Jerry R. Meyer

Dr. Jerry R. Meyer


Research Focus & Metrics

Academic Career Length

36Years (1991-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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15 September 2020 in Photonics
Verified
Journal Article
Open access
PDF file
JMJerry R. Meyer
Jerry R. Meyer
WBWilliam W. Bewley
William W. Bewley
CCChadwick L. Canedy
Chadwick L. Canedy
CKChul Soo Kim
Chul Soo Kim
MKMijin Kim
Mijin Kim
IVIgor Vurgaftman
Igor Vurgaftman
We review the history, development, design principles, experimental operating characteristics, and specialized architectures of interband cascade lasers for the mid-wave infrared spectral region. We discuss the present understanding of the mechanisms limiting the ICL performance and provide a perspective on the potential for future improvements. Such device properties as the threshold current and power densities, continuous-wave output power, and wall-plug efficiency are compared with those of the quantum cascade laser. Newer device classes such as ICL frequency combs, interband cascade vertical-cavity surface-emitting lasers, interband cascade LEDs, interband cascade detectors, and integrated ICLs are reviewed for the first time.

24 April 2017 in IEEE Journal of Selected Topics in Quantum Electronics
Verified
Journal Article
Closed access
ASAlexander Spott
Alexander Spott
ESEric Stanton
Eric Stanton
NVNicolas Volet
Nicolas Volet
JPJonathan D. Peters
Jonathan D. Peters
JMJerry R. Meyer
Jerry R. Meyer
John BowersJohn Bowers
John Bowers
Heterogeneous integration enables the construction of silicon (Si) photonic systems, which are fully integrated with a range of passive and active elements including lasers and detectors. Numerous advancements in recent years have shown that heterogeneous Si platforms can be extended beyond near-infrared telecommunication wavelengths to the mid-infrared (MIR) (2-20 μm) regime. These wavelengths hold potential for an extensive range of sensing applications and the necessary components for fully integrated heterogeneous MIR Si photonic technologies have now been demonstrated. However, due to the broad wavelength range and the diverse assortment of MIR technologies, the optimal platform for each specific application is unclear. Here, we overview Si photonic waveguide platforms and lasers at the MIR, including quantum cascade lasers on Si. We also discuss progress toward building an integrated multispectral source, which can be constructed by wavelength beam combining the outputs from multiple lasers with arrayed waveguide gratings and duplexing adiabatic couplers.

26 January 2007
Verified
Book Chapter
Closed access
PDF file
IVIgor Vurgaftman
Igor Vurgaftman
JMJerry R. Meyer
Jerry R. Meyer

9 June 2007 in Journal of Electronic Materials
Verified
Journal Article
Closed access
PDF file
CCC.L. Canedy
C.L. Canedy
EAE.H. Aifer
E.H. Aifer
IVI. Vurgaftman
I. Vurgaftman
JTJ.G. Tischler
J.G. Tischler
JMJerry R. Meyer
Jerry R. Meyer
EJE.M. Jackson
E.M. Jackson

12 July 2021 in IEEE Journal of Quantum Electronics
Verified
Journal Article
Open access
JMJerry R. Meyer
Jerry R. Meyer
CCChadwick L. Canedy
Chadwick L. Canedy
MKMijin Kim
Mijin Kim
CKChul Soo Kima
Chul Soo Kima
CMCharles D. Merritt
Charles D. Merritt
IVIgor Vurgaftman
Igor Vurgaftman
We perform a detailed comparison of 2D Auger coefficients in narrow-gap type-I and type-II quantum wells (T1QWs and T2QWs), and the relative effects of Auger non-radiative decay on midwave infrared lasers employing both types of gain media. Comparison is also made to 3D Auger coefficients in bulk mid-IR materials, by defining a “normalization length” that accounts for the spatial extent of the electron and hole wavefunctions in the quantum wells. The comparisons confirm that Auger recombination in both types of QW is substantially suppressed relative to bulk, due primarily to the effects of compressive strain on the valence band dispersions. We find that the 2D Auger coefficients in T1QWs remain substantially lower than those in T2QWs out to wavelengths beyond 3.5 μm. However, this does not necessarily imply a lower lasing threshold because a substantial fraction of the holes injected into T1QWs occupy lower subbands that do not contribute gain, so more must be injected to reach the lasing threshold. When all of the relevant considerations are combined, the thresholds for the best T1QW and T2QW lasers cross over near λ ≈ 3.0 μm. Other characteristics governing the relative T1QW and T2QW laser performances above threshold, such as maximum output power and wallplug efficiency, are also considered.

17 January 2012 in IEEE Journal of Photovoltaics
Verified
Journal Article
Closed access
NCN. L. A. Chan
N. L. A. Chan
NEN. J. Ekins-Daukes
N. J. Ekins-Daukes
JAJ. G. J. Adams
J. G. J. Adams
MLM. P. Lumb
M. P. Lumb
MGM. Gonzalez
M. Gonzalez
RWR. J. Walters
R. J. Walters
The balance of photogeneration and recombination gives rise to an optimum bandgap for any solar cell. The radiative limit represents the lowest permissible level of recombination in a solar cell and, therefore, places an upper limit on the voltage that can be attained. Introducing additional nonradiative recombination results in a loss in voltage that can only be compensated for by moving to higher bandgaps. Consequently, the optimal bandgap for solar energy conversion will rise with increasing nonradiative recombination rate. This balance was recognized by Shockley and Queisser for single-junction solar cells and is here extended to multijunction solar cells. A rise in optimal bandgaps has been observed in simulated single-, double-, and triple-junction devices as nonradiative recombination increases. Optimal bandgaps between excellent and poor diode quality devices are shown to differ by 100s of meV under 1-sun illumination with both terrestrial and extraterrestrial spectra but exhibit no significant change at high concentration due to the dominance of the radiative component in the recombination dynamics.