We generalize the dispersive theory of the Jaynes-Cummings model beyond the frequently employed rotating-wave approximation (RWA) in the coupling between the two-level system and the resonator. For a detuning sufficiently larger than the qubit-oscillator coupling, we diagonalize the non-RWA Hamiltonian and discuss the differences to the known RWA results. Our results extend the regime in which dispersive qubit readout is possible. If several qubits are coupled to one resonator, an effective qubit-qubit interaction of Ising type emerges, whereas RWA leads to isotropic interaction. This impacts on the entanglement characteristics of the qubits.
Using the parametrically driven harmonic oscillator as a working example, we study two different Markovian approaches to the quantum dynamics of a periodically driven system with dissipation. In the simpler approach, the driving enters the master equation for the reduced density operator only in the Hamiltonian term. An improved master equation is achieved by treating the entire driven system within the Floquet formalism and coupling it to the reservoir as a whole. The different ensuing evolution equations are compared in various representations, particularly as Fokker-Planck equations for the Wigner function. On all levels of approximation, these evolution equations retain the periodicity of the driving, so that their solutions have Floquet form and represent eigenfunctions of a nonunitary propagator over a single period of the driving. We discuss asymptotic states in the long-time limit as well as the conservative and the high-temperature limits. Numerical results obtained within the different Markov approximations are compared with the exact path-integral solution. The application of the improved Floquet-Markov scheme becomes increasingly important when considering stronger driving and lower temperatures.
We calculate the exact Landau-Zener transition probabilities for a qubit with an arbitrary linear coupling to a bath at zero temperature. The final quantum state exhibits a peculiar entanglement between the qubit and the bath. In the special case of diagonal coupling, the bath does not influence the transition probability, whatever the speed of the Landau-Zener sweep. It is proposed to use Landau-Zener transitions to determine both the reorganization energy and the integrated spectral density of the bath. Possible applications include circuit QED and molecular nanomagnets.
We study Landau-Zener transitions in a qubit coupled to a bath at zero temperature. A general formula that is applicable to models with a nondegenerate ground state is derived. We calculate exact transition probabilities for a qubit coupled to either a bosonic or a spin bath. The nature of the baths and the qubit-bath coupling is reflected in the transition probabilities. For diagonal coupling, when the bath causes energy fluctuations of the diabatic qubit states but no transitions between them, the transition probability coincides with the standard Landau-Zener probability of an isolated qubit. This result is universal as it does not depend on the specific type of bath. For pure off-diagonal coupling, by contrast, the tunneling probability is sensitive to the coupling strength. We discuss the relevance of our results for experiments on molecular nanomagnets, in circuit QED, and for the fast-pulse readout of superconducting phase qubits.
Electrons confined in Si quantum dots possess orbital, spin, and valley degrees of freedom (DOF). We perform Landau-Zener-Stückelberg-Majorana (LZSM) interferometry on a Si double quantum dot that is strongly coupled to a microwave cavity to probe the valley DOF. The resulting LZSM interference pattern is asymmetric as a function of level detuning and persists for drive periods that are much longer than typical charge decoherence times. By correlating the LZSM interference pattern with charge-noise measurements, we show that valley-orbit hybridization provides some protection from the deleterious effects of charge noise. Our work opens the possibility of harnessing the valley DOF to engineer charge-noise-insensitive qubits in Si.