Various configurations like p-n junctions, metal-semiconductor Schottky barriers, and metal-oxide-semiconductor structures have been widely used in position-sensitive detectors. In this report, we propose a PEDOT:PSS/n-Si heterojunction as a hybrid organic/inorganic configuration for position-sensitive detectors. The influence of the thickness of the PEDOT:PSS layer, the wavelength of incident light, and the intensity of illumination on the device performance are investigated. The hybrid PSD exhibits very high sensitivity (>100 mV/mm), excellent nonlinearity (0.995) with a response time of <4 ms to the inhomogeneous IR illumination. The presented hybrid configuration also benefits from a straightforward low-temperature fabrication process. These advantages of the PEDOT:PSS/n-Si heterojunction are very promising for developing a new class of position-sensitive detectors based on the hybrid organic/inorganic junctions.

Benefiting from a self-powering facility, this novel configuration has high sensitivity in both photocurrent (5000 nA mm⁻¹) and photovoltage (20 mV mm⁻¹) modes.

In order to fulfill fast electron transport and low recombination rate in dye-sensitized solar cells, we propose to utilize a micro-patterned anode based on TiO₂ nanoparticles. The micro-structures of the mesoporous TiO₂ films were patterned by Si molds (microimprint technique). A series of measurements including the time of flight, open circuit voltage decay, and charge extraction is carried out to investigate the electron transport in these structures. Our measurement confirms the fast electron transport and high electron lifetime in the micro-patterned structures, which is in agreement with the previously reported simulations. The results have shown that for columnar 20 × 20 μm² micro-structures, the electron diffusion coefficient is increased by 60% from 3.9 × 10⁻⁵ ${\text{cm}}^2/\mathrm{s}$ to 6.3 × 10⁻⁵$\hspace{0.17em}{\text{cm}}^2/\mathrm{s}$ . In addition, the electron lifetime has considerably (about one order of magnitude) increased in the cells based on TiO₂ micro-structures. These enhancements in the electron transport have significantly improved the power conversion efficiency of dye-sensitized solar cells, which is increased by 69% from 5.16% to 8.73%. The results are explained in terms of directional diffusion and extra trap states in the micro-structures of porous TiO₂ films.

We study the temperature and voltage dependence of current density in hybrid poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/$\mathrm{Si}$ heterojunctions. It is shown that charge transport follows distinct mechanisms at reverse and forward bias. The current is found to be injection limited at reverse bias owing to the quasi-Schottky-barrier at the organic-inorganic interface. At forward bias, the carrier transport is governed by space-charge-limited current in PEDOT:PSS. Trap-limited current at low forward bias is associated with trap states in the organic layer. The total density and the characteristic energy of localized states of PEDOT:PSS are estimated as $N_t\simeq 5.6\times {10}^{15}{\mathrm{cm}}^{-3}$ and $E_{\mathrm{ch}}\simeq 0.107\mathrm{eV}$, respectively. The commonly observed double-logarithmic character at forward bias is interpreted as the signature of transition from the Mark-Helfrich regime to the Mott-Gurney regime.