In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the O₂ ratio from 16% to 33% in the argon–oxygen plasma treatment mixture. Hall measurement results showed that both the thin-film resistivity and carrier Hall mobility of the Ar–O₂ plasma–treated IGZO thin films increased with the reduction of the carrier concentration caused by the decrease in the oxygen vacancy density; this was also verified using X-ray photoelectron spectroscopy measurements. IGZO thin films treated with Ar–O₂ plasma were used as channel layers for fabricating DG TFT devices. These DG IGZO TFT devices were subjected to RTA at 100 °C–300 °C for improving the device characteristics; the field-effect mobility, subthreshold swing, and I_ON/I_OFF current ratio of the 33% O₂ plasma–treated DG TFT devices improved to 58.8 cm²/V·s, 0.12 V/decade, and 5.46 × 10⁸, respectively. Long-term device stability reliability tests of the DG IGZO TFTs revealed that the threshold voltage was highly stable.

To accurately detect minute amounts of substances without disturbing the surroundings of target molecules has been a major goal in bioanalytical technology. Here by integrating an optoelectronic terahertz (THz) microsource into a glass-substrated microchip within the near-field distance, we demonstrate a compact, label-free, noninvasive, and sensitive microbiosensing system with low-power consumption. The demonstrated THz microchip allows us to locally specify various illicit drug powders with weights of nanograms, with a promising future for rapid identification of the static status or even the dynamics of various biomolecules

: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10⁻⁴ Ω/cm), carrier concentration (4.1 × 10²¹ cm⁻³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10²¹ cm⁻³) with a high figure of merit (81.1 × 10⁻³ Ω⁻¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.