The speed of silicon-based transistors has reached an impasse in the recent decade, primarily due to scaling techniques and the short-channel effect. Conversely, graphene (a revolutionary new material possessing an atomic thickness) has been shown to exhibit a promising value for electrical conductivity. Graphene would thus appear to alleviate some of the drawbacks associated with silicon-based transistors. It is for this reason why such a material is considered one of the most prominent candidates to replace silicon within nano-scale transistors. The major crux here, is that graphene is intrinsically gapless, and yet, transistors require a band-gap pertaining to a well-defined ON/OFF logical state. Therefore, exactly as to how one would create this band-gap in graphene allotropes is an intensive area of growing research. Existing methods include nanoribbons, bilayer and multi-layer structures, carbon nanotubes, as well as the usage of the graphene substrates. Graphene transistors can generally be classified according to two working principles. The first is that a single graphene layer, nanoribbon or carbon nanotube can act as a transistor channel, with current being transported along the horizontal axis. The second mechanism is regarded as tunnelling, whether this be band-to-band on a single graphene layer, or vertically between adjacent graphene layers. The high-frequency graphene amplifier is another talking point in recent research, since it does not require a clear ON/OFF state, as with logical electronics. This paper reviews both the physical properties and manufacturing methodologies of graphene, as well as graphene-based electronic devices, transistors, and high-frequency amplifiers from past to present studies. Finally, we provide possible perspectives with regards to future developments.

We investigate the effects of a linear resonator on the high-frequency dynamics of electrons in devices exhibiting negative differential conductance. We show that the resonator strongly affects both the dc and ac transport characteristics of the device, inducing quasiperiodic and high-frequency chaotic current oscillations. The theoretical findings are confirmed by experimental measurements of a $\mathrm{GaAs}/\mathrm{AlAs}$ miniband semiconductor superlattice coupled to a linear microstrip resonator. Our results are applicable to other active solid state devices and provide a generic approach for developing modern chaos-based high-frequency technologies including broadband chaotic wireless communication and superfast random-number generation.

Palladium nanoparticles (Pd NPs) have attracted considerable attention recently for their excellent catalytic properties in various catalysis reactions. However, Pd NPs have some drawbacks, including their high cost, susceptibility to deactivation, and the possibility of poisoning by intermediate products. Herein, Pd nanoparticles with an average diameter of 6.5 nm were successfully incorporated on electronically transparent 2D MXene (Ti₃C₂Ti_x) nanosheets (Pd-MXene) by microwave irradiation. Considering the synergetic effects of ultra-fine Pd NPs, together with the intrinsic properties of 2D MXene, the obtained Pd-MXene showed a specific surface area of 97.5 m²g⁻¹ and multiple pore channels that enabled excellent electrocatalytic activity for the reduction of CO₂. Further, the 2D Pd-MXene hybrid nanocatalyst enables selective electroreduction of CO₂ into selective production of CH₃OH in ambient conditions by multiple electron transfer. A detailed explanation of the CO₂RR mechanism is presented, and the faradic efficiency (FE) of CH₃OH is tuned by varying the cell potential. Recyclability studies were conducted to demonstrate the practical application of CO₂ reduction into selective production of CH₃OH. In this study, metal and MXene interfaces were created to achieve a highly selective electroreduction of CO₂ into fuels and other value-added chemical products.

We peruse various anomalous physical responses of the cubic (ferromagnetic ${\mathrm{SrRuO}}_3$ and paramagnetic ${\mathrm{CaRuO}}_3$) ruthenates, such as fractional power-law conductivity, anomalous Raman line shapes, and Hall currents. We show how these exciting power-law observations are naturally described within a new, local (orbital) non-Fermi-liquid state arising from strong, multiorbital Coulomb interactions. Introducing a multiorbital, correlated model treated within the dynamical mean-field theory, we also find two distinct relaxation rates for relaxation of transport in complete agreement with experiment.

Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of $R(x,H)$ are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides ${\mathrm{Ag}}_{2+\delta }\mathrm{Se}$. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures.