Federico Paolucci

Dr. Federico Paolucci

NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa (Italy)
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Research Focus & Metrics

Academic Career Length

15Years (2012-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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5 October 2016 in Nano Letters
Verified
Journal Article
Closed access
NCNathan Chejanovsky
Nathan Chejanovsky
MRMohammad Rezai
Mohammad Rezai
Federico PaolucciFederico Paolucci
Federico Paolucci
YKYoungwook Kim
Youngwook Kim
TRTorsten Rendler
Torsten Rendler
JWJörg Wrachtrup
Jörg Wrachtrup

5 June 2017 in Nature Nanotechnology
Verified
Journal Article
Closed access
MKMatthias Kühne
Matthias Kühne
Federico PaolucciFederico Paolucci
Federico Paolucci
JPJelena Popovic-Neuber
Jelena Popovic-Neuber
POPavel M. Ostrovsky
Pavel M. Ostrovsky
JMJoachim Maier
Joachim Maier
JSJurgen H. Smet
Jurgen H. Smet

2 July 2018 in Nature Nanotechnology
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Journal Article
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GSGiorgio De Simoni
Giorgio De Simoni
Federico PaolucciFederico Paolucci
Federico Paolucci
PSPaolo Solinas
Paolo Solinas
ESElia Strambini
Elia Strambini
FGFrancesco Giazotto
Francesco Giazotto

10 February 2012 in Physical Review Letters
Verified
Journal Article
Closed access
DDDario Daghero
Dario Daghero
Federico PaolucciFederico Paolucci
Federico Paolucci
ASAlessandro Sola
Alessandro Sola
MTMAURO TORTELLO
MAURO TORTELLO
Giovanni UmmarinoGiovanni Ummarino
Giovanni Ummarino
Claudio GerbaldiClaudio Gerbaldi
Claudio Gerbaldi
By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n2D as high as 3.5\ifmmode\times\else\texttimes\fi{}1015\,\,e/cm2 in gold films and to observe large relative variations in the film resistance, $\Delta${}R/R$'${}, up to 10% at low temperature. $\Delta${}R/R$'${} is a linear function of n2D\char22{}as expected within a free-electron model\char22{}if the film is thick enough ($\ge${}25\,\,nm); otherwise, a tendency to saturation due to size effects is observed. The application of this technique to 2D materials might allow extending the field-effect experiments to a range of charge doping where large conductance modulations and, in some cases, even the occurrence of superconductivity are expected.

25 February 2019 in Physical Review Applied
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Journal Article
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Federico PaolucciFederico Paolucci
Federico Paolucci
GSGiorgio De Simoni
Giorgio De Simoni
PSPaolo Solinas
Paolo Solinas
ESElia Strambini
Elia Strambini
NLNadia Ligato
Nadia Ligato
FGFrancesco Giazotto
Francesco Giazotto
In the last 60 years conventional solid and electrolyte gating has allowed sizable modulations of the surface carrier concentration in metallic superconductors, resulting in tuning of their conductivity and change of their critical temperature. Recent conventional gating experiments on superconducting metal nanostructures showed full suppression of the critical current without variation of the normal-state resistance and the critical temperature. These results still lack a microscopic explanation. In this article, we describe a complete set of gating experiments on Ti-based superconducting Dayem-bridges and a proposed classical thermodynamic model that seems to account for several of our experimental findings. In particular, zero-bias resistance and critical-current IC measurements highlight the following: the suppression of IC with both polarities of gate voltage, the surface nature of the effect, the independence of critical temperature from the electric field, and the gate-induced growth of a subgap dissipative component. In addition, the temperature dependence of the Josephson critical current seems to show a transition from ballistic Kulik-Omelyanchuk behavior to Ambegaokar-Baratoff tunnellike behavior on increase of the electric field. Furthermore, the IC suppression persists in the presence of sizable perpendicular-to-plane magnetic fields. We propose a classical thermodynamic model able to describe some of the experimental observations of the present and previous work. Above all, the model grabs the bipolar-electric-field-induced suppression of IC and the emergence of a subgap dissipative component near full suppression of the supercurrent. Finally, applications using the effect discussed are proposed.

12 June 2018 in Nano Letters
Verified
Journal Article
Closed access
Federico PaolucciFederico Paolucci
Federico Paolucci
GSGiorgio De Simoni
Giorgio De Simoni
ESElia Strambini
Elia Strambini
PSPaolo Solinas
Paolo Solinas
FGFrancesco Giazotto
Francesco Giazotto