Miniaturized integrated spectrometers will have unprecedented impact on applications ranging from unmanned aerial vehicles to mobile phones, and silicon photonics promises to deliver compact, cost-effective devices. Mirroring its ubiquitous free-space counterpart, a silicon photonics-based Fourier transform spectrometer (Si-FTS) can bring broadband operation and fine resolution to the chip scale. Here we present the modeling and experimental demonstration of a thermally tuned Si-FTS accounting for dispersion, thermo-optic non-linearity, and thermal expansion. We show how these effects modify the relation between the spectrum and interferogram of a light source and we develop a quantitative correction procedure through calibration with a tunable laser. We retrieve a broadband spectrum (7 THz around 193.4 THz with 0.38-THz resolution consuming 2.5 W per heater) and demonstrate the Si-FTS resilience to fabrication variations—a major advantage for large-scale manufacturing. Providing design flexibility and robustness, the Si-FTS is poised to become a fundamental building block for on-chip spectroscopy.
Electrically driven subwavelength scale metallo-dielectric pedestal pillar lasers are designed and experimentally demonstrated. The metallo-dielectric cavity significantly enhances the quality factor (Q > 1500) of the wavelength and subwavelength scale lasers and the pedestal structure significantly reduces the threshold gain (< 400 cm−1) which can potentially enable laser operation at room temperature. We observed continuous wave lasing in 750 nm gain core radius laser at temperatures between 77 K and 140 K with a threshold current of 50 μA (at 77 K). We also observed lasing from a 355 nm gain core radius laser at temperatures between 77 K and 100 K.
When engineered on scales much smaller than the operating wavelength, metal-semiconductor nanostructures exhibit properties unobtainable in nature. Namely, a uniaxial optical metamaterial described by a hyperbolic dispersion relation can simultaneously behave as a reflective metal and an absorptive or emissive semiconductor for electromagnetic waves with orthogonal linear polarization states. Using an unconventional multilayer architecture, we demonstrate luminescent hyperbolic metasurfaces, wherein distributed semiconducting quantum wells display extreme absorption and emission polarization anisotropy. Through normally incident micro-photoluminescence measurements, we observe absorption anisotropies greater than a factor of 10 and degree-of-linear polarization of emission >0.9. We observe the modification of emission spectra and, by incorporating wavelength-scale gratings, show a controlled reduction of polarization anisotropy. We verify hyperbolic dispersion with numerical simulations that model the metasurface as a composite nanoscale structure and according to the effective medium approximation. Finally, we experimentally demonstrate >350% emission intensity enhancement relative to the bare semiconducting quantum wells.
The quest for an integrated light source that promises high energy efficiency and a fast modulation for high-performance photonic circuits has led to the development of room-temperature telecom-wavelength nanoscale lasers with a high spontaneous emission factor . The coherence characterization of this type of laser using the conventional measurement of output light intensity versus input pump intensity is inherently difficult due to the diminishing kink in the measurement curve. We demonstrate that the transition from incoherent to coherent emission of a high- pulse-pump metallo-dielectric nanolaser can be determined by examining the width of a second-order intensity correlation peak that shrinks below and broadens above the threshold. Our photon fluctuation study, the first ever reported for this type of nanolaser, confirms the validity of this measurement technique. Additionally, we show that the width variation above the threshold results from the delayed threshold phenomenon, providing the first observation of dynamical hysteresis in a nanolaser.
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