In developing terahertz (THz) technologies that are more suitable for industrial applications, we have focused on research on continuous-wave (CW) THz technologies to develop small, low-cost, and multifunctional THz devices and systems. In the course of this research, we have developed several key devices such as widely tunable compact beating sources in the form of dual-mode lasers, THz emitters, including nano-electrode-photomixers and unitraveling carrier photodiode photomixers, and highly sensitive THz detectors, such as Schottky barrier diodes. In this paper, along with our recently obtained results that demonstrate the enhanced performance of these devices, we also present an example of a practical industrial application of our CW THz system: a nondestructive evaluation (NDE) system. The system described can be applied in the car manufacturing factory as an NDE technique to find process errors. Although further improvements to photonics-based THz technologies are necessary, we believe that efforts in this field will begin an era of THz technologies as a widely used industrial technique.

Nondestructive THz imaging technology is a promising technology in several industrial applications such as process monitoring and quality control. To further popularize the application of this technique in the industry, we developed photonics-based devices such as a dual-mode laser, uni-travelling carrier photodiode, and Schottky-barrier diode that enable the realization of a compact, low-cost, multifunctional continuous wave (CW) THz system. To develop CW THz reflective imaging systems with these devices, a telecentric f-θ lens and novel two-dimensional (2D) beam scanner were developed. A high-speed, low-cost 2D reflector with a 4-sided polygon mirror, a brushless DC (BLDC) motor rotating at approximately 2,990 revolutions per minute (RPM) and a stepping motor was designed to ensure that a THz image sized 500 × 400 pixels could be scanned in approximately 2 s. However, it is difficult to maintain a constant speed in high-speed rotating BLDC motors. The measured maximum deviation is approximately 0.7%, which results in distorted images. To compensate for this distortion, a sync signal reflector was designed to monitor the real-time RPM of the BLDC motor. Using the novel 2D beam scanner and sync signal reflector, the distorted images could be corrected simply, enabling the development of a 2D THz reflective imaging system using a single emitter and detector; this system could exhibit a higher speed and was more cost effective than the existing system. Although further improvements to photonics-based THz technologies are necessary, we believe that these efforts will begin an era of THz technologies as a widely used industrial technique.

Optical intensity modulators (OIMs) are essential for mid-infrared (mid-IR) photonics, enabling applications such as bond-selective molecular sensing, and free-space communications via atmospheric windows. Integrated photonics offers a compact and cost-effective solution, yet on-chip mid-IR OIMs significantly underperform compared to their near-IR counterparts. Furthermore, despite the potential benefits for system reconfiguration in accessing various communication frequencies and molecular absorption bands, developing a single OIM capable of operating across a broad spectral range remains a challenge. In this study, we introduce an on-chip OIM that operates over a wide wavelength range in the mid-IR, implemented using a racetrack resonator structure in thin film lithium niobate (TFLN). The modulator employs a two-point coupling scheme, allowing active control of the coupling strength to maintain critical coupling and thereby ensuring high modulation extinction across a wide spectral region. This approach not only achieves high modulation performance but also relaxes the design constraints and fabrication precision typically associated with resonator-based modulators, as confirmed through an analytic model. Implemented in TFLN having a wide transmission spectrum and strong electro-optic coefficient, the OIM demonstrates a modulation extinction ratio exceeding 20 dB with an electro-optic efficiency of 7.7 V cm over the wavelength range of 3.3–3.8 μm, which falls within the first atmospheric transmission widow in the mid-IR. This approach can be adapted to other spectral regions, providing a versatile solution for diverse photonic applications.

Thin-film lithium niobate (TFLN) has emerged as a powerful platform for integrated nonlinear and quantum photonics, owing to its strong optical nonlinearities, wide transparency window, and electro- and piezo-optic properties. However, conventional traveling-wave resonators—such as micro-rings, disks, and racetracks—suffer from curvature-dependent group dispersion and losses, limited spectral tunability, and parasitic nonlinearities, which constrain their performance, scalability, and operational stability in nonlinear photonic circuits. Here, we present photonic crystal (PhC) Fabry–Pérot (FP) micro-resonators in TFLN that address these limitations. The device features a one-dimensional straight cavity bounded by PhC reflectors and supports well-confined standing-wave resonant modes within an engineered photonic bandgap. We achieve intrinsic quality (Q) factors of up to 1.4 × 106 and demonstrate that both the free spectral range (FSR) and coupling strength can be consistently controlled via cavity length and PhC coupler design, respectively. The photonic bandgap is tunable across the S-, C-, and L-bands without degradation of resonator performance. Spectral confinement of high-Q resonant modes is expected to mitigate parasitic nonlinearities, such as Raman scattering. These advances, together with the one-dimensional geometry, establish PhC FP micro-resonators as compact and scalable building blocks for high-density photonic integrated circuits targeting next-generation nonlinear and quantum applications.

We fabricated a nano-gap electrode large area THz emitter and measured the THz emission using a femtosecond laser based THz time-domain spectroscopy system. As a result of adopting the large-area emitter structure, the optical power density was significantly reduced at the active region, and the emission power was improved by 20 times.