Simultaneously achieving higher carriers concentration and mobility is a technical challenge against up-scaling the transparent-conductive performances of transparent-conductive oxides. Utilizing one order higher dense (∼1 × 10¹¹ cm⁻³) plasmas (in comparison to the conventional direct current plasmas), highly c-axis oriented Al-doped ZnO films have been prepared with precise control over relative composition and chemical states of constituting elements. Tailoring of intrinsic (O vacancies) and extrinsic (ionic Al and zero-valent Al) dopants provide simultaneous enhancement in mobility and concentration of charge carriers. Room-temperature resistivity as low as 4.89 × 10⁻⁴ Ω cm along the carrier concentration 5.6 × 10²⁰ cm⁻³ is obtained in 200 nm thick transparent films. Here, the control of atomic Al reduces the charge trapping at grain boundaries and subdues the effects of grain boundary scattering. A mechanism based on the correlation between electron-hole interaction and carrier mobility is proposed for degenerately doped wide band-gap semiconductors.

The interdependence of ‘size’ and ‘volume-fraction’ hinders the identification of their individual role in the interface properties of metal nanoparticles (NPs) embedded in a matrix. Here, the case of Cu NPs embedded in a C matrix is presented for their profound antibacterial activity. Cu:C nanocomposite thin films with fixed Cu content (≈12 atomic%) are prepared using a plasma process where plasma energy controls the size of Cu NPs (from 9 nm to 16 nm). An inverse relationship between the size-effect on antibacterial activity against Escherichia coli and Staphylococcus aureus bacteria is established through the real time monitoring of an aliquot by inductively coupled plasma mass spectrometry, which confirmed the inverse relationship of Cu ion release from the nanocomposite with varied Cu NP sizes. It was found that enhancing the total power density increases the plasma density as well as effective kinetic energy of the plasma species, which in turn creates a large number of nucleation sites and restricts the island kind of growth of Cu NPs. The mechanism of NP size-control is illustrated on the basis of ion density and nucleation and the growth regime of plasma species. This physical approach to NP size reduction anticipates a contamination-free competitive recipe of size-control to capping based chemical methods.