Prof. Deok-kee Kim received a B.S. degree in materials science and engineering from Seoul National University in 1993, and a Ph.D. degree in materials science and engineering from Stanford University in 2001. He was with IBM microelectronics, NY, USA from 2000 to 2007, where he was involved in eDRAM integration and silicide eFUSE. He was with Samsung Electronics from 2007 to 2011, where he researched metallic eFUSE, 3-D ReRAM, and silicon solar cells for mobile applications. Since 2011, he has been a Professor with the Electrical Engineering Department, Sejong University, Seoul, South Korea. His research interests include the atomic switch for power application, reliability, and characterization of oxide-based semiconductor devices, transparent electrodes for OSC, characterization of InGaAs-based devices and nanoscale material property, and stress and device performance interactions.