPV) technology, by using efficient optical elements, small sizes and high efficiency multi-junction solar cells, can be seen as a bright energy source to produce more cost-effective electricity. The main and basic idea is to replace the use of expensive solar cells with less expensive optical elements made from different materials. This paper aims to give to the readers a rapid and concise overview of CPV and the main characteristics to be considered when designing a CPV system. It reviews the main optical configurations presented in the literature, their advantages and drawbacks, as well as the recent progress in the concentration ratio and the major performances achieved in the field. The paper considers the more recent works, their optical designs, as well as their optical and electrical performances. It also relates the major achievements on the industrial side with the major milestones in CPV developments.

1 July 2021 in Microelectronics Journal
Verified
Journal Article
Closed access
ALAbdelaziz Lberni
Abdelaziz Lberni
MMMalika Alami Marktani
Malika Alami Marktani
AAAbdelaziz Ahaitouf
Abdelaziz Ahaitouf
AAAHAITOUF ALI
AHAITOUF ALI

8 June 2021 in ACS Applied Electronic Materials
Verified
Journal Article
Open access
SKSoufiane Karrakchou
Soufiane Karrakchou
SSSuresh Sundaram
Suresh Sundaram
RGRajat Gujrati
Rajat Gujrati
PVPhuong Vuong
Phuong Vuong
Adama MballoAdama Mballo
Adama Mballo
AOAbdallah Ougazzaden
Abdallah Ougazzaden
We demonstrate the fabrication of vertical InGaN light-emitting diodes (LEDs) on large-area free-standing membranes, using a mechanical lift-off technique enabled by 2D h-BN. 30 μm-thick electroplated copper deposited on the epilayer (i) gives rigidity to the structure, preventing crack generation, (ii) functions as a back mirror and as a heat sink, and (iii) enables one-step self-lift-off and transfer of LED structures from h-BN/sapphire during a thermal treatment at 100 °C. Free-standing arrays of LEDs on thick membranes were processed and their electro-optical performance was characterized. This approach can provide a solution for the fabrication of low-cost, wafer scale, crack-free, and highly reproducible free-standing arrays of vertical LEDs with up to centimeter-size areas.

9 September 2020
Verified
Book Chapter
Open access
PDF file
SGSouhail Guennouni
Souhail Guennouni
AMAnass Mansouri
Anass Mansouri
AAAHAITOUF ALI
AHAITOUF ALI
Nowadays, we are talking more and more about insecurity in various sectors as well as the computer techniques to be implemented to counter this trend: access control to computers, e-commerce, banking, etc. There are two traditional ways of identifying an individual. The first method is a knowledge-based method. It is based on the knowledge of an individual’s information such as the PIN code to allow him/her to activate a mobile phone. The second method is based on the possession of token. It can be a piece of identification, a key, a badge, etc. These two methods of identification can be used in a complementary way to obtain increased security like in bank cards. However, they each have their weaknesses. In the first case, the password can be forgotten or guessed by a third party. In the second case, the badge (or ID or key) may be lost or stolen. Biometric features are an alternative solution to the two previous identification modes. The advantage of using the biometric features is that they are all universal, measurable, unique, and permanent. The interest of applications using biometrics can be summed up in two classes: to facilitate the way of life and to avoid fraud.