Unmanned aerial vehicles (UAVs) equipped with thermal infrared (TIR) cameras play a crucial role in combating nocturnal wildlife poaching. However, TIR images often face challenges such as jitter, and wildlife overlap, necessitating UAVs to possess the capability to identify blurred and overlapping small targets. Current traditional lightweight networks deployed on UAVs struggle to extract features from blurry small targets. To address this issue, we developed ALSS-YOLO, an efficient and lightweight detector optimized for TIR aerial images. Firstly, we propose a novel Adaptive Lightweight Channel Split and Shuffling (ALSS) module. This module employs an adaptive channel split strategy to optimize feature extraction and integrates a channel shuffling mechanism to enhance information exchange between channels. This improves the extraction of blurry features, crucial for handling jitter-induced blur and overlapping targets. Secondly, we developed a Lightweight Coordinate Attention (LCA) module that employs adaptive pooling and grouped convolution to integrate feature information across dimensions. This module ensures lightweight operation while maintaining high detection precision and robustness against jitter and target overlap. Additionally, we developed a single-channel focus module to aggregate the width and height information of each channel into four-dimensional channel fusion, which improves the feature representation efficiency of infrared images. Finally, we modify the localization loss function to emphasize the loss value associated with small objects to improve localization accuracy. Extensive experiments on the BIRDSAI and ISOD TIR UAV wildlife datasets show that ALSS-YOLO achieves state-of-the-art performance, Our code is openly available at https://github.com/helloworlder8/computer_vision .

Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO₂/Al-ZnO/HfO₂) tri-layer structure device was prepared using the sol–gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO₂ layers. The device had excellent RS properties, such as an excellent switch ratio of 10⁴, retention of 10⁴ s, and multi-level storage capability of six resistance states (one low-resistance state and five high-resistance states) and four resistance states (three low-resistance states and one high-resistance state) which were obtained by controlling stop voltage and compliance current, respectively. Mechanism analysis revealed that the device is dominated by ohmic conduction and space-charge-limited current (SCLC). We believe that the oxygen-rich vacancy concentration of the Al-ZnO insertion layer can improve the formation and rupture behaviors of conductive filaments, thereby enhancing the resistive switching (RS) performance of the device.

The spin–orbit torques (SOTs) in the heavy metal (HM)/ferromagnetic metal (FM) structure hold promise for next-generation low-power and high-density spintronic memory and logic applications. For the SOT switching of a perpendicular magnetization, an external magnetic field is inevitable for breaking the mirror symmetry, which is not practical for high-density nanoelectronics applications. In this work, we study the current-induced field-free SOT switching and SOT perpendicular effective field ($H_z^{eff}$) in a variety of laterally asymmetric multilayers, where the asymmetry is introduced by growing the FM layer in a wedge shape. We show that the design of structural asymmetry by wedging the FM layer is a universal scheme for realizing field-free SOT switching. Moreover, by comparing the FM layer thickness dependence of ($H_z^{eff}$) in different samples, we show that the efficiency (β =$H_z^{eff}$/J, J is the current density) is sensitive to the HM/FM interface and the FM layer thickness. The sign of β for thin FM thicknesses is related to the spin Hall angle (θ_SH) of the HM layer attached to the FM layer. β changes its sign with the thickness of the FM layer increasing, which may be caused by the thickness dependence of the work function of FM. These results show the possibility of engineering the deterministic field-free switching by combining the symmetry breaking and the materials design of the HM/FM interface.