A square piezoelectric composite diaphragm was analyzed by the finite element method to enhance the sensitivity of a piezoelectric micromachined ultrasound transducer (pMUT). The structures of electrode and piezoelectric film were optimized and a centric electrode was designed to avoid the counteraction of stress in the centre and edges. In order to further improve the sensitivity; a pMUT with partially-etched piezoelectric film was adopted. The receive and transmit sensitivities of the pMUT were analyzed in details. The receive sensitivity of pMUT with partially-etched ZnO film is 3.3 dB or 6.8 dB higher than those with a centric and whole electrode, respectively; and the amplitude of a partially-etched ZnO film pMUT under a certain voltage is 5.5 dB and 30 dB higher than those with centric and whole electrode separately. Two pMUT-based ZnO films were fabricated by micromachining technology and their receive and transmit sensitivities were tested. The ZnO films deposited by direct current (DC) magnetron sputtering exhibit a densely packed structure with columnar crystallites. The test results show that the structure of the square diaphragm with partially-etched piezoelectric layer can significantly improve the transducer sensitivity. The receive sensitivity and transmit sensitivity are −238.35 dB (ref. 1 V/μPa) and 150.42 dB (ref. 1 μPa/V); respectively.

Residual stress is an important factor affecting the sensitivity of piezoelectric micromachined microphone. A symmetric composite vibrating diaphragm was adopted in the micro electro mechanical systems piezoelectric microphone to decrease the residual stress and improve the sensitivity of microphone in this paper. The ZnO film was selected as piezoelectric materials of microphone for its higher piezoelectric coefficient d ₃₁ and lower relative dielectric constant. The thickness optimization of piezoelectric film on square diaphragm is difficult to be fulfilled by analytic method. To optimize the thickness of ZnO films, the stress distribution in ZnO film was analyzed by finite element method and the average stress in different thickness of ZnO films was given. The ZnO films deposited using dc magnetron sputtering exhibits a densely packed structure with columnar crystallites preferentially oriented along (002) plane. The diaphragm of microphone fabricated by micromachining techniques is flat and no wrinkling at corners, and the sensitivity of microphone is higher than 1 mV Pa ⁻¹ . These results indicate the diaphragm has lower residual stress.

In this contribution, a new surface acoustic wave (SAW)-based sensor was proposed for sensing hydrogen sulfide (H₂S) at room temperature (30 °C), which was composed of a phase discrimination circuit, a SAW-sensing device patterned with delay line, and a triethanolamine (TEA) coating along the SAW propagation path of the sensing device. The TEA was chosen as the sensitive interface for H₂S sensing, owing to the high adsorption efficiency by van der Waals’ interactions and hydrogen bonds with H₂S molecules at room temperature. The adsorption in TEA towards H₂S modulates the SAW propagation, and the change in the corresponding phase was converted into voltage signal proportional to H₂S concentration was collected as the sensor signal. A SAW delay line patterned on Y-cut quartz substrate with Al metallization was developed photographically, and lower insertion and excellent temperature stability were achieved thanks to the single-phase unidirectional transducers (SPUDTs) and lower cross-sensitivity of the piezoelectric substrate. The synthesized TEA by the reaction of ethylene oxide and ammonia was dropped into the SAW propagation path of the developed SAW device to build the H₂S sensor. The developed SAW sensor was characterized by being collecting into the phase discrimination circuit. The gas experimental results appear that fast response (7 s at 4 ppm H₂S), high sensitivity (0.152 mV/ppm) and lower detection limit (0.15 ppm) were achieved at room temperature. It means the proposed SAW sensor will be promising for H₂S sensing.

We proposed a PZT-film-based piezoelectric micromachined ultrasonic transducer (pMUT) with an I-shaped composite diaphragm to improve the sensitivity and resonant frequency of pMUTs with the same diaphragm area. The finite element method (FEM) simulation results indicated that the pMUT with an I-shaped composite diaphragm had relatively high sensitivity and resonant frequency. The pMUT with an I-shaped diaphragm had a 36.07% higher resonant frequency than a pMUT with a circular diaphragm. The pMUT with an I-shaped diaphragm had a 3.65 dB higher loop gain (loss) than a pMUT with a rectangular diaphragm. The piezoelectric layer thickness of the pMUT with an I-shaped composite diaphragm was then optimized. Maximum loop gain (loss) was reached when the piezoelectric layer thickness was 8 μm. The pMUT with an I-shaped composite diaphragm was fabricated using the MEMS method, and its performance was evaluated.

In this study, Pb(Zr0.54Ti0.46)O3 films were prepared by the sol-gel method with Sm doping concentrations of 0, 0.5, 1, 1.5, 2, and 3 mol. %. Their surface morphology, density, crystal structure, piezoelectric, dielectric, and ferroelectric properties were characterized. The results indicated that, unlike Sm-doped lead zirconate titanate (PZT) ceramics, all Sm-PZT films exhibit a significant increase in the grain size compared to undoped PZT films. Moreover, Sm doping affected their crystal orientation and significantly enhanced their piezoelectric coefficient d33 and remnant polarization (Pr). Notably, the Sm-PZT film with a doping concentration of 1.5 mol. % exhibited optimal (100) orientation, achieving a high piezoelectric coefficient d33 of 279.87 pm/V, 4.55 times that of the non-doped PZT films.