This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition, they lead to percolative transport through paths of minimal energy in the two-dimensional (2D) landscape of disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schrödinger equation resolution. The theory also provides a good approximation to the density of states for the disordered system over the full range of energies required to account for transport at room temperature. The current-voltage characteristics modeled by three-dimensional simulation of a full nitride-based light emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high-quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.

Geometric arrays of vortices found in various systems owe their regular structure to mutual interactions within a confined system. In optics, such vortex crystals may form spontaneously within a resonator. Their crystallization is relevant in many areas of physics, although their usefulness is limited by the lack of control over their topology. On the other hand, programmable devices like spatial light modulators allow the design of nearly arbitrary vortex distributions but without any intrinsic evolution. By combining non-Hermitian optics with on-demand topological transformations enabled by metasurfaces, we report a solid-state laser that generates 10 × 10 vortex laser arrays with actively tunable topologies and non-local coupling dictated by the array’s topology. The vortex arrays exhibit sharp Bragg diffraction peaks, witnessing their coherence and topological charge purity, which we spatially resolve over the whole lattice by introducing a parallelized analysis technique. By structuring light at the source, we enable complex transformations that allow to arbitrarily partition orbital angular momentum within the cavity and to heal topological charge defects, thus realizing robust and versatile resonators for applications in topological optics.

Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased photocurrent spectroscopy is shown to be characteristic of the ternary alloy disorder. The broadening of the absorption edge observed for quantum wells emitting from violet to green (indium content ranging from 0% to 28%) corresponds to a typical Urbach energy of 20 meV. A three-dimensional absorption model is developed based on a recent theory of disorder-induced localization which provides the effective potential seen by the localized carriers without having to resort to the solution of the Schrödinger equation in a disordered potential. This model incorporating compositional disorder accounts well for the experimental broadening of the Urbach tail of the absorption edge. For energies below the Urbach tail of the InGaN quantum wells, type-II well-to-barrier transitions are observed and modeled. This contribution to the below-band-gap absorption is particularly efficient in near-ultraviolet emitting quantum wells. When reverse biasing the device, the well-to-barrier below-band-gap absorption exhibits a red-shift, while the Urbach tail corresponding to the absorption within the quantum wells is blue-shifted, due to the partial compensation of the internal piezoelectric fields by the external bias. The good agreement between the measured Urbach tail and its modeling by the localization theory demonstrates the applicability of the latter to compositional disorder effects in nitride semiconductors.

We present here a model of carrier distribution and transport in semiconductor alloys accounting for quantum localization effects in disordered materials. This model is based on the recent development of a mathematical theory of quantum localization which introduces for each type of carrier a spatial function called localization landscape. These landscapes allow us to predict the localization regions of electron and hole quantum states, their corresponding energies, and the local densities of states. We show how the various outputs of these landscapes can be directly implemented into a drift-diffusion model of carrier transport and into the calculation of absorption/emission transitions. This creates a new computational model which accounts for disorder localization effects while also capturing two major effects of quantum mechanics, namely, the reduction of barrier height (tunneling effect) and the raising of energy ground states (quantum confinement effect), without having to solve the Schrödinger equation. Finally, this model is applied to several one-dimensional structures such as single quantum wells, ordered and disordered superlattices, or multiquantum wells, where comparisons with exact Schrödinger calculations demonstrate the excellent accuracy of the approximation provided by the landscape theory.

Metasurfaces are arrays of subwavelength spaced nanostructures that can manipulate the amplitude, phase, and polarization of light to achieve a variety of optical functions beyond the capabilities of 3D bulk optics. However, they suffer from limited performance and efficiency when multiple functions with large deflection angles are required because the non-local interactions due to optical coupling between nanostructures are not fully considered. Here we introduce a method based on supercell metasurfaces to demonstrate multiple independent optical functions at arbitrary large deflection angles with high efficiency. In one implementation the incident laser is simultaneously diffracted into Gaussian, helical and Bessel beams over a large angular range. We then demonstrate a compact wavelength-tunable external cavity laser with arbitrary beam control capabilities – including beam shaping operations and the generation of freeform holograms. Our approach paves the way to novel methods to engineer the emission of optical sources.

Coupled clocks are a classic example of a synchronization system leading to periodic collective oscillations. Already in 1665, Christiaan Huygens described this phenomenon as a kind of “sympathy” among oscillators. In this work, we describe the formation of two types of laser frequency combs as a system of oscillators coupled through the beating of the lasing modes. We experimentally show two completely different types of synchronization in a quantum dot laser—in-phase and splay-phase states. Both states can be generated in the same device, just by varying the damping losses of the system. This modifies the coupling among the oscillators. The temporal laser output is characterized using both linear and quadratic autocorrelation techniques. Our results show that both pulses and frequency-modulated states can be generated on demand within the same device. These findings allow us to connect laser frequency combs produced by amplitude-modulated and frequency-modulated lasers and link these to pattern formation in coupled systems such as Josephson-junction arrays.